RIN F 75 Search Results

push button switch

Abstract: IP60G
Contextual Info: O p tio n a l 0 - rin g fro n t p a n e l s e a lin g F o o tp rin t / P rin t L a y o u t THT h o riz o n ta l (view from m ounting side) / /✓ t L Jr. / 4x2,54 H h-O F 3r Sr 3r C A ÌNCNC r r x N ? / 4 F ro n t p a n e l c u t- o u t 3 = / 6,2 D11 J f

Contextual Info: RML Hi Frequency Power Inductors T h e n e w R M L lin e o f s h ie ld e d in d u c to rs c o n s is ts o f 4 s e rie s o f p o w e r c h o k e s d iffe rin g in s ize a n d p o w e r c a p a b ility , c o v e rin g a w id e ra n g e o f in d u c ta n c e a n d

Contextual Info: MOUNTING INSTRUCTIONS M 01 R E T A IN IN G BODY R IN G C O U P L IN G N U T IN T E R F A C E SEAL CONNECTOR R 121 052 To ol k it R 2 8 2 118 Item assem bly jig p o s itio n e r cable trim m in g to o l re ta in in g rin g insert to o l re ta in in g rin g pliers

TB-72EV32

Abstract: LC7232 LC7232 -8800 LT4 H4 CU1 sanyo sanyo VLM
Contextual Info: O rd e rin g number: EN 3619A N&3619A CMOS LSI LC7232 // Single-chip PLL and Microcontroller with LCD Driver _ / . / '" ' - h , _ / ./ ' X . N , j f ’ V 'K %. ' ‘V OVERVIEW li, . ^ ' The LC7232 is a single-chip microcontroller that incorporates a phase-iocJsé^Ìoop

N and P MOSFET

Contextual Info: O rd e rin g n u m b e r: EN 4895 _ FX855 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC/DC Converter Applications F eatu re s • Composite type composed of a low ON-resistance N-channel MOSFET for ultrahigh-speed switching

CQ 523

Abstract: cq 531 mc 5357 Z0 607 2SC5245 FC157 s22L transistor but 607 cq 765 NPN/CQ 523
Contextual Info: O rd e rin g n u m b e r: EN5433 _ FC157 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amp, Differential Amp Applications F eatu re s •Composite type with 2 transistors contained in the CP package currently in use, improving the

31Q7A

Abstract: sanyo AG
Contextual Info: O rd e rin g n u m b e r : EN 31Q7A ; _ F C 8 0 1 No.3107A Silicon Epitaxial Planar Type Composite Diode for H igh-Speed Sw itching Applications Features • Composite type with 4 diodes contained in the CP package currently in use, improving the mounting

30621

Contextual Info: O rd e rin g n u m b e r: EN3Q62A FC 120 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency General-Purpose Amp, Differential Amp Applications F e a tu re s • Composite type with 2 transistors contained in the CP package currently in use, improving the

2R5S

Abstract: Scans-00707
Contextual Info: F î DWN.: CHK.: APP.: J Ng DATE: D c t— 01 - 0 4 DATE:0 c t- 0 1 — 0 4 pATE:Q c t-0 1 - 0 4 XFHCL2 S E R IE S INDUCTORS * Suited f o r IR R eflow S o ld e r * F re q u e n c y * Com pact F o o tp rin t f o r High * Ideal t o r Energy Sto ra g e A p p lic a tio n s

Contextual Info: I O rd e rin g n u m b e r : EN 1482B LB 1249 N0.1482B Monolithic Digital IC SA\YO i Active-Low Input, 8-Unit,High-Current, Low-Saturation Driver Applications . 4-phase stepping motor driver o f 2 channels. . Especially suited for X-Y axis plotter printer driver.

Contextual Info: O rd e rin g n u m b e r: EN 3 1 3 4 SA\YO i t 2SA1730 No.3134 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications F e a tu re s •Adoption of FBET, MBIT processes • Large current capacity ■Low collector-to-emitter saturation voltage

2SA1730

Contextual Info: O rd e rin g n u m b e r : E N 3 1 3 4 2 S A 1730 No.3134 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications F eatures • Adoption of FBET, MBIT processes •Large current capacity • Low collector-to-emitter saturation voltage ■Fast switching speed

2SK1427

Abstract: 2052B
Contextual Info: O rd e rin g n u m b e r: E N 3 5 6 5 _ 2SK1427 No. 3565 N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatures • Low ON-state resistance. • Very high-speed switching. • Converters. A bsolute M aximum R atings at Ta = 25°C

460 kHz Murata am filter

Abstract: sfz460a 7XNS-A7523DY TDA1572T sfz455 sfz455a S020 a7518 radio av receiver schematic diagram 7XNS-A7521AIH
Contextual Info: TDA1572T J v_ AM RECEIVER G E N E R A L DESCRIPTIO N The T D A 1 5 7 2 T integrated AM receiver c irc u it perform s all the active fu n ction s and part o f the filte rin g required o f an A M radio receiver. I t is intended fo r use in mains-fed home receivers and car radios.

ns 4203

Abstract: 2SK1886 FI1216
Contextual Info: O rd e rin g n u m b e r :E N 4 2 0 3 SA\YO 2SK1886 No.4203 N-Channel MOS Silicon FE T i Very High-Speed Switching Applications F e a tu re s •Low ON resistance. - Very high-speed switching. •Low-voltage drive. - M icaless package facilitating mounting.

L9047

Abstract: CD54 ML4890 ML4890CS-3 ML4890CS-T L1070 COILTRONICS 407 241-7876
Contextual Info: G nge RIN U ure Ra t a r T e p EA l Tem April 1997 F mercia C nt ed Com 0 C to 70 uipme –2 eld Eq h d n a H rtable for Po Extend ML4890 High Efficiency, Low Ripple Boost Regulator GENERAL DESCRIPTION FEATURES The ML4890 is a high efficiency, PFM Pulse Frequency

dubilier capacitor ce

Contextual Info: Cornell Dubilier r Type E S IW * Surface Mount Polymer Aluminum Capacitors 3 Times the H igh Frequency Filtering Power o f Tantalum Ideal fo r h ig h -fre q u e n c y filte rin g in surface m ount technology pow er supplies and D C/D C capacitors deliver the stability and perform ance

BMS 13-48

Abstract: BLY14 BMS13-48 raychem termination kit PRICE NSA93 UT-141AA arinc 600 coax pin LLB DU UT141 coaxial nsa935
Contextual Info: A RIN C 600 Rack and Panel Connectors B K A D /E /F Size 5 Coax Contact Rear insertable / removable Rack and Panel Connectors Crimp Center Contact— Conforming to A R IN C 600 Crim p Toolinq C en te r C on tact P art Number C able A cco m m o ­ dation

Contextual Info: O rd e rin g n u m b e r : E N *5 8 2 4 CMOS 1C LC895994 CD-R Encoder/Decoder LSI with Built-in ATAPI IDE Interface Preliminary Overview Package Dimensions The LC895994 is a CD-R LSI that provides a wide range o f fu nctions including C D -R O M decoding (including

ML-6442

Abstract: 813 electron tube 5000-microsecond amplifier marking 365 w shape heater 808 triode Raytheon Company machlett triode C 547 C M/6442-R
Contextual Info: DESCRIPTION T h e M L -6 4 4 2 is a m etal-ceram ic envelope, m edium -m u ru gged m etal-ceram ic construction w ith rin g type seals, triode o f the planar-electrode type design ed specifically for use as a plate-pulsed oscillator and am plifier at frequencies

Contextual Info: O rd e rin g n u m b e r: E N 3 8 7 5 SB20-05Z No.3875 I Schottky B arrier Diode SAMYO 50V, 2A Rectifier A p p licatio n s • High frequency rectification switching regulators, converters, choppers . F e a tu re s •Low forward voltage (Vp max = 0.55V).

S08N

Abstract: inductor 19.4 uh with ESR rating CD54 ML4790 ML4790CS ML4790ES
Contextual Info: G nge RIN U ure Ra t a r T e p EA l Tem April 1997 F mercia C nt ed Com 0 C to 70 uipme –2 eld Eq h d n a H rtable for Po Extend ML4790 Adjustable Output, Low Ripple Boost Regulator GENERAL DESCRIPTION FEATURES The ML4790 is a high efficiency, PFM Pulse Frequency

BPD-HQA33

Abstract: MARK A11
Contextual Info: S U R F A C E MOUNT PHOTO DIODES 1206 BPD-HQx33 Series C a t h o d e M ark PHOTO DIODE R0 4 015 R 0 .2 (.0 0 8 ) MAX. R0.1 ( .0 0 4 ) l.l( .0 4 3 ) + 0 .2 C a th o d e Mark w C a th o d e o — 44— 0 Anode 0 .7 5 (.0 2 9 )l-1 75 (.0 2 9 ) F o r reflow s o ld e rin g

XFHCL5-R87

Contextual Info: DWN.: I r j XFMRS $$ PATF: Oct-01 - 0 4 XFHCL5 SER IE S CHK.: APP.: J Nq DATF:Qct~01 - 0 4 DATF: Oct-01 - 0 4 INDUCTO RS * Suited * F requency R ange DC to * C o m p a c t F o o tp rin t fo r High * Ideal fo r E nerg y S to ra g e A p p lic a tio n s * C usto m