RG4A Search Results

DIODE RG4A

Abstract: RG4A rg4a diode
Contextual Info: RG4A / B / D / G / J VISHAY Vishay Semiconductors Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Fast switching for high efficiency • 3.0 ampere operation at Tamb = 50 °C with no thermal runaway

Contextual Info: RG4A THRU RG4J GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Amperes * FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Capable of meeting environmental standards of

BYT56A

Abstract: BYT56B BYT56D BYT56G BYT56J BYT56K BYT56M BYW72 BYW73 BYW74
Contextual Info: Fast Recovery Sinterglass Rectifiers Part No. CrossReference Max. Average Rectified Current lo A RG4A RG4B RG4D RG4G RG4J BYT56A BYT56B BYT56D BYT56G BYT56J BYT56K BYT56M BYW72 BYW73 BYW74 BYW75 BYW76 BYT77 BYT78 1N5415 1N5416 1N5417 1N5418 1N5420 Peak Fwd. Surge

Contextual Info: RG4A THRU RG4J GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current -3.0 Amperes_ FEATURES ♦ High temperature metallurgical^ bonded construction ♦ Glass passivated cavity-free junction ♦ Capable of meeting environmental standards of

1B046

Abstract: voltage t
Contextual Info: RG4A THRU RG4J GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER Voltage - 50 to 600 Volts Current - 3.0 Amperes FEATURES ♦ High temperature metallurgically bonded constructed rectifiers ♦ Glass passivated cavity-free junction

RG4M

Abstract: RG4K
Contextual Info: RG4A THRU RG4M FAST SWITCHING GLASS PASSIVATED SILICON RECTIFIER Voltage - 50 to 1000 Volts Current- 3.0 Amperes FEATURES ♦ High temperature metallurgical^ bonded constructed rectifiers ♦ Glass passivated cavity-free junction ♦ Capable of meeting environmental standards of

DIODE RG4A

Abstract: rg4a diode
Contextual Info: RG4A to RG4J VISHAY Vishay Semiconductors Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Fast switching for high efficiency • 3.0 ampere operation at Tamb = 50 °C with no thermal runaway

DIODE RG4A

Contextual Info: RG4A / B / D / G / J VISHAY Vishay Semiconductors Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Fast switching for high efficiency • 3.0 ampere operation at Tamb = 50 °C with no thermal runaway

rg4a

Contextual Info: RG4A THRU RG4J GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Amperes * FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Capable of meeting environmental standards of

DIODE RG4A

Contextual Info: RG4A / B / D / G / J VISHAY Vishay Semiconductors Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Fast switching for high efficiency • 3.0 ampere operation at Tamb = 50 °C with no thermal runaway

Contextual Info: RG4A THRU RG4J Glass Passivated Fast Switching Rectifier Case Style G4 0.180 4.6 0.115 (2.9) DIA. 1.0 (25.4) MIN. • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Capable of meeting environmental standards of

DIODE RG4A

Abstract: RG4A
Contextual Info: RG4A ULTRA FAST RECOVERY RECTIFIER DIODE PRV : 600 Volts Io : 1.0 Amperes DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

Contextual Info: RG4A THRU RG4J GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 3 .0 Amperes FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Capable of meeting environmental standards of

MIL-S-19500

Contextual Info: RG4A thru RG4J Vishay Semiconductors formerly General Semiconductor Glass Passivated Fast Switching Rectifier Case Style G4 1.0 25.4 MIN. 0.180 (4.6) 0.115 (2.9) DIA. * d e Features t n e t a P Reverse Voltage 50 to 600V Forward Current 3.0A • High temperature metallurgically bonded construction

rg4m

Contextual Info: 30^0137 0GG4S37 2 « G I C 3flE D 6ENL INSTR/ POWER T-03-15 RG4A THRU RG4M GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER Voltage - 50 to 1000 Volts Current- 3.0 Amperes FEATURES ♦ High temperature metallurgically bonded constructed rectifiers ♦ Glass passivated cavity-free junction

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

byv260

Abstract: W10G MBRB1060 SBLB2030CT SBLB2040CT ug2d 1N8478 KBU8M 514
Contextual Info: NUMERICAL INDEX 1.5KA6.8 thru 1.5KA43A.614 BYM12-50 thru BYM12-400 .77 FES8AT thru FES8JT . 149 1.5KE6.8 thru 1.5KE440CA.564 BYM13-20 thru BYM13-60 .355 BYV260 and BYV26E. 75

5SBA20

Abstract: ZENER b29 B2950 BRF20100C BZY97C11 BRF20100CT BC337 B2060CT BRF1060 General Semiconductor 1N4249
Contextual Info: ALPHANUMERICAL LIST OF ALL GENERAL SEMICONDUCTOR TYPES Note: Listed below are General Sem iconductor's part num bers, along with the Data Book in w hich they appear. For Zener and T V S page references, see the Zener/TVS Device Index on page 5 in th is book.