RLT808 Search Results

Laser-Diode 808

Abstract: laserdiode Laser-Diode RLT808150GO
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT808150GO TECHNICAL DATA High Power Infrared Laserdiode Emitting Dimensions: 100 x 1 µm Lasing wavelength: 808 nm typ.

RLT808100GM

Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT808100GM TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs/GaAs quantum well, aperture 15 x 1.5 µm

laserdiode application

Abstract: RLT8081000G Laser-Diode 808 CW laser diode 808 nm
Contextual Info: 990702 ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT8081000G TECHNICAL DATA High Power Infrared Laserdiode Structure:High Efficiency MOVCD Quantum Well Design

Contextual Info: RLT80830MG Bankverbindung: Bank~Austria Creditanstalt AG - Bankleitzahl: 12000 - EURO Kontonummer: 608 547 402 - USD Kontonummer: 570 347 781 EUR Konto IBAN: AT1212 00000 608 547 402 - SWIFT: BKAUATWW USD Konto IBAN: AT3112 00000 570 347 781 - SWIFT: BKAUATWW

RLT80810MG

Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT80810MG TECHNICAL DATA Infrared Laserdiode NOTE! Structure: GaAlAs double heterostructure

RLT808500GO

Abstract: 808 nm 100 mw Laser-Diode 808
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT808500GO TECHNICAL DATA High Power Infrared Laserdiode Emitting Dimensions: 100 x 1 µm Lasing wavelength: 808 nm typ.

RLT80805MGS

Contextual Info: Laser Diode Technical Data RLT80805MGS ABSOLUTE MAXIMUM RATINGS Tc=25 oC DESCRIPTION SYMBOL RATED VALUE Optical Power (mW) Po 5 Operation Temperature (oC) Top -10 to +50 Storage Temperature (oC) Tstg -40 to +85 LD Reverse Voltage (V) VLDR 2 PD Reverse Voltage (V)

RLT808_10MG

Contextual Info: RLT808-10MG ABSOLUTE MAXIMUM RATINGS Tc=25 oC DESCRIPTION SYMBOL RATED VALUE Optical Power (mW) Po 10 Operation Temperature (oC) Top -10 to +50 Storage Temperature (oC) Tstg -40 to +85 LD Reverse Voltage (V) VLDR 2 PD Reverse Voltage (V) VPDR 30 Features

RLT808M-1.5WFC

Contextual Info: RLT808M-1.5WFC TECHNICAL DATA Multi-Mode 14-Pin Butterfly Laser Diode Features • • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 808 nm Optical Ouput Power: 1500 mW Package: 14-Pin Butterfly, Thermistor, TEC Fiber: 100µm core diameter

CW laser diode 808 nm

Contextual Info: 990702 ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT8081000GLI TECHNICAL DATA High Power Infrared Laserdiode Structure: High Efficiency MOVCD Quantum Well Design

Contextual Info: ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 office@roithner-laser.com www.roithner-laser.com RLT80810GS TECHNICAL DATA Infrared Laserdiode Structure: AlGaAs/GaAs Lasing wavelength: 808 nm typ., singlemode

laserdiode

Abstract: Laser-Diode 808 RLT808500G
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT808500G TECHNICAL DATA High Power Infrared Laserdiode Emitting Dimensions: 50 x 1 µm Lasing wavelength: 808 nm typ., AlGaAs

808 nm 100 mw

Abstract: RLT80850G
Contextual Info: ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT80850G TECHNICAL DATA High Power Infrared Laserdiode Structure: GaAlAs double heterostructure

Laser Diode 808 2 pin 1000 mw

Abstract: 808 nm 1000 mw RLT808100GS 808 nm 1000 mw laser diode
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT808100GS TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs/GaAs quantum well, aperture 3 x 1 µm

RLT808500G

Contextual Info: RLT808500G TECHNICAL DATA High Power Infrared Laserdiode Structure: High Efficiency MOVCD Quantum Well Design Lasing wavelength: 808 nm typ. NOTE! Output power: 500 mW, cw LASERDIODE Package: 9 mm MUST BE COOLED! PIN CONNECTION: 1 Laser diode cathode 2) Laser diode anode and photodiode cathode

RLT80805MG

Abstract: Laser-Diode 808
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT80805MG TECHNICAL DATA Infrared Laserdiode NOTE! Structure: GaAlAs double heterostructure

RLT808500GLI

Abstract: roithner Laser 500 mW 12 pin
Contextual Info: 990701 ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT808500GLI TECHNICAL DATA High Power Infrared Laserdiode Structure: High Efficiency MOVCD Quantum Well Design

RLT80830G

Abstract: 808 nm 100 mw
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT80830G TECHNICAL DATA High Power Infrared Laserdiode Structure: GaAlAs double heterostructure

Laser-Diode 808

Abstract: RLT80810G 808 nm 300 mW LD
Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT80810G TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs/GaAs Lasing wavelength: 808 +/- 3 nm typ., singlemode

RLT808M-3WFC

Contextual Info: RLT808M-3WFC TECHNICAL DATA Multi-Mode 14-Pin Butterfly Laser Diode Features • • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 808 nm Optical Ouput Power: 3000 mW Package: 14-Pin Butterfly, Thermistor, TEC Fiber: 100µm core diameter

RLT808-150GS

Abstract: CW laser diode 808 nm 150gs
Contextual Info: ROITHNER LASERTECHNIK SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 office@roithner-laser.com www.roithner-laser.com RLT808-150GS TECHNICAL DATA High Power Infrared Laser Diode NOTE! Lasing mode structure: single mode

RLT80820G

Contextual Info: ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT80820G TECHNICAL DATA High Power Infrared Laserdiode Structure: GaAlAs double heterostructure

smd diode UJ 64 A

Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Contextual Info: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.