RJK60 Search Results

RJK6014DPP

Abstract: RJK6014DPP-00-T2
Contextual Info: RJK6014DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1531-0100 Rev.1.00 Apr 17, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN D 1. Gate

Contextual Info: Preliminary Datasheet RJK6012DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1581-0200 Rev.2.00 Jun 30, 2010 Features • Low on-resistance RDS on = 0.77  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching

RJK6018DPK

Contextual Info: Preliminary Datasheet RJK6018DPK R07DS0495EJ0200 Previous: REJ03G1537-0100 Rev.2.00 Jul 22, 2011 600 V - 30 A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.2  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  Low leakage current

Contextual Info: Preliminary Datasheet RJK6014DPP-E0 600V - 16A - MOS FET High Speed Power Switching R07DS0613EJ0100 Rev.1.00 Mar 19, 2012 Features • Low on-resistance RDS on = 0.475  typ. (at ID = 8 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching

Contextual Info: Preliminary Datasheet RJK6006DPP-E0 600V - 5A - MOS FET High Speed Power Switching R07DS0610EJ0100 Rev.1.00 Mar 16, 2012 Features • Low on-state resistance RDS on = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)  High speed switching Outline RENESAS Package code: PRSS0003AG-A

Contextual Info: Preliminary Datasheet RJK60S7DPK-M0 600V -30A - SJ MOS FET High Speed Power Switching R07DS0642EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.100  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  High speed switching

Contextual Info: Preliminary Datasheet RJK6026DPP-E0 600V - 5A - MOS FET High Speed Power Switching R07DS0614EJ0100 Rev.1.00 Jun 21, 2012 Features • Low on-resistance RDS on = 2.0  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching

Contextual Info: Preliminary Datasheet RJK6013DPP R07DS0253EJ0200 Previous: REJ03G1582-0100 Rev.2.00 Feb 04, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.58  typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C)  Low leakage current

RJK6032DPD

Contextual Info: Preliminary Datasheet RJK6032DPD 600V - 3A - MOS FET High Speed Power Switching R07DS0837EJ0200 Rev.2.00 Aug 06, 2012 Features • Low on-resistance RDS on = 3.3  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting

Contextual Info: Preliminary Datasheet RJK6002DPE R07DS0214EJ0100 Rev.1.00 Jun 21, 2012 600V - 2A - MOS FET High Speed Power Switching Features • Low on-resistance RDS on = 5.7  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting

Contextual Info: Preliminary Datasheet RJK6018DPM R07DS0131EJ0200 Rev.2.00 Jun 21, 2012 600V - 30A - MOS FET High Speed Power Switching Features • Low on-resistance RDS on = 0.2  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching

RJK60S7DPP-E0

Abstract: rjk60s7dpp
Contextual Info: Preliminary Datasheet RJK60S7DPP-E0 600V -30A - SJ MOS FET High Speed Power Switching R07DS0643EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.100  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  High speed switching

Contextual Info: Preliminary Datasheet RJK60S3DPP-E0 600V - 12A - SJ MOS FET High Speed Power Switching R07DS0637EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.35  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)  High speed switching

RJK60S7DPQ-E0

Contextual Info: Preliminary Datasheet RJK60S7DPQ-E0 600V - 30A - SJ MOS FET High Speed Power Switching R07DS0736EJ0200 Rev.2.00 Jul 26, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.1  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  High speed switching

Contextual Info: Preliminary Datasheet RJK60S5DPQ-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0734EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching

Contextual Info: Preliminary Datasheet RJK6012DPE R07DS0445EJ0300 Previous: REJ03G1481-0200 Rev.3.00 Jun 17, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.77  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)  Low leakage current

Contextual Info: Preliminary Datasheet RJK60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0641EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching

PRSS0004ZG-A

Abstract: RJK6006DPD
Contextual Info: Preliminary Datasheet RJK6006DPD Silicon N Channel MOS FET High Speed Power Switching REJ03G1935-0100 Rev.1.00 Jun 01, 2010 Features • Low on-state resistance RDS on = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)  High speed switching Outline

Contextual Info: Preliminary Datasheet RJK60S2DPD 600V - 8A - SJ MOS FET High Speed Power Switching R07DS0741EJ0001 Rev.0.01 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.53 Ω typ. (at ID = 4 A, VGS = 10 V, Ta = 25°C) Outline RENESAS Package code: PRSS0004ZG-A

to3pfm

Abstract: PRSS0003ZA-A RJK6015DPM RJK6015DPM-00-T1
Contextual Info: RJK6015DPM Silicon N Channel MOS FET High Speed Power Switching REJ03G1752-0100 Rev.1.00 Nov 13, 2008 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003ZA-A Package name: TO-3PFM D 1. Gate

PRSS0004ZA-A

Abstract: RJK6002DPD-00-J2 RJK6002DPD
Contextual Info: RJK6002DPD Silicon N Channel MOS FET High Speed Power Switching REJ03G1483-0100 Rev.1.00 Nov 09, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZA-A Package name : MP-3A 2, 4 4 1.

RJK6012DPE-00-J3

Abstract: RJK6012DPE
Contextual Info: RJK6012DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1481-0200 Rev.2.00 Oct 16, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B Package name: LDPAK(S -(1) ) D

Contextual Info: Preliminary Datasheet RJK6013DPE R07DS0486EJ0200 Previous: REJ03G1535-0100 Rev.2.00 Jun 21, 2012 600V - 11A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.58  typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C)  Low leakage current

Contextual Info: Preliminary Datasheet RJK6024DPE 600V - 0.4A - MOS FET High Speed Power Switching R07DS0424EJ0200 Rev.2.00 Feb 27, 2012 Features • Low on-resistance RDS on = 28  typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching