RJH60V3BDPP Search Results

Contextual Info: Preliminary Datasheet RJH60V3BDPP-M0 600V - 17A - IGBT Application: Inverter R07DS0761EJ0100 Rev.1.00 May 25, 2012 Features • Short circuit withstand time 6 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)

RJH60V3BDPP

Contextual Info: Preliminary Datasheet RJH60V3BDPP-M0 600V - 17A - IGBT Application: Inverter R07DS0761EJ0100 Rev.1.00 May 25, 2012 Features • Short circuit withstand time 6 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)

RJK03P7DPA

Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
Contextual Info: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position