RK30 Search Results

RK3055E

Contextual Info: Transistors Small switching 60V, 8A RK3055E FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET

iNAND eMMC 4 41

Abstract: rk3066 ARGB888
Contextual Info: RK3066 Datasheet brief Rev1.0 RK3066 Datasheet brief Revision 1.0 Feb. 2012 Rockchips Confidential 1 RK3066 Datasheet brief Rev1.0 Revision History Date Revision Description 2011-10-30 0.0 Initial Release 2012-02-15 1.0 Add package information Rockchips Confidential

Contextual Info: Transistors Small switching 60V, 8A RK3055E •F e atures 1 ) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. •E xte rn a l dimensions (Units: mm)

mosfet

Abstract: diode 60V 8A RK3055E
Contextual Info: Transistors Small switching 60V, 8A RK3055E FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET

3055e mos

Abstract: 3055e RK3055E
Contextual Info: RK3055E Transistors 10V Drive Nch MOS FET RK3055E zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm CPT3 6.5 5.1 2.3 0.5 0.75 (1) (2)Drain 0.8Min. 0.65 0.9 (1)Gate 9.5 2.5 0.9 1.5 5.5 1.5 zFeatures 1) Low On-resistance. 2) Fast switching speed.

Contextual Info: Transistors Small switching 60V, 8A RK3055E •F e a t u r e s 1) •E x te r n a l dim ensions (Units: mm) Low on-resistance. 2) H igh-speed switching. 3) W ide SO A (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6)

3055e

Abstract: RK3055E
Contextual Info: RK3055E Transistors 10V Drive Nch MOSFET RK3055E zStructure Silicon N-channel MOSFET zDimensions Unit : mm CPT3 6.5 5.1 2.3 0.5 0.75 (1) (2)Drain 0.8Min. 0.65 0.9 (1)Gate 9.5 2.5 0.9 1.5 5.5 1.5 zFeatures 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area).

RK3055E

Abstract: RG4 DIODE
Contextual Info: SPICE PARAMETER RK3055E by ROHM TR Div. * RK3055E NMOSFET model * Date: 2006/10/16 * This model includes a diode between source and drain. *D G S .SUBCKT RK3055E 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1

g10q

Contextual Info: Transistors Small switching 60V, 8A RK3055E •Fe atu re s 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. ►External dimensions (Units: mm)

Contextual Info: TPS65910, TPS65910A, TPS65910A3, TPS659101, TPS659102, TPS659103 TPS659104, TPS659105, TPS659106, TPS659107, TPS659108, TPS659109 www.ti.com SWCS046S – MARCH 2010 – REVISED AUGUST 2013 Integrated Power Management Unit Top Specification Check for Samples: TPS65910, TPS65910A, TPS65910A3, TPS659101, TPS659102, TPS659103, TPS659104, TPS659105, TPS659106,

RSD130P10

Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
Contextual Info: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬DŽ 01 MOSFET Contents

Contextual Info: HIGH U S E HIGH CURRENT MINIATURE RECTIFIERS SMALL SIZE MOLDED PACKAGE PRV 1,000 TO 12,000 VOLTS FAST RECOVERY R _ SERIES AVALANCHE CHARACTERISTICS EOI Type No. Peak Reverse Voltage PRV (Volts) EF100 EF150 EF200 EG200 EG250 EG300 EH300 EH350 EH400 EK450

MCL rk-2

Abstract: MCL sk-2 ak2 connector MCL RK-3 MCL AK2 MCL AK-2
Contextual Info: FREQUENCY DOUBLERS Surface Mount ❏ 50Ω HIGH HARMONIC REJECTION 50 kHz to 9600 MHz SURFACE MOUNT KBA SYK FREQUENCY MHz MODEL NO. Input Output SK AK RK RF INPUT PWR dBm FD FK i HARMONIC OUTPUT dBc CONVERSION LOSS dB Min. Max. Input freq. Typ. Max. Typ. F1

rk903

Abstract: DTC34LM85A CE7121MM33 ALC5631 DTC34LM85 ESDA6V8 DTC34LM85AL CM3217 QFN48 6x6 ALC5631Q
Contextual Info: 5 4 C B 2 1 PCB POWER WIRE WIDTH INDICATE CONTENT INDEXING D 3 01. INDEX 02.Modify note 03.Block Diagram 04.SYSTEM POWER DIAGRAM 05.DC/CHARG 06.SYSTEM POWER 07.USB OTG/VIB 08.DDR3 09.FLASH/SD 10.GPIO 11.AUDIO 12.LCD PANEL 13.TOUCH PANEL 14.HDMI/ATSC 15.CAMERA/G_SENSOR/KEY/COMP/IR

MCL rk-2

Abstract: 10B02 FD2 Connectors GK 105
Contextual Info: FREQUENCY MULTIPLIERS Surface Mount ❏ 50Ω HIGH HARMONIC REJECTION 50 kHz to 10000 MHz SURFACE MOUNT KC2 KBA AK SYK RK SK DOUBLERS FREQUENCY MHz MODEL NO. Input Output RF INPUT PWR dBm i HARMONIC OUTPUT dBc CONVERSION LOSS dB Min. Max. Input freq. Typ.

11721

Abstract: tb99 11665 MCL rk-2
Contextual Info: Surface Mount Frequency Multiplier Output KBA-40 5400 to 9600 MHz Maximum Ratings Operating Temperature Features -40°C to 85°C Storage Temperature -55°C to 100°C RF Input Power 200mW • • • • wideband, 5400 to 9600 MHz low insertion loss, 12.3dB typ.

EF to RR

Abstract: RF200B eF200 EH300 EK500 RF200A RK600B EH400 EG300 RK500A
Contextual Info: EF to RR HIGH VOLTAGE HIGH CURRENT MINIATURE RECTIFIERS SMALL SIZE MOLDED PACKAGES PRV 1,000 TO12,000 VOLTS FAST RECOVERY R_ SERIES AVALANCHE CHARACTERISTICS EDI Type No. Peak ReverseVoltage PRV(Volts ) EF100 EF150 EF200 EG200 EG250 EG300 EH300 EH350 EH400

electret condenser microphone element

Abstract: 90A4360 TA4F 86A350 shure PS1A SM93 circuit diagram of sound wireless shure wireless shure preamplifier circuit diagram
Contextual Info: Shure Brothers Incorporated 222 Hartrey Avenue Evanston IL 60202-3696 U.S.A. Models WL93 and SM93 User Guide MODEL WL93 AND SM93 SUBMINIATURE CONDENSER MICROPHONES The SM93 is powered by phantom power supplied by broadcast, sound reinforcement or recording equipment, or

Contextual Info: NON-CATALOG X2 RK-3000+ RK-3000 Frequency Multiplier 50Ω Output 140 to 3000 MHz Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Input Power 200mW Permanent damage may occur if any of these limits are exceeded.

s12w

Abstract: PDC 140M PLP-21.4 S-40W s40w T560N T1-1-KK BA25L
Contextual Info: Model Index D o t in d ic a t e s s u r fa c e m o u n t m o d e ls . mixers m odel A D E 'l . ADE-l A S K . AD E-l H . A D E -IH W . AD E-l L . A D E 'l LH . A D E 'IL H W .

BQ24153

Abstract: schematic diagram TCON lcd samsung tps51631 LG 21 color tv Circuit Diagram schematics ultraslim UCD90120 TPS65175 tps65642 LM2740 INA230 QFN 10 2x2 footprint
Contextual Info: Power Management Guide Power Management Guide 2014 2014 www.ti.com/power www.ti.com/power Power Management Guide Introduction and Contents Texas Instruments TI offers complete power solu­tions with a full line of highperformance products. These products, which range from standard linear

NGRM-ENC-200-01

Abstract: NGRM-ENC-000-01
Contextual Info: Protection Relays & Controls Neutral Grounding Resistor Monitoring NGRM-ENC SERIES NGRM-ENC Description The NGRM-ENC Enclosed Neutral-Grounding-Resistor NGR Monitor series is a Type 4X enclosure housing a Littelfuse Startco SE-325 or SE-330 Neutral-Grounding-Resistor Monitor

sony lcd tv circuit diagram free

Abstract: sony DVD player with usb port circuit diagram fingerprint scanner circuit HD6417727F160CV BGA 441 SH7724 R5F61652 R5F72167ADFA R8A77240 yamaha electone
Contextual Info: 2009.10 State-of-the-art technologies of the Renesas <EQUSB> support the future of society. The USB specification established to connect the PC peripheral equipment is currently used for a number of different products in various scenarios, such as office equipment, mobile devices,

lockout relay

Abstract: SE-325 PGM-8325
Contextual Info: Protection Relays Neutral-Grounding-Resistor Monitoring SE-325 Series PGM-8325 Neutral-Grounding-Resistor Monitor Description The SE-325 Neutral-Grounding-Resistor Monitor is used on resistance-grounded systems up to 25 kV to monitor the integrity of the neutral-to-ground path and to detect ground