RFF321 Search Results
RFF321 Price and Stock
Harris Semiconductor IRFF321Power Field-Effect Transistor, 2.5A I(D), 350V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |
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IRFF321 | 164 | 1 |
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International Rectifier IRFF321Power Field-Effect Transistor, 2.5A I(D), 350V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFF321 | 98 | 1 |
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RFF321 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: h a IRFF320, RFF321, IRFF322, IRFF323 r r i s ” “ ICONDUCTOE 2.0A and 2.5A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.0A and 2.5A, 350V to 400V • High Input Impedance These are N-Channel enhancement mode silicon gate |
OCR Scan |
irff320irff321irff322irff323+3 | |
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Contextual Info: •i 43G5571 O D S m t S MTS ■ 33 HARRIS HAS IR FF320/321/322/323 IRFF320R/321R /322R /323R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package TO-205AF • 2.0A and 2.5A, 350V - 400V • rDS On = 1-8 fi and 2 .5 0 • Single Pulse Avalanche Energy Rated* |
OCR Scan |
43g5571ff320/321/322/323irff320r/321r/322r+6 | |
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Contextual Info: 23 H A R R IS IBFF320/321/322/323 IRFF320R/321R/322R/323R N-Channel Power M O SFETs Avalanche Energy Rated* August 1991 Package F e a tu re s T 0 -2 0 5 A F • 2.0A and 2.5A, 350V - 400V • ros on = 1-80 and 2.5fi • Single Pulse Avalanche Energy Rated* |
OCR Scan |
irff320r/321r/322r/323rff320ff321ff322+4 |