F11N Search Results

f11nm80

Abstract: p11nm80 W11nm80 ST 9241 9241 B11nm80 marking code STB S 9241 STP11NM80 STB11NM80
Contextual Info: STB11NM80, F11NM80 STP11NM80, STW11NM80 N-channel 800 V, 0.35 Ω, 11 A MDmesh Power MOSFET TO-220, TO-220FP, D2PAK, TO-247 Features Type VDSS RDS on max RDS(on)*Qg ID 3 STB11NM80 1 3 2 D²PAK 1 F11NM80 800 V STP11NM80 < 0.40 Ω 14Ω*nC TO-247 11 A

STF11NM65

Abstract: p11nm6
Contextual Info: STB11NM65N-1 - F11NM65N STP11NM65N - STW11NM65N N-channel 650V - 0.33Ω - 12A - TO-220/FP- I2PAK - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID STB11NM65N-1 710V < 0.38Ω 12A F11NM65N 710V < 0.38Ω 12A(1) STP11NM65N

F11NM80

Abstract: p11nm80 3L4-9 B11NM80 STF11NM80 W11nm80 STW11NM80 STB11NM80 STP11NM80 STB11NM80T4
Contextual Info: STP11NM80 - F11NM80 STB11NM80 - STW11NM80 N-CHANNEL 800V - 0.35 Ω - 11 A TO-220 /FP/D2PAK/TO-247 MDmesh MOSFET Table 1: General Features TYPE STP11NM80 F11NM80 STB11NM80 STW11NM80 • ■ ■ ■ Figure 1: Package VDSS RDS on 800 800 800 800 < <

f11nm60n

Abstract: STB11NM60N-1 STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N f11nm60
Contextual Info: STD11NM60N-1 - STB11NM60N-1 STD11NM60N-STP11NM60N-F11NM60N N-channel 600V - 0.37Ω - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh Power MOSFET Features VDSS @TJmax RDS(on) STB11NM60N-1 650 V < 0.45 Ω 10 A STD11NM60N 650 V < 0.45 Ω 10 A

p11nm80

Abstract: f11nm80 B11nm80 STP11NM80 W11nm80 STF11NM80 STW11NM80
Contextual Info: STP11NM80 - F11NM80 STB11NM80 - STW11NM80 N-CHANNEL 800V - 0.35 Ω - 11 A TO-220 /FP/D2PAK/TO-247 MDmesh MOSFET Table 1: General Features TYPE STP11NM80 F11NM80 STB11NM80 STW11NM80 • ■ ■ ■ Figure 1: Package VDSS RDS on 800 800 800 800 < <

F11NM60N

Abstract: f11nm60 p11nm60 JESD97 STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N f11n
Contextual Info: STD11NM60N - STD11NM60N-1 STP11NM60N - F11NM60N N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 2 1 3 STD11NM60N 650V <0.45Ω 10A STD11NM60N-1 650V

digital multimeter DT 832

Abstract: ic str 6454 equivalent
Contextual Info: CHAUVIN ARNOUX 10 SUBSIDIARIES WORLDWIDE Chauvin Arnoux Ges.m.b.H Slamastrasse 29/2/4 1230 WIEN Tel.: +43 1 61 61 9 61 Fax: +43 1 61 61 9 61-61 vie-office@chauvin-arnoux.at www.chauvin-arnoux.at CHINA ENERDIS 16, rue Georges Besse - Silic 44 92182 ANTONY Cedex

C1563

Abstract: 008J 100J "wst" connector 028J 1B005
Contextual Info: 4 3 D R A W I N G M A D E IN THIRD A N G L E P R O J E C T I O N THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL INTERNATIONAL g COPYRIGHT 19 I O LOC ,19 01 ST 54 CM RIGHTS RESERVED. zone RE V IS IO NS Lilt REDRAWN g REV PER ECN CM-11 g

11NM60N

Abstract: f11nm60n STF11NM60N p11nm60 f11nm60 STB11NM60N STB11NM60N-1 STD11NM60N STD11NM60N-1 STP11NM60N
Contextual Info: STD11NM60N-1 - STB11NM60N/-1 STD11NM60N-STP11NM60N-F11NM60N N-channel 600 V - 0.37 Ω - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh Power MOSFET Features Type VDSS @TJmax RDS(on) max ID 650 V 650 V 650 V 650 V 650 V

f11nm60

Abstract: F11NM60N p11nm60n STD11NM60N STD11NM60N-1 p11nm60 JESD97 STF11NM60N STP11NM60N
Contextual Info: STD11NM60N - STD11NM60N-1 STP11NM60N - F11NM60N N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 2 1 3 STD11NM60N 650V <0.45Ω 10A STD11NM60N-1 650V

Contextual Info: 1 1234454678 1 9ABCDEFEE3CFE66E 1 1E31FE7 !11 1EF"F3E!# 1 1 DE41F222117A141451E1 !5"1!!1 E5!#$E1E1%1&'1 !51455451!  1 *1E1 1 &'1 1+41# 4*1!1441(54,#4 1(5!"12888-.1!1728-.61 1

P11NM

Abstract: F11NM80 p11nm80 B11NM80 W11NM80 JESD97 STB11NM80 STF11NM80 STP11NM80 STW11NM80
Contextual Info: STB11NM80 - F11NM80 STP11NM80 - STW11NM80 N-channel 800 V - 0.35 Ω - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh Power MOSFET Features Type VDSS RDS on RDS(on)*Qg ID STB11NM80 800 V < 0.40 Ω 14Ω*nC 11 A F11NM80 800 V < 0.40 Ω 14Ω*nC 11 A STP11NM80

f11nm80

Abstract: p11nm80 B11NM80 STP11NM80 W11NM80 f11n STB11NM80 STB11NM80T4 STF11NM80 STW11NM80
Contextual Info: STP11NM80 - STB11NM80 F11NM80 - STW11NM80 N-CHANNEL 800V - 0.35Ω - 11A TO-220/FP/D2PAK/TO-247 MDmesh Power MOSFET TARGET DATA TYPE STP11NM80 F11NM80 STB11NM80 STW11NM80 VDSS RDS on Rds(on)*Qg 800 800 800 800 < 0.40 Ω < 0.40 Ω < 0.40 Ω < 0.40 Ω

W11nm80

Abstract: ST 9241 p11nm80 f11nm80 9241 P11NM ISD11 STF11NM80 stw11nm80 B11nm80
Contextual Info: STB11NM80, F11NM80 STI11NM80, STP11NM80, STW11NM80 N-channel 800 V, 0.35 Ω, 11 A MDmesh Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247 Features Order codes VDSS RDS on max RDS(on)*Qg ID 3 3 1 STB11NM80 1 D²PAK F11NM80 STI11NM80 800 V < 0.40 Ω

11NM60N

Contextual Info: STx11NM60N N-channel 600 V, 0.37 Ω, 10 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features Type VDSS @TJmax RDS(on) max ID 650 V 650 V 650 V 650 V 650 V 650 V 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 10 A 10 A 10 A

11NM60N

Abstract: f11nm60n p11nm60 f11nm60 STB11NM60N STB11NM60N-1 STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N
Contextual Info: STx11NM60N N-channel 600 V, 0.37 Ω, 10 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features Type VDSS @TJmax RDS(on) max ID 650 V 650 V 650 V 650 V 650 V 650 V 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 10 A 10 A 10 A

F11NM80

Abstract: p11nm80 GS 393
Contextual Info: STB11NM80 - F11NM80 STP11NM80 - STW11NM80 N-channel 800V - 0.35Ω - 11A - TO-220 /FP- D2PAK - TO-247 MDmesh Power MOSFET General features Type VDSS RDS on RDS(on)*Q g ID STB11NM80 800V < 0.40Ω 14Ω*nC 11A F11NM80 800V < 0.40Ω 14Ω*nC 11A STP11NM80

f11nm80

Abstract: STF11NM80 800v mosfet p11nm80 w11nm80 STP11NM80 B11NM80 STB11NM80 st 393 JESD97
Contextual Info: STB11NM80 - F11NM80 STP11NM80 - STW11NM80 N-channel 800V - 0.35Ω - 11A - TO-220/FP- D2PAK - TO-247 MDmesh Power MOSFET General features Type VDSS RDS on RDS(on)*Qg ID STB11NM80 800V < 0.40Ω 14Ω*nC 11A F11NM80 800V < 0.40Ω 14Ω*nC 11A STP11NM80