RG 2006 10A 600V Search Results

TA49372

Abstract: 20N60A4 equivalent
Contextual Info: HGT1S20N60A4S9A Data Sheet March 2006 600V, SMPS Series N-Channel IGBTs Features The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

Contextual Info: HGT1S20N60A4S9A Data Sheet March 2006 600V, SMPS Series N-Channel IGBTs Features The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

RG 2006 10A 600V

Abstract: HTP20-600 triac 20a rms triac to220
Contextual Info: HTP20-600 HTP20-600 600V 20A TRIAC VDRM = 600 V IT RMS = 20A FEATURES 2.T2 Symbol ‰ Repetitive Peak Off-State Voltage: 600V ‰ R.M.S On-state Current (IT(RMS)=20A) ‰ High Commutation dv/dt 3.Gate 1.T1 1. T1 2. T2 3. Gate General Description The TRIAC HTP20-600 is suitable for AC switching application, phase

RG 2006 10A 600V

Abstract: GF10NB60SD STGF10NB60SD JESD97 SCHEMATIC igbt dimmer SCHEMATIC dimmer igbt gf10nb60 SCHEMATIC dimmer control
Contextual Info: STGF10NB60SD N-channel 10A - 600V - TO-220FP PowerMESH IGBT General features Type VCES STGF10NB60SD 600V IC VCE sat (Max)@ 25°C @100°C <1.8V 7A • Hight input impedance (voltage driven) ■ Low on-voltage drop ■ High current capability ■ Co-packaged with turboswitch™ antiparallel

P10NC60HD

Abstract: STGB10NC60HD STGP10NC60HD JESD97 p10nc60 B10NC60HD to-247 to-220
Contextual Info: STGB10NC60HD STGP10NC60HD N-CHANNEL 600V - 10A - TO-220 - D2PAK VERY FAST PowerMESH IGBT General features VCE sat IC (Max)@ 25°C @100°C Type VCES STGB10NC60HD 600V < 2.5V 10A STGP10NC60HD 600V < 2.5V 10A 3 3 1 • Lower on-voltage drop (Vcesat) ■ Lower CRES / CIES ratio (no cross-conduction

gp10nc60hd

Abstract: gp10nc60 GB10NC60HD STGP10NC60HD
Contextual Info: STGB10NC60HD STGP10NC60HD N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH IGBT General features IC VCE sat (Max)@ 25°C @100°C Type VCES STGB10NC60HD 600V < 2.5V 10A STGP10NC60HD 600V < 2.5V 10A • ■ ■ Low on-voltage drop (Vcesat) 3 3 1

p10nk60

Abstract: p10nk60z p10nk60zfp B10n STP10NK60ZFP
Contextual Info: STB10NK60Z/-1- STP10NK60Z STP10NK60ZFP - STW10NK60Z N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS @T jMax RDS on ID Pw STB10NK60Z-1 650V <0.75Ω 10A 115W STB10NK60Z 650V

p10nk60

Abstract: p10nk60zfp VDD-300 STP10NK60ZFP B10NK B10n W10NK60Z B10NK60Z p10nk STB10NK60Z
Contextual Info: STB10NK60Z/-1- STP10NK60Z STP10NK60ZFP - STW10NK60Z N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS @TjMax RDS on ID Pw STB10NK60Z-1 650V <0.75Ω 10A 115W STB10NK60Z 650V

f11nm60

Abstract: F11NM60N p11nm60n STD11NM60N STD11NM60N-1 p11nm60 JESD97 STF11NM60N STP11NM60N
Contextual Info: STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 2 1 3 STD11NM60N 650V <0.45Ω 10A STD11NM60N-1 650V

B20NM60D

Abstract: JESD97 STB20NM60D
Contextual Info: STB20NM60D N-channel 600V - 0.26Ω - 20A - D2PAK FDmesh Power MOSFET General features Type VDSS RDS on ID Pw STB20NM60D 600V <0.29Ω 20A 45W • High dv/dt and avalanche capabilities ■ 100% Avalanche tested ■ Low input capacitance and gate charge

F11NM60N

Abstract: f11nm60 p11nm60 JESD97 STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N f11n
Contextual Info: STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 2 1 3 STD11NM60N 650V <0.45Ω 10A STD11NM60N-1 650V

GP10NC60KD

Abstract: gb10nc60kd JESD97 STGB10NC60K STGB10NC60KDT4 STGP10NC60K STGP10NC60KD
Contextual Info: STGB10NC60K STGP10NC60K N-channel 600V - 10A - D2PAK / TO-220 Short circuit rated PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGB10NC60K STGP10NC60K 600V 600V <2.5V <2.5V 10A 10A • Lower on voltage drop (Vcesat) ■ Lower CRES / CIES ratio (no cross-conduction

GP10NC60H

Abstract: JESD97 STGP10NC60H RG 2006 10A 600V
Contextual Info: STGP10NC60H N-channel 10A - 600V - TO-220 Very fast PowerMESH IGBT General features Type VCES STGP10NC60H 600V IC VCE sat (Max)@ 25°C @100°C < 2.5V 10A • Low on-voltage drop (Vcesat) ■ Low CRES / CIES ratio (no cross-conduction susceptbility) ■

GW30NC60WD

Abstract: stgw30nc60wd IGBT STGW30NC60WD schematic diagram UPS inverter JESD97
Contextual Info: STGW30NC60WD N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGW30NC60WD 600V < 2.5V 30A • High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility)

w20nm60

Abstract: w20nm60fd P20NM60FD STF20NM60D F20NM60D STP20NM60FD STW20NM60FD p20nm60 mosfet 600V 100A ST
Contextual Info: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD

RG 2006 10A 600V

Contextual Info: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD

W20NM60

Abstract: STF20NM60FD w20nm60fd P20NM60FD p20nm60 p20nm60f mosfet 600V 100A ST stp20nm60fd
Contextual Info: STF20NM60FD - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60FD 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD

GP10NC60KD

Abstract: STGP10NC60KD gf10nc60kd RG 2006 10A 600V GF10N ST IGBT code marking STGF10NC60KD gp10nc60
Contextual Info: STGB10NC60KD STGF10NC60KD - STGP10NC60KD N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGB10NC60KD STGP10NC60KD STGF10NC60KD 600V 600V 600V <2.5V <2.5V <2.5V

30V 20A power p MOSFET

Abstract: FCB20N60F FCB20N60FTM
Contextual Info: TM SuperFET FCB20N60F 600V N-CHANNEL FRFET Features Description • 650V @ TJ = 150°C SuperFETTM is,Farichild’ s proprietary,new generation ofhigh voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

fca20n60

Abstract: N-Channel mosfet 600v ir 600V 20A N-Channel MOSFET TO-3P
Contextual Info: SuperFET TM FCH20N60 / FCA20N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

N-Channel mosfet 600v ir

Abstract: FCA20N60 RG 2006 10A 600V F109 FCH20N60 N-Channel mosfet 600v 20A 600V 20A N-Channel MOSFET TO-3P
Contextual Info: SuperFET TM FCH20N60 / FCA20N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

APT0406

Abstract: APT0501 APT0502 APTM100H45SCTG
Contextual Info: APTM100H45SCTG Full bridge Series & SiC parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS CR1A CR3A CR3B Q3 G3 G1 OUT1 OUT2 CR2A Q2 S3 CR4A CR2B CR4B Q4 G2 G4 S2 S4 0/VBUS

Contextual Info: APTM100H45SCTG Full bridge Series & SiC parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS CR1A CR3A CR3B Q3 G3 G1 OUT1 OUT2 CR2A Q2 S3 CR4A CR2B CR4B G2 G4 S2 S4 0/VBUS

600v 10A ultra fast recovery diode

Abstract: FCB20N60F mosfet 10a 600v 10a 400V ultra fast diode d2pak N-Channel mosfet 600v 20A FCB20N60FTM
Contextual Info: SuperFET FCB20N60F TM 600V N-CHANNEL FRFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and