RJH1CD5 Search Results

Contextual Info: Preliminary Datasheet RJH1CD5DPQ-E0 1200V - 20A - IGBT Application: Inverter R07DS0517EJ0500 Rev.5.00 Jun 12, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)

PRSS0003ZH-A

Contextual Info: Preliminary Datasheet RJH1CD5DPQ-A0 1200 V - 15 A - IGBT Application: Inverter R07DS0451EJ0100 Rev.1.00 Jul 22, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25°C)

RJH1CD5

Contextual Info: Preliminary Datasheet RJH1CD5DPQ-E0 1200V - 20A - IGBT Application: Inverter R07DS0517EJ0400 Rev.4.00 Jan 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)

Diode BAY 73

Contextual Info: Preliminary Datasheet RJH1CD5DPQ-E0 1200V - 20A - IGBT Application: Inverter R07DS0517EJ0500 Rev.5.00 Jun 12, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)

PRSS0003ZE-A

Contextual Info: Preliminary Datasheet RJH1CD5DPQ-E0 1200 V - 15 A - IGBT Application: Inverter R07DS0517EJ0100 Rev.1.00 Aug 11, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25°C)

RJK03P7DPA

Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
Contextual Info: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position