RJH60M1 Search Results

RJH60M1 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
RJH60M1DPE-00#J3		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 16A 52W LDPAK	Original	PDF		10
RJH60M1DPP-M0#T2		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 16A 30W TO-220FL	Original	PDF		10

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Renesas Electronics Corporation


Renesas Electronics Corporation RJH60M1DPP-M0-T2 IGBT TRENCH 600V 16A TO-220FL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJH60M1DPP-M0-T2	Tube	62		1	1 $3.33 10 $2.17 100 $2.17 1000 $2.17 10000 $2.17	Buy Now
Renesas Electronics Corporation RJH60M1DPE-00-J3 IGBT TRENCH 600V 16A LDPAK
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DigiKey ()	RJH60M1DPE-00-J3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	RJH60M1DPE-00-J3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	RJH60M1DPE-00-J3		2,358			1 - 10 - 100 - 1000 - 10000 -	Get Quote

RJH60M1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
RJH60M1DPE Contextual Info: Preliminary Datasheet RJH60M1DPE 600V - 8A - IGBT Application: Inverter R07DS0529EJ0300 Rev.3.00 May 25, 2012 Features • Short circuit withstand time 8 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)	Original	RJH60M1DPE R07DS0529EJ0300 PRSS0004AE-B RJH60M1DPE	PDF
PRSS0003AF-A Contextual Info: Preliminary Datasheet RJH60M1DPP-M0 600 V - 8 A - IGBT Application: Inverter R07DS0528EJ0100 Rev.1.00 Sep 02, 2011 Features • Short circuit withstand time 8 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)	Original	RJH60M1DPP-M0 R07DS0528EJ0100 PRSS0003AF-A O-220FL) PRSS0003AF-A	PDF
Contextual Info: Preliminary Datasheet RJH60M1DPP-M0 600V - 8A - IGBT Application: Inverter R07DS0528EJ0300 Rev.3.00 May 25, 2012 Features • Short circuit withstand time 8 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)	Original	RJH60M1DPP-M0 R07DS0528EJ0300 PRSS0003AF-A O-220FL)	PDF
Contextual Info: Preliminary Datasheet RJH60M1DPE 600V - 8A - IGBT Application: Inverter R07DS0529EJ0300 Rev.3.00 May 25, 2012 Features • Short circuit withstand time 8 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)	Original	RJH60M1DPE R07DS0529EJ0300 PRSS0004AE-B	PDF
rjh60m1 Contextual Info: Preliminary Datasheet RJH60M1DPE 600 V - 8 A - IGBT Application: Inverter R07DS0529EJ0100 Rev.1.00 Sep 02, 2011 Features • Short circuit withstand time 8 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)	Original	RJH60M1DPE R07DS0529EJ0100 PRSS0004AE-B rjh60m1	PDF
Contextual Info: Preliminary Datasheet RJH60M1DPP-M0 600V - 8A - IGBT Application: Inverter R07DS0528EJ0300 Rev.3.00 May 25, 2012 Features • Short circuit withstand time 8 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)	Original	RJH60M1DPP-M0 R07DS0528EJ0300 PRSS0003AF-A O-220FL)	PDF
RJK03P7DPA Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 Contextual Info: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position	Original	0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1	PDF