RF RESISTOR 50 OHM Search Results

Contextual Info: RF Coax Connectors BNC Connectors, 50 Ohm Continued Terminator Plugs 50, 75, 93 Ohm Resistor Specification Tether Plating 1 Watt, 50 Ohm 1 Watt, 75 Ohm 1 Watt, 93 Ohm 0.5 Watt, 75 Ohm 1 Watt, 50 Ohm Body — Nickel Center Contact — Gold Dielectric — Polyethylene

flange RF resistor 50

Abstract: resistor 270 ohm 150 ohms resistor AL203 100 ohm resistance flange RF termination 50 CHF190104xBF
Contextual Info: PL IA NT Features CO M • *R oH S ■ ■ ■ Applications DC to 1 GHz Flanged model Low VSWR 12.5, 25, 50 and 100 ohm resistance values available ■ High power RF transmission CHF190104xBF Series 800 W Power RF Flanged Chip Termination/Resistor Absolute Ratings

gic 1990

Abstract: TQ5M31
Contextual Info: WIRELESS COMMUNICATIONS DIVISION TQ5M31 DATA SHEET Vdd Vdd IF Gain/IP3/current adjustment GIC GND LO RF 50 ohm LO INPUT 3V Downconverter Mixer IC IF OUT GND 50 ohm RF INPUT Features §Single 3V Operation §Adjustable Gain/IP3/Current §Low Current Operation

PE4302G-20MLP

Abstract: PE4302-20MLP PE4302G PE4302 Diode t 4302 PE4302-EK 4302-51
Contextual Info: Product Specification PE4302 50 Ω RF Digital Attenuator 6-bit, 31.5 dB, DC – 4.0 GHz Product Description The PE4302 is a high linearity, 6-bit RF Digital Step Attenuator “DSA” covering a 31.5 dB attenuation range in 0.5 dB steps. This 50-ohm RF DSA provides both parallel and serial CMOS

ECB-101537

Abstract: TRANSISTOR a43 transistor 20 dB 2400 mhz
Contextual Info: Product Description SGA-4386 DC-3500 MHz Silicon Germanium HBT Cascadeable Gain Block Stanford Microdevices’ SGA-4386 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Product Specification PE4305 50 Ω RF Digital Attenuator 5-bit, 15.5 dB, DC – 4.0 GHz Product Description The PE4305 is a high linearity, 5-bit RF Digital Step Attenuator DSA covering a 15.5 dB attenuation range in 0.5 dB steps, and is pin compatible with the PE430x series. This 50-ohm RF

Siemens pulse sequence

Abstract: power supply siemens s5 Siemens diode Ssi
Contextual Info: SIEMENS mmmmmmwm•■tWhP CGY 191 GaAs MMIC • • • • • Dual mode power amplifier for CDMA /TDMA portable cellular phones 29 dBm linear output power PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control Input matched to 50 ohms, simple output match

Contextual Info: Product Specification PE4306 50Ω RF Digital Attenuator 5-bit, 31 dB, 1 – 4000 MHz The PE4306 is a high linearity, 5-bit RF Digital Step Attenuator DSA covering a 31 dB attenuation range in 1dB steps, and is pin compatible with the PE430x series. This 50-ohm RF DSA

Contextual Info: Preliminary Product Description SGA-2486 Stanford Microdevices’ SGA-2486 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Preliminary Product Description SGA-4386 Stanford Microdevices’ SGA-4386 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

MMIC MAR-8

Abstract: TB-432-8A MAR8 MSA-0885 VV105 WW107 MAR-8A
Contextual Info: Drop-In Monolithic Amplifier DC-1 GHz Features • Exact foot print substitute* MAR-8 and MSA-0885 • High gain, 31.5 dB at 0.1 GHz, reduces component count • Internally Matched to 50 Ohms • High power output, +12.5 dBm typ. • Low noise • Improved stability

J12TE2-66D-R01M

Abstract: J12TE3-66D-R250U INSB PHOTODIODE jones chopper J12-18C-R250U RBBG J12-18C thermistor inas detector inas hsa2
Contextual Info: Judson Technologies J12 SERIES INAS DETECTORS PB 220 October 2000 Operating Instructions Typical J12 Series Operating Circuit RF > 10x RD IS - Vo = IS • RF + Detector Ios Preamp Selection vs Shunt Selection Impedance Recommended Detector Shunt Op Amp Impedance ohms

Contextual Info: SNA-300 Product Description Sirenza Microdevices’ SNA-300 is a GaAs monolithic broadband amplifier MMIC in die form. At 1950 MHz, this amplifier provides 22dB of gain when biased at 35mA . These unconditionally stable amplifiers are designed for use as general purpose 50 ohm gain blocks. Its small size

transistor 6bn

Abstract: MAC5-3
Contextual Info: Preliminary Product Description SGA-6586 Stanford Microdevices’ SGA-6586 is a high performance cascadeable 50-ohm amplifier housed in an low-cost surface-mountable plastic package. Designed for operation at voltages as low as 5.0V, this RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor

50 ohm SMA terminators

Abstract: 3840-600
Contextual Info: Coaxial Connectors, Adapters and Kits Coaxial Connectors ATTENUATORS AND TERMINATORS T CANNON All dimensions in inches unless otherwise noted. BNC 50 OHM ATTENUATOR 1.98 BNC 50 OHM ATTENUATOR KIT RATING: 2W Avg. @ 25°C 50Ω impedance. Metal film resistor attenuator.

MHL8115

Abstract: MHL8118
Contextual Info: MOTOROLA Order this document by MHL8115/D SEMICONDUCTOR TECHNICAL DATA MHL8115 MHL8118 The RF Line UHF Linear Amplifier Designed for linear amplifier applications in 50 Ohm systems requiring wide bandwidth, low noise, and low distortion. Internal DC blocking on RF ports

DC-2400 MHz 3.5V SiGe Amplifier

Contextual Info: Preliminary Product Description SGA-5486 Stanford Microdevices’ SGA-5486 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Preliminary Product Description SGA-5389 Stanford Microdevices’ SGA-5389 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Preliminary Product Description SGA-5489 Stanford Microdevices’ SGA-5489 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

SGA5289

Abstract: transistor 20 dB 2400 mhz
Contextual Info: Preliminary Product Description SGA-5289 Stanford Microdevices’ SGA-5289 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Preliminary Product Description SGA-5286 Stanford Microdevices’ SGA-5286 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

DB126

Contextual Info: Preliminary Product Description SGA-6489 Stanford Microdevices’ SGA-6489 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with FT up to

SGA-6486-TR1

Contextual Info: Preliminary Product Description SGA-6486 Stanford Microdevices’ SGA-6486 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with FT up to

HMC336MS8G

Abstract: MSOP8G
Contextual Info: HMC336MS8G v01.1202 MICROWAVE CORPORATION GaAs MMIC SPDT NON-REFLECTIVE POSITIVE CONTROL SWITCH, DC* - 6.0 GHz Typical Applications Features This switch is suitable for usage in DC - 6.0 GHz 50-Ohm or 75-Ohm systems: Broadband Performance: DC - 6.0 GHz High Isolation: 42 dB@ 6 GHz