RIA Q20 Search Results

AB-0013

Abstract: bss138zx
Contextual Info: fej b e n c h m a r q _ Using the bq2010 A Tutorial for Gas Gauging Introduction T h is tu to ria l in tro d u c e s th e bq2010 G as G auge IC second ary b a tte ry av ailab le ch arg e m onitor . T he tutorial is intended to be used w ith th e bq2010 d a ta

20-PIN

Abstract: M74LS95BP
Contextual Info: MITSUBISHI LSTTLs M74LS95BP 4 -B IT PARALLEL-ACCESS SH IFT REGISTER DESCRIPTION The M 74LS95B P is a s em ic o n d u c to r in teg ra te d c irc u it PIN CONFIGURATION TOP VIEW con tain in g a 4 -b it s erial/p a ralle l in p u t-s e ria l/p a ra lle l o u tp u t

Contextual Info: <>y f THERM OTAB T O -2 2 0 A B Is o la te d QUADRACs Internally Triggered Triacs ( 4 - 1 5 Amps) General Description V a ria tio n s o f d e v ic e s in th is d a ta s h e e t a re a v a ila b le fo r c u s to m d e s ig n a p p lic a tio n s . P le a se c o n s u lt th e fa c to ry fo r m ore in fo rm a ­

Contextual Info: resistors R X A isolated resistor networks EU features • • • • dimensions and construction Q20 Dimensions inches (mm) L W p .193 .236 .025 (4.90) (5.99) (0.635) .341 .236 .025 (8.66) (5.99) (0.635) Q24 .341 (8.66) .236 (5.99) .025 (0.635) Q28 .39 (9.9)

RIA Q20

Contextual Info: resistors R X A isolated resistor networks EU features • • • • dimensions and construction Dimensions inches (mm) L W p .193 .236 .025 (4.90) (5.99) (0.635) .341 .236 .025 (8.66) (5.99) (0.635) Size Code Q16 L Bonding Wire Q20 Q24 .341 (8.66) .236

Contextual Info: R X A resistors isolated resistor networks EU features • • • • Thin film on silicon Electrical and mechanical stability High integration (up to 12 terminating lines per package) Products with lead-free terminations meet EU RoHS and China RoHS requirements

rba q16

Abstract: rza series
Contextual Info: resistors R X A isolated resistor networks EU features • • • • Thin film on silicon Electrical and mechanical stability High integration Products with lead-free terminations meet EU RoHS and China RoHS requirements applications • Series termination

RIA Q16

Abstract: RIA N08
Contextual Info: R X A resistors isolated resistor networks features • Thin film on silicon • Electrical and mechanical stability • High integration (up to 12 terminating lines per package) applications • Series termination • Pull-up/pull-down • Current limiting

W16 sot 23

Abstract: rza series 51 ria 40 rba sot 23 sot 23 W16 Q-16
Contextual Info: R X A resistors isolated resistor networks features • • • • Thin film on silicon Electrical and mechanical stability High integration (up to 12 terminating lines per package) Products with lead-free terminations meet RoHS requirements applications

RIA Q16

Contextual Info: R X A resistors isolated resistor networks features • • • • Thin film on silicon Electrical and mechanical stability High integration (up to 12 terminating lines per package) Products with lead-free terminations meet RoHS requirements applications

Contextual Info: R X A resistors isolated resistor networks features • Thin film on silicon • Electrical and mechanical stability • High integration (up to 12 terminating lines per package) applications • Series termination • Pull-up/pull-down • Current limiting

rza series

Abstract: appendix T16 KOA A-1002B RIA Q16
Contextual Info: 1733 Reader's Spreads pg1-203:document 1/27/09 4:07 PM Page 80 R X A resistors isolated resistor networks EU features • • • • Thin film on silicon Electrical and mechanical stability High integration Products with lead-free terminations meet EU RoHS

RIA N08

Abstract: 1M resistor frequency appendix T16 KOA w16 sot23 RIA Q20 ria n16
Contextual Info: isolated resistor networks KOA’s thin film termination networks provide the ideal solution for demanding high speed/high frequency data applications. Compared to thick film networks these thin film components improve performance, while saving space and reducing costs. Sophisticated semiconductor processing

Contextual Info: R X A resistors isolated resistor networks features • Thin film on silicon • Electrical and mechanical stability • High integration (up to 12 terminating lines per package) applications • Series termination • Pull-up/pull-down • Current limiting

DNA 1002

Abstract: rnx w16 dn5 marking packaging resistor MARKING W16 SOT23 rnx Q24 DN6 marking diode
Contextual Info: NETWORKS TECHNOLOGY OF TOMORROW RESISTORS / CAPACITORS / DIODES 3 2 THIN FILM ON SILICON TFOS INTEGRATED PASSIVE COMPONENTS KPC STRUCTURE 1 1 2 3 4 5 6 7 Die pad Silicon substrate Circuit Bonding pad Lead Mold resin Gold wire bonding 6 5 NETWORKS (PASSIVE COMPONENTS)

Contextual Info: NETWORKS KOA´S INTEGRATED PASSIVE COMPONENTS 3 THIN FILM ON SILICON TFOS KPC STRUCTURE 2 1 1 2 3 4 5 6 7 Die pad Silicon substrate Circuit Bonding pad Lead Mold resin Gold wire bonding 6 4 IDENTIFICATION Specifications given herein may be changed at any time without prior notice.

rnx Q24

Contextual Info: RB X , RD(X), RT(X), RNX resistors integrated passive components EU features • Thin film (metal film) resistor array on silicon wafer • Excellent resistance matching, TCR tracking and stabilities • Custom circuits are available with flexible layout (Different

Contextual Info: RB X , RD(X), RT(X), RNX resistors integrated passive components EU features • Thin film (metal film) resistor array on silicon wafer • Excellent resistance matching, TCR tracking and stabilities • Custom circuits are available with flexible layout (Different

rnx w16

Abstract: 471j CAPACITOR w16 sot23 511j CAPACITOR KPC T16 12w SOT23-3 appendix T16 KOA KPC appendix KOA KPC T16
Contextual Info: 抵抗器 Resistors R/C NETWORKS KPC 表面実装形薄膜抵抗/コンデンサネットワーク KOA’s Integrated Passive Components •構造図 Construction ② ① ③ ① シリコンウェハ Si wafer ② ボンディングワイヤ Bonding wire

Contextual Info: IBM13T4644MPE IBM13T4644MPD One Bank 4M x 64 SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 4Mx64 Synchronous DRAM SO DIMM • Performance: -10 C A S L a te n cy 100 j f(;i< | C lo c k F re q u e n c y

rnx w16

Contextual Info: KOA THIN FILM KOA's Integrated Passive Components SPEER ELECTRONICS, INC. General Description & Background Information These thin film passive components are designed for EMI/RFI filtering and impedance matching applications. The integrated passive components are produced using a silicon based technology that

DNA 1002

Abstract: TE-5001 n014 jis c 5201-1 511j MARKING T20 SOT23 471j CAPACITOR 470M 471J diodes tvb
Contextual Info: NETWORKS Resistors / capacitors / diodes 3 2 THIN FILM ON SILICON TFOS INTEGRATED PASSIVE COMPONENTS KPC 1 STRUCTURE 1 2 3 4 5 6 7 Die pad Silicon substrate Circuit Bonding pad Lead Mold resin Gold wire bonding 6 4 IDENTIFICATION TYPE COATING COLOR MARKING

Contextual Info: I t C i Solid State l CD4521B Types r a CMOS Logic ICs CMOS 24-Stage Frequency Divider High-Voltage Types 20-Volt Rating Features: • Reset disables the RC o s c illa to r fo r lo w p o w e r sta n d b y c o n d itio n ■ V d d ' a nd U'ss' p in s are b ro u g h t o u t fro m

Contextual Info: MV4330/MV4332 O _ ADVANCE INFORMATION C M O S A dvance in fo rm a tio n is issued to advise C u stom ers o f new a d d itio n s to th e Plessey S e m ic o n d u c to rs range w h ich, nevertheless, s till have *p re -p ro d u c tio n ’ s ta tu s . D e ta ils given may, th e re fo re , c han ge w ith o u t n o tic e a lth o u g h we w o u ld expe ct th is perfo rm a n c e data to