RJH 33 Search Results

C5101

Abstract: marking code F3 rjh series marking code J7 10v1000
Contextual Info: RJB MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS GREEN CAP 105°C Use, Miniature, High-Reliability, Low Impedance Capacitors ● ● Low 105˚C Impedance 5000hours Anticleaning solvent Smaller and higher ripple current than RJH Series. Guarantees 5000 hours at 105°

RJH 30 E3

Abstract: 10V560 C5101 f4180
Contextual Info: RJH 小形アルミニウム電 解コンデンサ 105℃高信頼性低インピーダンス品 GREEN CAP 低 Z 105℃ 耐洗浄 5000時間 ● 105℃, 5000時間保証（φ5~6.3 : 2000時間保証） （φ8∼10 : 3000時間保証）

RJH6676

Abstract: 2n6676
Contextual Info: Power Transistors. T~33~\3 2N6676, 2N6677, 2N6678, RJH6676, RJH6677, RJH6678 File Number HARRIS SEMICOND SECTOR 1 5 -A S w ite h ffla X 27E D • 1165 4302S71 QQSGObQ S BiHAS P o w e r T ra n s is to rs TERMINAL DESIGNATIONS H ig h -V o lta g e N -P -N T y p e s fo r O ff-L in e P o w e r S u p p lie s and

RJH 32

Contextual Info: D S 1633 D A LLA S dsi633 s e m ic o n d u c to r High Speed Battery Recharger FEATURES PIN ASSIGNMENT TO-220 • Recharges Lithium, NiCad, NiMH and Lead acid bat­ teries o • Retains battery and power supply limits in on-board memory • Serial one-wire interface is used to program operat­

BDT63BF

Abstract: BDT62AF 3SM diode 62AF BDT62BF BDT62CF BDT62F BDT63AF BDT63CF BDT63F
Contextual Info: BDT62F; BDT62AF ^BDT62BF; BDT62CF PHILIPS I N T E R NA TI O NA L SbE D 711DöBb 0 0 4 3 2 4 fl SILICON DARLINGTON POWER TRANSISTORS 23 B T P lTlÑ ” T-33-3/ PNP silicon darlington power transistors in a SOT186 envelope w ith an electrically insulated mounting

Contextual Info: 2 TH I S DRAW ING IS U NP UBL I S HE D. C O P Y R I G H T 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S CORPORATION. ALL RIGHTS LOC AD RE S E RV E D. A. PHOSPHOR BRONZE A GLASS F ILLED POLYESTER lA REV 1S I O N S D I ST 47 p LTR

SD2440

Contextual Info: SD2440 Silicon Phototransistor FEATURES + Miniature', hermetically sealed, pil style, metal can package ' 48r acceplance an^e » Wide cpara.ting temperature ranga -55 C Id + 125' Cl ' Ideal lor direct rmunling bo pcinled circuit boards ia g » Wideaenartiwty ranges

alc 97

Abstract: LA7048 pht 094 60IA
Contextual Info: 1 1 1 L A •m Nal 4 5 0 SANYO 7 4 8 Ï S ' J ' / y ï ' J - T M M D K 0033 V T R f l; * < 7 f A Â Ê B É 7 > ? - / A L A 70d8 li VTTÍ & » ÏT V r , í*' ¿f 17 ; i t A. ¿- cr>y □ ì& S .4 ALC 0 » , "/ ? i r i 7 7 7 c H i t t , I3¡»<7> JB5*-ít t Ú - i t i * /

S1533

Abstract: 1A GI 242
Contextual Info: D S1633 DALLAS SEMICONDUCTOR FEATURES DS1633 High-Speed Battery Recharger PIN A S S I G N M E N T T O - 2 2 0 • Recharges Lithium, NiCad, NiMH and Lead a d d bat­ teries • Retains battery and power supply lim its in onboard mem ory • Serial 1 -w ire interface is used to program operat­

cr 406 transistor

Abstract: BUZ54
Contextual Info: PowerMOS transistor BUZ54 N AMER PHILIPS/DISCRETE — DhE D • ^ 5 3 ^ 3 1 0D14717 5 ■ “ T - $ cH 3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in

acrian RF POWER TRANSISTOR

Abstract: TU S1 3003 VTV-300 VTV-300-2 DDD1557 acrian RF POWER TRANSISTOR cd4792-4 VTV-300-4 F627 F627-8 F627-8-Q1
Contextual Info: 0182998 ACRIAN m ybui i» m w « p in y in a w M K • ■ ■ <p w * w T7 INC m m w v m m « m m h D Ë^G lflETifl n a n a a m a m n n w □D01524 S T—33—13 i A GENERAL VTV-300 DESCRIPTION The VTV-300 is a silicon NPN transistor designed for broadcast

RK Series

Abstract: marking code rpk C5101 Marking 1380
Contextual Info: RK,RPK MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS 125°C Use, Long Life Capacitors GREEN CAP Low 125˚C Impedance 5000hours Anticleaning solvent Guarantees 5000 hours at 125℃. φ8 : 2000 hours, φ10 : 3000 hours . Best-suited to smoothing circuits and control circuits for industrial equipment

k3017

Abstract: 2SK3017
Contextual Info: TO SH IBA 2SK3017 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK3017 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance

Contextual Info: Product specification Philips Semiconductors Programmable Logic Devices Programmable logic sequencer 16x48x8 PLUS105-55 PIN CONFIGURATIONS DESCRIPTION FEATURES The PLUS105-55 is a bipolar programmable state machine of the Meaiy type. Both the AND and the OR array are userprogrammable. All 48 AND gates are

Contextual Info: N AMER PHILIPS/DISCRETE TDD D bb53T 31 0010L iT2 h • BZW 86 S E R IE S T " TR A N S IE N T SUPPRESSO R DIODES A ran g e of diffused silicon diodes in a DO-30 m etal envelope intended for u se in the p r o ­ tectio n of the e le c tric a l and elec tro n ic equipm ent ag a in st voltage tra n sie n ts.

Diode 7c2

Abstract: 7C2 diode EER28L 2sk727 elna 16v 47uF capacitor ripple 100UF 400V EER 42 transformer TF411 VT-40A 452v
Contextual Info: V T- 4 0 S e r i e s A C / D C M e t a l E n c l o s e d A CUI INC COMPANY 5 " x 4 " x 1 . 5 " , 8 5 ~ 2 6 4 VA C , 4 0 W, T R I P L E O U T P U T .LOW COST, HIGH RELIABILITY .COMPACT SIZE, LIGHT WEIGHT .105ºC OUTPUT CAPACITOR .100% FULL LOAD BURN-IN TEST

8748E

Abstract: LA 4440 IC 555E-03 IC 4033 internal structure ds1633k
Contextual Info: D S 1 63 3 D A L L A S s e m ic o n d u c to r FEATURES DS1633 High-Speed Battery Recharger PIN ASSIGNMENT TO-22Q Recharges Lithium, NiCad, NiMH and Lead a d d bat­ teries Retains battery and power supply lim its in onboard mem ory Serial 1 -w ire interface is used to program operat­

Contextual Info: CY7C269 CYPRESS Features • CMOS for optimum speed/power • High speed commercial and military — 15-ns address set-up — 12-ns clock to output • Low power — 660 mW (commercial) — 770 mW (military) • On-chip edge-triggered registers — Ideal for pipelined micropro­

paccom EVN

Abstract: paccom capacitor elna rjj RJ4 Elna elna rsg RJ3 Elna rubycon ssp capacitor cross reference ECEA panasonic Chemi-Con LXJ
Contextual Info: Rev: 6/98 EVN Series Bi-Polar, 85°C Radial,Miniature Aluminum Electrolytic Capacitor An ISO 9002 Registered Company EVN Series Bi-Polar Aluminum Electrolytic ▼ Standard ▼ Radial Aluminum Electrolytic ▼ EVN Series Capacitors Features: • Reliable bi-polar design

RJH 60 f7

Abstract: PLS105A PLS105 PLS Philips 105 PLUS105-70A PLUS105-70N PLUS105-70N3 ck105
Contextual Info: P R O G R A M M A B LE LO G IC DEVIC E S PLUS105-70 Programmable logic sequencer 16x48x8 Product specification June 1 5 ,1 9 9 4 IC13 hilips Semiconductors I PHILIPS PHILIPS V\ • -M I 711062b 007^702 Ô44 Product specification Philips Semiconductors Programmable Logic Devices

nichicon se SERIES

Abstract: Nichicon se capacitor kxj nichicon UPF RUBYCON BXA Series elna RJF elna capacitor RJH panasonic EEUFC Nichicon LXZ RJ3 Elna
Contextual Info: Extended Lifetime Aluminum Electrolytic Capacitors Longer Life Applications – End Products Component Life Time Behavior Review of Life Time Ratings Selection Based upon Lifetime Ratings Extended Lifetime Products +150°C & +125°C Rated Products Example Application Review

RV12P2000

Abstract: iw 1688 RL12T1 RL12T15 N860 ScansU9X22 rd 1679
Contextual Info: TELIFUNKEN W e h r m a c h tr ö h re n Ausschließlich fUr kommerzielle Verwendung — nicht im Rundfunkhandel erhältlich Z u r B e ach tu n g : Für Neuentwicklungen dürfen nur die fettgedruckten Röhrentypen Verwendung finden. Die in Kursiv­ schrift aufgeführten Röhrentypen sind nur noch in beschränkter Stückzahl für Ersatzbestückung lieferbar.

LC 7258

Abstract: 7C266 203CE
Contextual Info: CY7C266 / CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Direct replacement for 27C64 EPROMs • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military)

semiconductor c243

Abstract: C2432
Contextual Info: CY7C243 CY7C244 4Kx8 Reprogrammable PROM Features Functional Description • The CY7C243 and CY7C244 are high-performance 4K x 8 CMOS PROMs. The CY7C 243 and CY7C244 are packaged in 300-m il-wide and 600-mil-wide packages respectively. The re­ programmable packages are equipped with an erasure w in­