RL 4A Search Results

LT1206

Abstract: 74c904 semiconductor 74c904 what is similar 74c906 74C906 LT1206C LT1206CN8 LT1206CR LT1206CS8 LT1206CY
Contextual Info: LT1206 250mA/60MHz Current Feedback Amplifier U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ 250mA Minimum Output Drive Current 60MHz Bandwidth, AV = 2, RL = 100Ω 900V/µs Slew Rate, AV = 2, RL = 50Ω 0.02% Differential Gain, AV = 2, RL = 30Ω

tcnl 100

Contextual Info: / T _ LT1210 u TECHNOLOGY r m 1.1 A, 35M Hz C u rre n t F e e d b a c k A m p lifie r F€OTUR€S DCSCRIPTIOn • 1.1A Minimum Output Drive Current ■ 35MHz Bandwidth, Ay = 2, RL = 10Q ■ 900V/,us Slew Rate, Ay = 2, RL = 10i2 The LT 1210 is a current feedback amplifier with high

FM20

Abstract: FN812 2000IB
Contextual Info: Power Transistor FN812 ICBO IEBO VCEO hFE VCE sat (Ta=25ºC) Unit µA µA V Ratings 10max 10max 100min 70min 0.3max External Dimensions FM20 (full-mold) 10.0 V a b Typical Switching Characteristics VCC (V) 12 RL (Ω) 4 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5

TDA7264

Abstract: LAYOUT Multiwatt TDA7264A R1061 BC107 hi-fi, stereo amplifier circuit, 5 in 1
Contextual Info: TDA7264 TDA7264A 25 + 25W STEREO AMPLIFIER WITH MUTE/ST-BY WIDE SUPPLY VOLTAGE RANGE UP TO 50V ABS MAX. SPLIT SUPPLY HIGH OUTPUT POWER: 25 + 25W @ THD =10%, RL = 8Ω, VS = +20V NO POP AT TURN-ON/OFF MUTE (POP FREE) STAND-BY FEATURE (LOW IQ) FEW EXTERNAL COMPONENTS

lw066a

Abstract: A115-A C101 SN54LV4066A SN74LV4066A SN74LV4066AN
Contextual Info: SN54LV4066A, SN74LV4066A QUADRUPLE BILATERAL ANALOG SWITCHES SCLS427F – APRIL 1999 – REVISED SEPTEMBER 2002 1A 1B 2B 2A 2C 3C GND 1 14 2 13 3 12 4 11 5 10 6 9 7 8 VCC 1C 4C 4A 4B 3B 3A description/ordering information This quadruple silicon-gate CMOS analog switch

Contextual Info: SN54LV4066A, SN74LV4066A QUADRUPLE BILATERAL ANALOG SWITCHES SCLS427I − APRIL 1999 − REVISED APRIL 2005 1A 1B 2B 2A 2C 3C GND 1 14 2 13 3 12 4 11 5 10 6 9 7 8 VCC 1C 4C 4A 4B 3B 3A SN74LV4066A . . . RGY PACKAGE TOP VIEW description/ordering information

Contextual Info: SN54LV4066A, SN74LV4066A QUADRUPLE BILATERAL ANALOG SWITCHES SCLS427I − APRIL 1999 − REVISED APRIL 2005 1A 1B 2B 2A 2C 3C GND 1 14 2 13 3 12 4 11 5 10 6 9 7 8 VCC 1C 4C 4A 4B 3B 3A SN74LV4066A . . . RGY PACKAGE TOP VIEW description/ordering information

Contextual Info: SN54LV4066A, SN74LV4066A QUADRUPLE BILATERAL ANALOG SWITCHES SCLS427I − APRIL 1999 − REVISED APRIL 2005 1A 1B 2B 2A 2C 3C GND 1 14 2 13 3 12 4 11 5 10 6 9 7 8 VCC 1C 4C 4A 4B 3B 3A SN74LV4066A . . . RGY PACKAGE TOP VIEW description/ordering information

Contextual Info: TS\ ì?4 High-Performance CMOS Two-Channel 5PST Switch Semiconductor , I nc . q s 4a h o q FEATURES GENERAL DESCRIPTION • Low on-resistance: rDS on = 5i2 • Wide bandwidth: 1,8GHz (-3dB point) • Crosstalk: -1 OOdB @ 50KHz, -7 0 d B @ 5MHz, -5 5 d B @ 30MHz

Contextual Info: SN74AUC02 QUADRUPLE 2-INPUT POSITIVE-NOR GATE www.ti.com SCES511A – NOVEMBER 2003 – REVISED MARCH 2005 FEATURES • VCC 1 14 2 13 4Y 3 12 4B 4 11 4A 5 6 10 3Y 9 3B 7 8 3A • • • • • 1A 1B 2Y 2A 2B 1Y • RGY PACKAGE TOP VIEW Optimized for 1.8-V Operation and Is 3.6-V I/O

Contextual Info: SN74AUC02 QUADRUPLE 2-INPUT POSITIVE-NOR GATE www.ti.com SCES511A – NOVEMBER 2003 – REVISED MARCH 2005 FEATURES • VCC 1 14 2 13 4Y 3 12 4B 4 11 4A 5 6 10 3Y 9 3B 7 8 3A • • • • • 1A 1B 2Y 2A 2B 1Y • RGY PACKAGE TOP VIEW Optimized for 1.8-V Operation and Is 3.6-V I/O

NTE5629

Contextual Info: NTE5629 TRIAC – 400VRM, 4Amp Description: The NTE5629 TRIAC is a bi–directional triode thyristor in a TO202 type case. This device may be switched from off–state to conduction for either polarity of applied voltage with positive or negative gate–trigger current. The NTE5629 can be driven directly with IC and MOS devices and is designed

A115-A

Abstract: C101 SN74AUC02
Contextual Info: SN74AUC02 QUADRUPLE 2-INPUT POSITIVE-NOR GATE www.ti.com SCES511A – NOVEMBER 2003 – REVISED MARCH 2005 FEATURES • VCC 1 14 2 13 4Y 3 12 4B 4 11 4A 5 6 10 3Y 9 3B 7 8 3A • • • • • 1A 1B 2Y 2A 2B 1Y • RGY PACKAGE TOP VIEW Optimized for 1.8-V Operation and Is 3.6-V I/O

Contextual Info: GD54/74LS125A QUADRUPLE BUS BUFFER GATES W ITH 3-STATE OUTPUTS Description This device contains 4 buffers with 3-state out­ puts and is provided with an output control input C which is independent for each buffer. Pin Configuration Vcc 4C 4A 4Y 3C 3A 3Y 14

UC3845A

Abstract: UC3842A ct 60 transistor uc2842a UC3843A datasheet UC2842AD1 UC2843AD1 UC3843A UC3844A
Contextual Info: UC2842A/3A/4A/5A UC3842A/3A/4A/5A HIGH PERFORMANCE CURRENT MODE PWM CONTROLLER . . . . . . TRIMMED OSCILLATOR DISCHARGE CURRENT CURRENT MODE OPERATION TO 500kHz AUTOMATIC FEED FORWARD COMPENSATION LATCHING PWM FOR CYCLE-BY-CYCLE CURRENT LIMITING INTERNALLY TRIMMED REFERENCE WITH

differences uc3842a uc3842b

Abstract: uc3843a a uc3843b differences uc3844a uc3844b uc3842a uc3842b NE555 PWM 500khz uc3842b equivalent UC3842B transformer less power supply 12 volt 3A UC3845A uc2842a
Contextual Info: UC2842A/3A/4A/5A UC3842A/3A/4A/5A HIGH PERFORMANCE CURRENT MODE PWM CONTROLLER . . . . . . TRIMMED OSCILLATOR DISCHARGE CURRENT CURRENT MODE OPERATION TO 500kHz AUTOMATIC FEED FORWARD COMPENSATION LATCHING PWM FOR CYCLE-BY-CYCLE CURRENT LIMITING INTERNALLY TRIMMED REFERENCE WITH

2SJ172

Abstract: 2SK970 4AM16
Contextual Info: 4AM16 Silicon N Channel/P Channel Power MOS FET Array Application SP–12 High speed power switching Features 1 • Low on–resistance N Channel : RDS on ≤ 0.17Ω, VGS = 10V , ID = 4A P Channel : RDS(on) ≤ 0.2Ω, VGS = -10V , ID = -4A • High speed switching

Contextual Info: DB4J310K Silicon epitaxial planar type For high speed switching circuits Unit: mm • Features  Short reverse recovery time trr  Low forward voltage VF  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: 4A

marking code DH

Contextual Info: New Product Si5905BDC Vishay Siliconix Dual P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.080 at VGS = - 4.5 V - 4a 0.117 at VGS = - 2.5 V - 4a 0.170 at VGS = - 1.8 V - 3.5 Qg (Typ) 4 nC • TrenchFET Power MOSFETs

Contextual Info: SN54LVC32A, SN74LVC32A QUADRUPLE 2-INPUT POSITIVE-OR GATES SCAS286N – JANUARY 1993 – REVISED JULY 2003 14 2 13 3 12 4 11 5 10 6 9 7 8 VCC 4B 4A 4Y 3B 3A 3Y 1B 1Y 2A 2B 2Y 14 1B 1A NC VCC 4B 1 13 4B 2 3 12 4A 4 11 4Y 10 3B 9 3A 5 6 7 8 SN54LVC32A . . . FK PACKAGE

A115-A

Abstract: C101 SN74AUC14
Contextual Info: SN74AUC14 www.ti.com SCES473A – AUGUST 2003 – REVISED MAY 2010 HEX SCHMITT-TRIGGER INVERTER Check for Samples: SN74AUC14 FEATURES 1 • VCC 1 14 2 13 6A 3 4 12 6Y 5 6 10 5Y 11 5A 9 4A 7 8 4Y • • • • • 1Y 2A 2Y 3A 3Y 1A • RGY PACKAGE TOP VIEW

LC157A

Abstract: SNJ54LVC157AJ A115-A C101 LVC157A SN54LVC157A SN74LVC157A
Contextual Info: SN54LVC157A, SN74LVC157A QUADRUPLE 2-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS SCAS292N – JANUARY 1993 – REVISED MAY 2003 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 VCC G 4A 4B 4Y 3A 3B 3Y 1A 1B 1Y 2A 2B 2Y 16 1A A/B NC VCC G 1 2 15 3 14 4 13 5 12 6 11 7 10

2SB992

Abstract: 2SD1362
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB992 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Collector Power Dissipation: PC= 40W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max)@ IC= -4A

2SC4160

Contextual Info: Inchange Semiconductor Product Specification 2SC4160 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High breakdown voltage. ・High reliability. ・Fast switching speed ・Wide area of safe operation APPLICATIONS ・400V/4A switching regulator applications