RFII Search Results

solitron transistors

Abstract: Solitron Devices SOLITRON SDT702 SDT704 1400v npn
Contextual Info: n yg-rfiifif-urrf SOLITRON DEVICES INC S O LIT R O N , D E q C E S J N C _ _ 8 3 6 8 6 0 2 DE~| fl3bflti05 000Gti53 S | ~ 61C 0 0 6 2 3 D POWER TRANSISTORS SDT702 SDT704 r - j 3 -// NPN SILICON POWER TRANSISTORS HIGH VOLTAGE 3 AMPERES FEATURES P L A N A R C O N S T R U C T IO N

Contextual Info: m A M X 2 3 C 2 1O O MACRONIX. INC. 2 M - B I T 2 5 6 K x C M 8 O / 1 S M S 8 K A S K x 1 6 1 R O M FEATURES Completely TTL compatible Operating current: 60mA Standby current: 100|iA Package - 40 pin DIP(600 rfiil • Switchable organization - 256K x 8(byte mode)

2SC3415

Contextual Info: 2SC3415 /Transistors E . M & W l7 ° l'— } - M N P N '> > ;= !> b - 7 > v Z $ 2SC3415 Triple Diffused Planar NPN Silicon Transistor ra iiJ E iflS ffl/H ig h Voltage Amp. • rfiiia /D im e n s io n s U n it: mm 1) dsiiS'fliT & -So BVc e o = 300V 3) Wfcffcfi#

A10077

Contextual Info: 8 6 THIS DRAWING IS UNPUBLISHED. ia RFIIffaSffTTD FR39R FTOmiOIBSOGN BY TYCO elzc W o AKS 7^9- LOC ALL RIGHTS RESERVED. DIST AD REVISIONS 00 LTR DESCRIPTION H H O U S IN G M A TE R IA L: COLOR: NATURAL, CONTACT D 3 2 .0 0 i n M /i n /i i n fwi n zw n f F 7-

507-190

Contextual Info: MIL-DTL-83513 Micro-D 507-190 EMI-RFII Crimp-Ring Micro-D Backshell Assembly 507 T 190 M 15 B Product Series Jackscrew Option Table II Cable Entry Style T = Top S = 90° E = 45° Shell Size (Table I) Finish (Table III) Basic Number Style T -Top Entry R Style E - 45° Entry

71RF

Contextual Info: T O SH IB A TC7SZ125F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Tr7<;71?RF Tr7<i71?RFII * • mt r h t m g m m « p h t ■ BUS BUFFER 3-STATE OUTPUT FEATURES ± 24 mA Typ. High Output Drive (VCC = 3 V) Super High Speed Operation tpD = 2.6 ns (Typ.)

PS-71796-002

Contextual Info: 71796 M A T E R IA L NO. 71796-0009 DIM "P" 2 5 4 + 0 . 25 / - 0 . 1 3 / - P ACKAG IN G CON FIG UR AT ION + 0.0098, -0 .0 05 1 T R A Y PACKED PE R P K - 7 0 8 7 3 - 6 4 3 9.3g [0.3662 r p E lïïE E f m n n rfiir TW T M enji 1) MATERIALS: HOUSING: HIGH TEMPERATURE THERMOPLASTIC, GLASS FILLED, 94V-0

Contextual Info: A contact arrangement board drillings 64 solder contacts 31 27 23 19 15 1 7 3 h = solder contact • = kinked solder contact n = position without contact B 2:1 max, 12,8 „ II | w i m i ^m M rfiiA h B 9 | d 3 a 3 a v | II _ 10,5*0,1 8-5.0,1 GO I. csT

Contextual Info: 2SB1316F5 S -7 > y X $ / I ransistors Epitaxial Planar PNP Silicon Transistor Darlington 1 £ l)J S l*iitlffl/L o w Freq. Power Amp. • $ - ') > 1) rfiiEI/Dim ensions (Unit : mm) t ' > ^ 7 h F E * ’ri S '- ' 0 2) # > / * - # < * - K rtM o • Features

Contextual Info: 8 THIS DRAWING IS UNPUBLISHED. ia BY TYCO elzc W o AKS 6 RFIIffaSffTTD FR39R RaimiflffiHOGN 7^9- LOC ALL RIGHTS RESERVED. DIST AD REVISIONS 00 LTR DESCRIPTION A REF- 0 .9 7 + 0.03 -0 .0 0 —D — D njn n il r4n njn njn njn njn njn njn njn njn n n rin ff4n njn ir4n njn ir4n njn ir4n njn fljff -FBI

2N4920

Contextual Info: /IT ^7# SGS-THOMSON Rfiin œi[LI0ra©iB0i 2N4918 2N4919/2N4920 MEDIUM POWER PNP SILICON TRANSISTOR . 2N4918AND2N4920 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N4918, 2N4919 and 2N4920 are silicon epitaxial planar PNP transistors in Jedec SOT-32

Contextual Info: Data Sheet 8 Tippmatic switch 3600 iiiiHligrm 'ii ni I. atiui-nfr (nvitihj Z l -O Rgcher switch with integrated Electronic a-uto 5 hut-off funciitm à Various ih u l-o if de-lays Irange 50seisto42O rfiiniJ ÎD l/l Visual and illuminated Indication of switch position

Contextual Info: 8 6 RFIIffaSffTTD FR39R FTOmiOIBSOGN THIS DRAWING IS UNPUBLISHED. ia 7^9- LOC ALL RIGHTS RESERVED. BY TYCO D IST AD elzc W oA K S REVISIONS 00 LTR DESCRIPTION DATE 20 F E B 0 4 REV PER EC 0S1 2 - 0 4 1 4 - 0 3 A A HOUSING CONTACT MATERIAL: A •DIM A _ D ran rwi nfcn n n nyn nsn nfcn rwi frtn

Contextual Info: 8 THIS DRAWING IS UNPUBLISHED. ia BY TYCO elzc W o AKS 6 RFIIffaSffTTD FR39R FTOmiOIBSOGN 7^9- LOC ALL RIGHTS RESERVED. DIST REVISIONS 00 AD LTR H DIM A A A REF- A + 0 .0 3 0 .9 7 t -0 .0 0 OF — D — fl i Jn I i oL—»— FlJn nJn »Jn i + - bL » t Jn i t Jo I nan ntn n»n •ROW E

2-56 UNC-2A

Abstract: Jackpost H5935-2218551
Contextual Info: MIL-DTL-83513 Micro-D 507-190 EMI-RFII Crimp-Ring Micro-D Backshell Assembly 507 T 190 M 15 B Product Series Jackscrew Option Table II Cable Entry Style T = Top S = 90° E = 45° Shell Size (Table I) Finish (Table III) Basic Number Style T -Top Entry M Style E - 45° Entry

TMM315D

Abstract: TMM315D1 TMM315D-1
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS T M M 3 I 5D TM M 3 I 5D- I 4096 WORD x 1 BIT STATIC RAM N C H A N N E L S IL IC O N G A T E D E P L E T IO N L O A D DESCRIPTION T M M 3 1 5 D /T M M 3 1 5 D -1 are 4 0 9 6 w o rd x 1 b it read w rite m em ories operated w ith 5 V single pow er

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER LDM —4 2 4 5 8 N I 13.00 [0.512: PIN 14 PIN 8 o V, o fp o ooooo ooooo ooooo ooooo ooooo o a o o o o REV. 4.50 [0.177] ELECTRO-OPTICAL CHARACTERISTICS TA=25T PARAMETER MIN PEAK WAVELENGTH 91.44 [3.600] COL REVERSE VOLTAGE

Contextual Info: UNCONTROLLED DOCUMENT 13,00 [0,512] — I PIN 14 4,50 [0.177] PIN 8 o o ooooo ooooo ooooo ooooo ° o è o o oO P IN 1 REV, A B 1 0 6.68 [4 .2 0 0 ] E.C.N. NUMBER AND REVISION COMMENTS 76,20 [3,0001 MIN ¡M? Q 8 K fT i T C f f iT r fT [ CD ^ f r f T fT fT D -î- r r i r

Contextual Info: UNCONTROLLED DOCUMENT REV, PIN 9 PIN 10 A oooooooo oooooooo oooooooo oooooooo PIN 1 PART NUMBER REV. LDM —0 8 4 8 8 M I A E.C.N. NUMBER AND REVISION COMMENTS 03.21.07 ELECTRO-OPTICAL CHARACTERISTICS Ta = 25 T PARAMETER MIN PEAK WAVELENGTH FORWARD VOLTAGE

Contextual Info: UNCONTROLLED DOCUMENT SC : 7.5 PA R T N U M B E R REV. L C M -S 0 4 0 0 4 D S F CHARACTER DETAIL PRELIM INARY IN P / N DIR 3 ,5 3 [0 ,13 9 ] 2 ,78 [0,109: 0,75 [0,030] 0,55 E0.022] 0,50 [0.020] - £ 0,07 [0,003: 4,89 E0.193] CAUTION: STATIC SENSITIVE DEVICE

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER LDM —4 2 6 5 8 N I 13.00 [0.512: PIN 14 PIN 8 o V, o fp o ooooo ooooo ooooo ooooo ooooo o a o o o o REV. 4.50 [0.177] ELECTRO-OPTICAL CHARACTERISTICS TA=25T 121.92 [4.800] PARAMETER PEAK WAVELENGTH FORWARD VOLTAGE REVERSE VOLTAGE

Contextual Info: UNCONTROLLED DOCUMENT 1 2 .0 0 REV. L D S - C D 17 R I - U S B [0 .4 7 2 ] 4 .7 5 [0 .1 8 7 1 P IN & P IN 1 P IN 5 4 7 ,8 0 [1 ,8 8 2 ] 60,20 [2 ,3 7 0 ] 00.60 [0 0 .0 2 4 ] GO PLS . t If = 10mA TYP MAX 4-70 14,0/7.0 16.0/8.Ü 5.0 UNITS nm Vf Vr jjcd TEST CÛND

Contextual Info: UNCONTROLLED DOCUMENT PA R T N U M B E R LDM —4 2 2 5 7 M I 13,00 [0,512] — I P IN 14 P IN 4,50 [0.177] 8 O o ooooo ooooo ooooo ooooo °OÒOOO O P IN 1 P IN ELECTRO-OPTICAL CHARACTERISTICS Ta = 25X 106.68 [4 .20 0 ] 7 6 ,2 0 [3,0001 MIN REVERSE VOLTAGE

Contextual Info: UNCONTROLLED DOCUMENT REV, A PART NUMBER REV. L P B - R 0 1 1 1481 S A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. # 1 1 1 4 9 . DATE 0 1 .2 4 .0 7 R G B LAYO U T - 7 ,5 0 E 0 .2 9 5 ] 10.16 :0 .4 0 0 ] u — I L— NOTES: 2.00 [0 .0 7 9 ] 1. MILKY WHITE H FU SED WINDOW.