RF TRANSFORMER BALUN Search Results

RF TRANSFORMER BALUN Result Highlights (5)

Part	Manufacturer	Description	Download
BLA1011-300	Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
CLF1G0035-100P	Rochester Electronics LLC	CLF1G0035-100 - 100W Broadband RF power GaN HEMT	PDF
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag	PDF
LXMS21NCMH-230	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag	PDF
LBAA0QB1SJ-295	Murata Manufacturing Co Ltd	SX1262 MODULE WITH OPEN MCU	PDF

RF TRANSFORMER BALUN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
balun transformer 75 ohm Abstract: 300 ohms balun b 595 transistor CRC10 UF281OOH Contextual Info: RF MOSFET Power Transistor, iOOW, 28V 100 - 500 MHz UF281 OOH Features N-Channel Enhancement DMOS Structure Lower Capacitances Mode Device for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Input Capacitance c IS	Original	UF281 3050152-W balun transformer 75 ohm 300 ohms balun b 595 transistor CRC10 UF281OOH	PDF
pulse transformer bv 070 Abstract: 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer Contextual Info: e-5 -,-5 3 .-= = = -a= =- an AMP company * RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz UF281 OOV v2.00 Features l N-Channel Enhancement &lode Device l DMOS Structure Lower Capacitances l High Saturated Output Power l Lower l for Broadband Operation	Original	UF281 uF261oov 7305OlB2-03 pulse transformer bv 070 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer	PDF
Contextual Info: SIEMENS GSM Receiver Circuit PMB 2401 Preliminary Data Bipolar 1C Features • Heterodyne receiver with demodulator • Down mixing from 900 MHz receiver band to the base band • Demodulation and generation of l/Q-baseband components • Low mixer noise 10 dB SSB	OCR Scan	P-DSO-28 P-DSO-28-4 35b05	PDF

Catalog Datasheet

Type

Document Tags

PDF

balun transformer 75 ohm

Abstract: 300 ohms balun b 595 transistor CRC10 UF281OOH
Contextual Info: RF MOSFET Power Transistor, iOOW, 28V 100 - 500 MHz UF281 OOH Features N-Channel Enhancement DMOS Structure Lower Capacitances Mode Device for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Input Capacitance c IS

Original

UF281 3050152-W balun transformer 75 ohm 300 ohms balun b 595 transistor CRC10 UF281OOH

PDF

pulse transformer bv 070

Abstract: 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer
Contextual Info: e-5 -,-5 3 .-= = = -a= =- an AMP company * RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz UF281 OOV v2.00 Features l N-Channel Enhancement &lode Device l DMOS Structure Lower Capacitances l High Saturated Output Power l Lower l for Broadband Operation

Original

UF281 uF261oov 7305OlB2-03 pulse transformer bv 070 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer

PDF

Contextual Info: SIEMENS GSM Receiver Circuit PMB 2401 Preliminary Data Bipolar 1C Features • Heterodyne receiver with demodulator • Down mixing from 900 MHz receiver band to the base band • Demodulation and generation of l/Q-baseband components • Low mixer noise 10 dB SSB

OCR Scan

P-DSO-28 P-DSO-28-4 35b05

PDF