RFMD MODEL MARKING CODE Search Results

A11Z

Abstract: trace code marking RFMD SGA-1163Z marking 478 mmic sga1163z SGA-1163 MARKING CODE a11 sot363 DS090924 sga-3463 z MARKING RFMD
Contextual Info: SGA-1163 Z SGA-1163(Z) DC to 6000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 6000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER NOT FOR NEW DESIGNS Package: SOT-363 Product Description Features Gain & Return Loss vs. Frequency 16 InGaP HBT GAIN 12 GaAs pHEMT -10

Contextual Info: SGA-1163 Z SGA-1163(Z) DC to 6000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 6000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER NOT FOR NEW DESIGNS Package: SOT-363 Product Description Features Gain & Return Loss vs. Frequency 16 InGaP HBT GAIN 12 GaAs pHEMT -10

trace code marking RFMD

Abstract: BB2Z SBB-2089Z MARKING RFMD SBB2089Z Package Marking BB2Z SBB-2089 rfmd model marking code bb2z marking amplifier rfmd mmic
Contextual Info: SBB-2089Z SBB-2089Z 50 MHz to 850 MHz, Cascadable Active Bias InGaP HBT MMIC Amplifier 50 MHz to 850 MHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBB-2089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active

trace code marking RFMD

Abstract: SBB-2089 SBB2089Z SBB-2089Z SBB2089 rfmd mmic MARKING RFMD bb2z marking amplifier mmic marking bb2z
Contextual Info: SBB-2089Z SBB-2089Z 50 MHz to 850 MHz, Cascadable Active Bias InGaP HBT MMIC Amplifier 50 MHz to 850 MHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBB-2089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active

trace code marking RFMD

Abstract: MARKING RFMD BB1Z SBB-1089Z RF Amplifier marking 420 Package Marking. BB1Z SBB-1089
Contextual Info: SBB-1089Z SBB-1089Z 50 MHz to 850 MHz, Cascadable Active Bias InGaP HBT MMIC Amplifier 50 MHz to 850 MHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBB-1089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active

FPD7612P70

Abstract: PHEMT marking code a HEMT marking P InP transistor HEMT MIL-HDBK-263 Gan hemt transistor RFMD rfmd model marking code
Contextual Info: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT RoHS Compliant Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.

rfmd model marking code

Abstract: marking C43 trace code marking SGC
Contextual Info: SGC-4363Z SGC-4363Z 50MHz to 4000MHz Active Bias Silicon Germanium Cascadable Gain Block 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free Package: SOT-363 Product Description Features RFMD’s SGC-4363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The

140C

Abstract: SGA-8543Z marking code 85Z DS1030 HEMT marking P
Contextual Info: SGA-8543Z High IP3, Medium Power Discrete SiGe Transistor SGA-8543Z Preliminary HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free Product Description Features RFMD’s SGA-8543Z is a high performance Silicon Germanium Heterostructure

Contextual Info: RFPA2013 RFPA2013Preliminary GaAs HBT POWER AMPLIFIER 0.5W, 400MHz to 2700MHz  0.5W Output Power P1dB  NF = 3.8dB at 2140MHz  Gain = 15.7dB at 2140MHz  Power-down Capability NC 1 RFIN 2 RFIN 3 NC 4 VREF NC VBIAS 14 13 12 NC BIAS CIRCUIT 11 RFOUT/VCC

GRM155R71C104KA88D

Abstract: Emerson 142-0741-851 murata date code GRM155R71C104KA88D MPSS100-4-C GRM1555C1H330JZ01E panasonic date code 142-0741-851 500R07S1R2 C9-C21 ERJ-2GEJ560
Contextual Info: RFPA2013 RFPA2013Preliminary GaAs HBT POWER AMPLIFIER 0.5W, 400MHz to 2700MHz 0.5W Output Power P1dB  NF = 3.8dB at 2140MHz  Gain = 15.7dB at 2140MHz  Power-down Capability 1 RFIN 2 RFIN 3 NC 4    VREF NC VBIAS 12 NC BIAS CIRCUIT 11 RFOUT/VCC

SGC-4363Z

Abstract: bias tee
Contextual Info: SGC-4363Z SGC-4363Z 50MHz to 4000MHz Active Bias Silicon Germanium Cascadable Gain Block 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free Package: SOT-363 Product Description Features RFMD’s SGC-4363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The

SBB1089ZSQ

Abstract: SBB-1089 Package Marking. BB1Z
Contextual Info: SBB1089Z SBB1089Z 50MHz to 850MHz, Cascadable Active Bias InGaP HBT MMIC Amplifier 50MHz to 850MHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBB1089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active

FPD7612P70

Abstract: 0805-X7R HEMT marking P 1005FHL InP HBT transistor low noise pseudomorphic HEMT rogers 4003 InP transistor HEMT DS090629 ATC0805X7R
Contextual Info: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.

SGA8543Z-EVB2

Abstract: marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P
Contextual Info: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The

MPSS100-4-C

Abstract: panasonic MSL level rfmd model marking code RFMD PA LTE
Contextual Info: RFPA2013 RFPA2013Preliminary GaAs HBT POWER AMPLIFIER 0.5W, 400MHz to 2700MHz NC VREF NC VBIAS Package: QFN, 16-Pin, 3mmx3mm 16 15 14 13 Features NF=3.8dB at 2140MHz  Gain=15.7dB at 2140MHz  Power-down Capability Applications     2 RFIN 3

Contextual Info: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The

trace code marking RFMD

Abstract: SGC-4363Z RFmd marking sot 363
Contextual Info: SGC4363Z SGC4363Z 50MHz to 4000MHz Active Bias Silicon Germanium Cascadable Gain Block 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGC4363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The

SBB-2089

Abstract: SBB2089Z
Contextual Info: SBB2089Z SBB2089Z 50MHz to 850MHz, Cascadable Active Bias InGaP HBT MMIC Amplifier 50MHz to 850MHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBB2089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active

MPSS100-4-C

Abstract: ITW Pancon
Contextual Info: RFPA2013 RFPA2013Preliminary GaAs HBT POWER AMPLIFIER 0.5W, 400MHz to 2700MHz Features  -60dBc ACPR at 15.5dBm WCDMA 0.5W Output Power P1dB  NF = 3.8dB at 2140MHz  Gain = 15.7dB at 2140MHz  Power-Down Capability 1 RFIN 2 RFIN 3 NC 4 VREF NC VBIAS

Contextual Info: RFPA2189 RFPA2189 GaAs HBT Power Amplifier 0.5W, 400MHz to 2700MHz GaAs HBT POWER AMPLIFIER 0.5W, 400MHz to 2700MHz Package: SOT-89 GND 4 Features  -60dBc ACPR at 16dBm WCDMA  0.5W Output Power P1dB  Excellent Linearity to DC Power Ratio  NF=3.0dB at 880MHz

ERJ-2RKF7500X

Abstract: RFPA2189 MARKING RM* dbm sot89 ERJ-2GEJ392
Contextual Info: RFPA2189 RFPA2189 GaAs HBT Power Amplifier 0.5W, 400MHz to 2700MHz GaAs HBT POWER AMPLIFIER 0.5W, 400MHz to 2700MHz Package: SOT-89 GND 4 Features  -60dBc ACPR at 16dBm WCDMA  0.5W Output Power P1dB  Excellent Linearity to DC Power Ratio  NF=3.0dB at 880MHz

SGL0363Z

Abstract: trace code marking RFMD SGL-0363Z S218 device marking sgl IrL 1540 N DS091103 rfmd model marking code trace code marking RFMD SGL0363Z
Contextual Info: SGL-0363Z SGL-0363Z 5MHz to 2000MHz Low Noise Amplifier Silicon Germanium 5MHz to 2000MHz LOW NOISE AMPLIFIER SILICON GERMANIUM RFMD Green, RoHS Compliant, Pb-Free Package: SOT-363 Product Description Features RFMD’s SGL-0363Z is a low power, low noise amplifier. It is designed for

spf-5043

Abstract: MARKING SPF5043Z spf-5043z SPF5043 spf5043z TAJB104KLRF SPF5043ZPCK1 SPF5043ZSR spf5043zsq
Contextual Info: SPF5043Z SPF5043Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Features The SPF5043Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF5043Z offers ultra-low noise figure and high linearity

Contextual Info: RFPA2189 RFPA2189 GaAs HBT POWER AMPLIFIER 0.5W, 400MHz to 2700MHz Package: SOT-89 GND 4 Features  -60dBc ACPR at 16dBm WCDMA  0.5W Output Power P1dB  Excellent Linearity to DC Power Ratio  NF=3.0dB at 880MHz  Single-Supply 5V Operation 