RF TRANSISTOR 10GHZ LOW NOISE Search Results

Contextual Info: Ordering number : ENA1921A MCH4014 RF Transistor http://onsemi.com 12V, 30mA, fT=10GHz NPN Single MCPH4 Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V) High gain : |S21e|2=18dB typ (f=1GHz) Halogen free compliance

Contextual Info: Ordering number : ENA1922 MCH4016 RF Transistor http://onsemi.com 12V, 30mA, fT=10GHz, NPN Single MCPH4 Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V) High gain : |S21e|2=18dB typ (f=1GHz) Halogen free compliance

Contextual Info: Ordering number : ENA1912 MCH4017 RF Transistor http://onsemi.com 12V, 100mA, fT=10GHz, NPN Single MCPH4 Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V) High gain : |S21e|2=17dB typ (f=1GHz) Halogen free compliance

Contextual Info: Ordering number : ENA1921A MCH4014 RF Transistor http://onsemi.com 12V, 30mA, fT=10GHz NPN Single MCPH4 Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V) High gain : |S21e|2=18dB typ (f=1GHz) Halogen free compliance

tl 0741

Contextual Info: Ordering number : ENA1911 MCH4015 RF Transistor http://onsemi.com 12V, 100mA, fT=10GHz, NPN Single MCPH4 Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V) High gain : |S21e|2=17dB typ (f=1GHz) Halogen free compliance

Contextual Info: Ordering number : ENA1910A CPH6021 RF Transistor http://onsemi.com 12V, 100mA, fT=10GHz, NPN Single CPH6 Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V) High gain : |S21e|2=14dB typ (f=1GHz) Halogen free compliance

Contextual Info: Ordering number : ENA1120A 2SC5646A RF Transistor 4V, 30mA, fT=12.5GHz, NPN Single SSFP http://onsemi.com Features • • • • • • Low-noise : NF=1.5dB typ f=2GHz High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V) Low-voltage operation

Contextual Info: BFP720F Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-25 RF & Protection Devices Edition 2012-10-25 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BFP720 Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-19 RF & Protection Devices Edition 2012-10-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

BFP450

Abstract: RF TRANSISTOR 10GHZ 434mhz RF TRANSISTOR 10GHZ low noise BFP740 TR119 MURATA LQW15A LQW15A RF Bipolar Transistor lna x band
Contextual Info: Technical Report, 2009-Feb-11 Technical Report High OIP3 LNA using BFP450 for 434MHz ISM band Application Technical Report TR119 Device: BFP450 Application: High-OIP3 LNA for 434MHz ISM Band Applications

10GHz oscillator

Abstract: 4 pin dual-emitter RF TRANSISTOR 10GHZ BFU510 RF TRANSISTOR 2.5 GHZ s parameter RCS9 "MARKING CODE A5*" 6 pins IC cbe LC marking code transistor RF NPN POWER TRANSISTOR 2.5 GHZ
Contextual Info: DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary specification 2001 Nov 08 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 PINNING FEATURES • Very high power gain PIN • Very low noise figure

RF TRANSISTOR 10GHZ

Abstract: BFP720 RF TRANSISTOR 10GHZ low noise 2.4ghz lnb RF NPN POWER TRANSISTOR C 10-12 GHZ TRANSISTOR 10GHZ RF Bipolar Transistor bipolar transistor ghz s-parameter 1B marking
Contextual Info: D at a S h ee t , R ev . 1 . 0 , J an ua ry 2 00 9 B FP 72 0 S i G e :C H e t e r oj u n c t i o n W i d e ba n d R F B i p ol a r Transistor S m a l l S i g n a l D i s c r et e s Edition 2009-01-20 Published by Infineon Technologies AG, 85579 Neubiberg, Germany

Contextual Info: DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 PINNING FEATURES • Very high power gain PIN • Very low noise figure

Contextual Info: BFP720ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-15 RF & Protection Devices Edition 2012-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

Contextual Info: BFP640ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-17 RF & Protection Devices Edition 2012-09-17 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

bfp840

Abstract: LNA ku-band BFP840FESD BFP840F ku-band lnb simulation
Contextual Info: BFP840FESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

Contextual Info: BFP840FESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

transistor 9716

Abstract: photodiode 10Ghz PIN
Contextual Info: 19-1970; Rev 1; 10/01 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at +3.3V Supply ♦ 1.1µA RMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAp-p Input Overload ♦ Received-Signal Strength Indication

germanium photodiode PIN

Abstract: photodiode 10Ghz PIN BP11 BP13 MAX3970 TIA 100G Photodiode, 10ghz
Contextual Info: 19-1970; Rev 0; 3/01 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at +3.3V Supply ♦ 1.1µA RMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAp-p Input Overload ♦ Received-Signal Strength Indication

transistor 9716

Abstract: photodiode 10Ghz PIN bp-15 0.25pF BP-17 HFAN11
Contextual Info: 19-1970; Rev 1; 10/01 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at +3.3V Supply ♦ 1.1µA RMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAp-p Input Overload ♦ Received-Signal Strength Indication

optical receiver -25dbm 10ghz

Abstract: photodiode germanium Photodiode, 10ghz RF TRANSISTOR 10GHZ low noise Germanium Amplifier Circuit diagram transistor 9716
Contextual Info: 19-1970; Rev 2; 1/02 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at 3.3V Supply ♦ 1.1µARMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAP-P Input Overload ♦ Received-Signal Strength Indication

RF TRANSISTOR 10GHZ

Abstract: BFP720F C166 MHz MIPI
Contextual Info: BFP720F SiGe:C Heterojunction Wideband RF Bipolar Transistor Data Sheet Revision 1.0, 2009-03-13 RF & Protection Devices Edition 2009-03-13 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BFP720F SiGe:C Heterojunction Wideband RF Bipolar Transistor Data Sheet Revision 1.0, 2009-03-13 RF & Protection Devices Edition 2009-03-13 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

XPOSYS

Abstract: gummel poon model parameter HBT X-GOLD colossus diodes transistor marking k2 dual Trimble Germanium Transistor agilent ads SENSONOR 2.4ghz lnb
Contextual Info: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.