RJK0206DPA Search Results

RJK0206DPA Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
RJK0206DPA-00#J5A		Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 70A WPAK	Original	PDF		7

RJK0206DPA Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
RJK0206DPA Contextual Info: Preliminary Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev.2.00 Apr 27, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting	Original	RJK0206DPA REJ03G1923-0200 PWSN0008DC-A current9044 RJK0206DPA	PDF
RJK0206DPA Contextual Info: Preliminary Datasheet RJK0206DPA 25 V, 70 A, 1.8 m max. Built in SBD N Channel Power MOS FET High Speed Power Switching R07DS0941EJ0300 Previous: REJ03G1923-0200 Rev.3.00 Nov 12, 2012 Features •       High speed switching Capable of 4.5 V gate drive	Original	RJK0206DPA R07DS0941EJ0300 REJ03G1923-0200) PWSN0008DC-B RJK0206DPA	PDF
RJK0206DPA Contextual Info: Preliminary Datasheet RJK0206DPA 25V, 70A, 1.8m max. Built in SBD N Channel Power MOS FET High Speed Power Switching R07DS0941EJ0400 Rev.4.00 Mar 21, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current	Original	RJK0206DPA R07DS0941EJ0400 PWSN0008DE-A RJK0206DPA	PDF
PWSN0008DC-A Abstract: RJK0206DPA Contextual Info: Preliminary Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev.2.00 Apr 27, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting	Original	RJK0206DPA REJ03G1923-0200 PWSN0008DC-A Chann9044 PWSN0008DC-A RJK0206DPA	PDF