RIC11 Search Results

Contextual Info: STP2210QFP S un M ic r o e l e c t r o n ic s J u ly 1 9 9 7 RIC DATA SHEET Reset/Interrupt/Clock Controller D e s c r ip t io n The STP2210QFP RIC111 supports the system resets, system interrupts, system scan, and system clock-control functions. These are independent blocks, designed onto the ASIC chip to save space and improve reliability

25CL64B-GA

Abstract: 25CL64BGA 25cl64 FM25CL64B-Ga
Contextual Info: AEC Q100 Grade 1 Compliant FM25CL64B – Automotive Temp. 64Kb FRAM Serial 3V Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

RIC1147

Contextual Info: Preliminary FM25LX64 64Kb Serial 1.5V F-RAM Memory FEATURES 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  36 Year Data Retention at +75ºC  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

4A14H

Abstract: SRN8
Contextual Info: User Manual V850E2/ML4 32 User’s Manual: Hardware 32-bit Single-Chip Microcontroller V850E2/Mx4 microcontrollers PD70F4021 μ PD70F4022 All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

PD70F35

Abstract: R01US0001EJ v850E2M architecture Users Manual SUS 303 EZ CG 555 timer guard ring TT 2188 v850e2m NAS11 TAPA2 B32R
Contextual Info: User Manual V850E2/MN4 32 RENESAS MCU V850E2/Mx4 microcontrollers PD70F3510 μPD70F3512 μPD70F3514 μPD70F3515 All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

25CL64B-GA

Contextual Info: AEC Q100 Grade 1 Compliant FM25CL64B – Automotive Temp. 64Kb FRAM Serial 3V Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

uPD70F3548

Abstract: uPD70F3554 uPD70F3558 uPD70F3550 uPD70F4002 v850e2 Fx4 uPD70F3551 uPD70F35 uPD70f4010 V850E2 FK4
Contextual Info: User Manual 32 Preliminary Document V850E2/Fx4 32-bit Microcontroller V850E2/FG4 V850E2/FJ4 V850E2/FK4 V850E2/FL4 µPD70F3548 µPD70F3549 µPD70F3550 µPD70F3551 µPD70F3552 µPD70F3553 µPD70F3554 µPD70F3555 µPD70F3556 µPD70F3557 µPD70F3558 µPD70F3559

25CL64B-GA

Contextual Info: AEC Q100 Grade 1 Compliant FM25CL64B – Automotive Temp. 64Kb Serial 3V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary AEC Q100 Grade 1 Compliant FM25L04B – Automotive Temp. 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 10 Trillion 1013 Read/Writes • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

AL3502G1

Abstract: AEC-Q100-003
Contextual Info: Preliminary AEC Q100 Grade 1 Compliant FM25640B – Automotive Temp. 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 10 Trillion 1013 Read/Writes • NoDelay Writes • Advanced high-reliability ferroelectric process

Contextual Info: Preliminary AEC Q100 Grade 1 Compliant FM25040B – Automotive Temp. 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 10 Trillion 1013 Read/Writes • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary AEC Q100 Grade 1 Compliant FM25640B – Automotive Temp. 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 10 Trillion 1013 Read/Writes • NoDelay Writes • Advanced high-reliability ferroelectric process

FM25C160B-G

Abstract: 25C160BGA
Contextual Info: Preliminary AEC Q100 Grade 1 Compliant FM25C160B – Automotive Temp. 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 10 Trillion 1013 Read/Writes • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: AEC Q100 Grade 1 Compliant FM25C160B – Automotive Temp. 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25V20 2Mb Serial 3V F-RAM Memory Features 2M bit Ferroelectric Nonvolatile RAM • Organized as 256K x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: AEC Q100 Grade 1 Compliant FM25640B – Automotive Temp. 64Kb Serial 3V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced high-reliability ferroelectric process

Contextual Info: AEC Q100 Grade 1 Compliant FM25L04B – Automotive Temp. 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM25040B

Contextual Info: AEC Q100 Grade 1 Compliant FM25040B – Automotive Temp. 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM25CL64B

Contextual Info: Preliminary AEC Q100 Grade 1 Compliant FM25CL64B – Automotive Temp. 64Kb FRAM Serial 3V Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 10 Trillion 1013 Read/Writes • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25640B

Contextual Info: AEC Q100 Grade 1 Compliant FM25640B – Automotive Temp. 64Kb Serial 5V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced high-reliability ferroelectric process

fm25v20

Abstract: FM25V20-G RG5V20
Contextual Info: FM25V20 2Mb Serial 3V F-RAM Memory Features 2M bit Ferroelectric Nonvolatile RAM • Organized as 256K x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FGH40N60

Abstract: FAN9673Q inverter 12v to 220 ac mosfet based
Contextual Info: FAN9673 Three-Channel Interleaved CCM PFC Controller Features Description • •    Continuous Conduction Mode Control    Programmable PFC Output Voltage The FAN9673 is an interleaved three-channel Continuous Conduction Mode CCM Power Factor

24CL64BGA

Abstract: 24cl64
Contextual Info: AEC Q100 Grade 1 Compliant FM24CL64B - Automotive Temp. 64Kb Serial 3V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM Organized as 8192 x 8 bits High Endurance 10 Trillion 1013 Read/Writes NoDelay Writes Advanced High-Reliability Ferroelectric Process

FM25040BGA

Contextual Info: AEC Q100 Grade 1 Compliant FM25040B – Automotive Temp. 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced High-Reliability Ferroelectric Process