RG-74 DIODE Search Results

IXFN66N50Q2

Contextual Info: HiPerFETTM Power MOSFET VDSS = 500 V ID25 = 66 A Ω RDS on = 74 mΩ ≤ 250 ns trr IXFN66N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions

EM 5135 diode

Abstract: 458a diode IN461A 1N459 equivalent T219 pn5139 pn5135 FDSOI500 equivalent diode for 1n457 0/EM 5135 diode
Contextual Info: FAIRCHILD SEMICO NDU CTO R 04 DE |34fc.citi74 0 0 H 7 4 S CI 4 3469674 FAIRCHILD SEMICONDUCTOR 84D 2 74 59 D PN5135/FTS05135 T - 2 7 - u PN5136/FTS05136 PN5137/FTS05137 FAIRCHILD A S c h lu m b e rg e r C o m p a n y NPN Small Signal General Purpose Amplifiers

DL038D

Abstract: Scans-048 DL038 138A1 DSAGER00017 TGL DDR
Contextual Info: Vorläufige technische Daten In te rn a tion ale r V e rg le ich sty p : S N 74 L S 38 W 4 NA ND -Leistungsgatter mit offenem Kollektorausgang und je 2 Eingängen in L o w - Power-Schottky-Technologie Y - M jmessunqen in mm 14 13 12 ,j=L_e3L.CX^0 _0 _C1„£X„,

Contextual Info: rg Q uality I mcI uctor, I nc. High-Speed 3.3VCMC6 9_Bt x 4 Ports Multiple Bus Exchange wi th Bus Hoi d and Synchronous/ Asynchronous Controls q s 74 l c x h 9 o i in fo ar dmvAtio n FEATURES/BENEFITS DESCRIPTION • 5V-tolerant inputs and outputs • Bus Hold feature holds last active state during

Contextual Info: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)

Contextual Info: AOK20B60D1 600V, 20A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt

300GB

Contextual Info: SKM 300GB063D power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter  7 4* 8       % ! Absolute Maximum Ratings Symbol Conditions IGBT )' 9 7 4* 8)

Contextual Info: SKM 300GB063D power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter  7 4* 8       % ! Absolute Maximum Ratings Symbol Conditions IGBT )' 9 7 4* 8)

skim250gd128d

Contextual Info: SKiM 250GD128D power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT 1 2 ( (9: 12 < !"    . */ !64" 0(

418AA

Contextual Info: NTP4302, NTB4302 Power MOSFET 74 Amps, 30 Volts N−Channel TO−220 and D2PAK Features • • • • • Low RDS on Higher Efficiency Extending Battery Life Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature

Contextual Info: SK 60 GB 128 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions IGBT '/" '2/"  ): $ % +, -.      

Contextual Info: SK 60 GAL 128 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions IGBT '/" '2/"  ): $ % +, -.      

diode 7449

Abstract: IC 7449 rg 504 diode 11aC126v1
Contextual Info: SKiiP 11AC126V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter ,$3  : ,$3  1 ' 20    

AOK15B60D

Contextual Info: AOK15B60D 600V, 15A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt

semikron skiip 24 nab 125 t 12

Abstract: semikron skiip 81 AN 15 T
Contextual Info: SKiiP 37NAB12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC IC MiniSKiiP 3 ICRM VGES Tj IC • Trench 4 IGBTs • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections

SEMIKRON SKIIP 11NAB126V1

Abstract: IC 7449
Contextual Info: SKiiP 11NAB126V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper ,$3  : ,$3  1 ' 20    

Contextual Info: SKiiP 36NAB126V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper +$3  9 +$3  1 ' 2/    

a1444

Contextual Info: SKiiP 26AC126V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter +$3  9 +$3  1 ' 2/    

55N120AU1

Contextual Info: High Voltage IGBT with Diode IXSN 55N120AU1 VCES IC25 VCE sat = 1200 V = 110 A = 4V 3 2 Preliminary data 4 1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1200 A VGES Continuous ±20 V VGEM

SEMIKRON SKIIP 24NAB126V1

Abstract: SKiiP24NAB126V1 SEMIKRON fb
Contextual Info: SKiiP 24NAB126V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper -$3  : -$3  1 ' 20    

NTB4302

Abstract: NTB4302T4 NTP4302
Contextual Info: NTP4302, NTB4302 Advance Information Power MOSFET 74 Amps, 30 Volts N–Channel TO–220 and D2PAK Features • • • • • http://onsemi.com Low RDS on Higher Efficiency Extending Battery Life Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified

NTB4302

Abstract: NTB4302T4 NTP4302
Contextual Info: NTP4302, NTB4302 Power MOSFET 74 Amps, 30 Volts N−Channel TO−220 and D2PAK Features • • • • • Low RDS on Higher Efficiency Extending Battery Life Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature

74N20P

Abstract: PLUS220SMD
Contextual Info: PolarHTTM HiPerFET IXFH 74N20P IXFV 74N20P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated trr IXFV 74N20PS RDS on Symbol Test Conditions VDSS TJ = 25° C to 175° C 200 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 200

Contextual Info: Preliminary Datasheet RJH60F6BDPQ-A0 600V - 45A - IGBT High Speed Power Switching R07DS0632EJ0100 Rev.1.00 Feb 17, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package