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    Infineon Technologies AG IRF9Z34NLPBF

    Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
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    Rochester Electronics IRF9Z34NLPBF 335 1
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    International Rectifier IRF9Z34NLPBF

    HEXFET POWER MOSFET Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
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    ComSIT USA IRF9Z34NLPBF 1,150
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    RF9Z34NL Datasheets Context Search

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    RF9Z34N

    Contextual Info: P D - 9.1525 International I Q R Rectifier IRF9Z34NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF9Z34NS • Low-profile through-hole (I RF9Z34NL) • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated


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