RFD8P Search Results

d8p05

Abstract: RFP8P05 RFD8P05 RFD8P05SM RFD8P05SM9A TB334 23842
Contextual Info: RFD8P05, RFD8P05SM, RFP8P05 Data Sheet July 1999 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs 2384.2 Features • 8A, 50V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,

Contextual Info: P *3 3 S RFD8P06E, RFD8P06ESM, RFP8P06E 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti­

8A60V

Abstract: RFD8P06E RFD8P06ESM RFD8P06ESM9A RFP8P06E TB334 bv254
Contextual Info: RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet January 2002 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

RF1S42N03L

Contextual Info: HARRI S DI S CRE TE P O W E R MOS F E T LINE T O - 2 5 2 PACKAGE STANDARD GATE DEVICES V dss V r DS(ON) 1 (A ) T O -2 5 2 A A CHANNEL 20V 0.0250 20A RFD20N02SM N 50V 0.3000 8A RFD8P05SM P 0.0470 16A RFD16N05SM N 0.100Q 14A RFD14N05SM N 0.1500 15A RFD15P05SM

RFD8P06LESM9A

Abstract: f8p6le Logic Level p-Channel Power MOSFET RFD8P06LE RFD8P06LESM RFP8P06LE KP115 bv164 45e4
Contextual Info: RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet January 2002 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET Features • 8A, 60V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,

D8P05

Abstract: RFD8P05SM RFD8P05 RFD8P05SM9A RFP8P05 TB334
Contextual Info: RFD8P05, RFD8P05SM, RFP8P05 Semiconductor -8A, -50V, 0.300 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -8A, -50V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,

Contextual Info: RFD8P06LESM, RFP8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET ju iy 1 9 9 7 Features Description • 8A, 60V T hese pro du cts are P -C hannel po w e r M O S FE T s m an ufacture d using the M eg aF E T process. T his process, w h ich uses feature sizes appro aching tho se o f LSI circuits,

d8p05

Contextual Info: P *3 3 S RFD8P05, RFD8P05SM, RFP8P05 -8A, -50V, 0.300 Ohm, P-Channel Power MOSFETs July 1998 Description Features -8A, -50V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,

D8P05

Abstract: RFD8P05 RFD8P05SM RFD8P05SM9A RFP8P05 TB334
Contextual Info: RFD8P05, RFD8P05SM, RFP8P05 Data Sheet July 1999 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs • 8A, 50V Formerly developmental type TA09832. • rDS ON = 0.300Ω • UIS SOA Rating Curve • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

Contextual Info: RFD8P06ESM Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)8.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)48# Minimum Operating Temp (øC)-55

Logic Level p-Channel Power MOSFET

Abstract: 08E4 pspice ESD
Contextual Info: RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet Title FD8 6LE D8 6LE M, P8P LE bt A, V, 00 m, D ted, gic vel, an- July 1999 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET Features These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process,

RFD8P06E

Abstract: RFD8P06ESM RFD8P06ESM9A RFP8P06E IS415 BV202 D8P06
Contextual Info: RFD8P06E, RFD8P06ESM, RFP8P06E S E M I C O N D U C T O R 8A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 8A, 60V SOURCE • rDS ON = 0.300Ω DRAIN GATE • Temperature Compensating PSPICE Model

RFD8P06E

Abstract: RFD8P06ESM RFD8P06ESM9A RFP8P06E TB334
Contextual Info: RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet July 1999 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs File Number 3937.5 Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

8A60V

Abstract: rfp8p06e
Contextual Info: RFD8P06E, RFD8P06ESM, RFP8P06E integri I D a ta S h e e t J u ly 1 9 9 9 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs F ile N u m b e r 3 9 3 7 .5 Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

RFD8P06LESM9A

Abstract: m041 mosfet motor dc 48v Logic Level p-Channel Power MOSFET RFD8P06LE RFD8P06LESM RFP8P06LE 08E4 30e2
Contextual Info: RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet July 1999 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET • 8A, 60V Formerly developmental type TA49203. • rDS ON = 0.300Ω • 2kV ESD Protected • Temperature Compensating PSPICE Model

D8P05

Abstract: rfp8p05 625Q TA09832
Contextual Info: inteikSI RFD8P05, RFD8P05SM, RFP8P05 D ata S heet J u ly 1999 BA, 50V, 0.300 Ohm, P-Channel Power MOSFETs File N u m b e r 23 84.2 Features • 8A, 5 0V T h e se products are P -C hannel pow e r M O S F E Ts m anufactured using th e M e ga F E T process. This process,

RFD8P06LE

Abstract: RFD8P06LESM RFD8P06LESM9A RFP8P06LE 30e2
Contextual Info: S E M I C O N D U C T O R RFD8P06LE, RFD8P06LESM, RFP8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET July 1997 Features Description • 8A, 60V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process,

Contextual Info: RFD8P06E Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)8.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)48# Minimum Operating Temp (øC)-55

Contextual Info: RFD8P05 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)8# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)20# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40# Minimum Operating Temp (øC)-55õ

Contextual Info: RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet Title FD8 6E, D8 6ES P8P E bt A, V, 00 m, 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs Features These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

D8P05

Abstract: RFP8P05 23842
Contextual Info: RFD8P05, RFD8P05SM, RFP8P05 Data Sheet Title FD8 5, D8 5S P8P bt ,V, 00 m, anwer OSTs utho eyrds ter- July 1999 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs Features These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process,

D8P05

Abstract: RFD8P05 RFP8P05 RFD8P05SM RFD8P05SM9A TB334 JEDEC TO-251AA
Contextual Info: RFD8P05, RFD8P05SM, RFP8P05 Data Sheet January 2002 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs Features • 8A, 50V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,

Contextual Info: RFD8P05SM Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)8# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)20# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40# Minimum Operating Temp (øC)-55õ

SS*2n60b

Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
Contextual Info: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031