RF RESISTOR 50 OHM Search Results

Contextual Info: RF Coax Connectors BNC Connectors, 50 Ohm Continued Terminator Plugs 50, 75, 93 Ohm Resistor Specification Tether Plating 1 Watt, 50 Ohm 1 Watt, 75 Ohm 1 Watt, 93 Ohm 0.5 Watt, 75 Ohm 1 Watt, 50 Ohm Body — Nickel Center Contact — Gold Dielectric — Polyethylene

flange RF resistor 50

Contextual Info: NT CO M PL IA Features • *R oH S ■ ■ ■ Applications DC to 1 GHz Flanged model Low VSWR 25, 50 and 100 ohm resistance values available ■ High power RF transmission CHF190104CBF Series 800 W Power RF Flanged Chip Termination/Resistor Absolute Ratings

flange RF resistor 50

Abstract: resistor 270 ohm 150 ohms resistor AL203 100 ohm resistance flange RF termination 50 CHF190104xBF
Contextual Info: PL IA NT Features CO M • *R oH S ■ ■ ■ Applications DC to 1 GHz Flanged model Low VSWR 12.5, 25, 50 and 100 ohm resistance values available ■ High power RF transmission CHF190104xBF Series 800 W Power RF Flanged Chip Termination/Resistor Absolute Ratings

gic 1990

Abstract: TQ5M31
Contextual Info: WIRELESS COMMUNICATIONS DIVISION TQ5M31 DATA SHEET Vdd Vdd IF Gain/IP3/current adjustment GIC GND LO RF 50 ohm LO INPUT 3V Downconverter Mixer IC IF OUT GND 50 ohm RF INPUT Features §Single 3V Operation §Adjustable Gain/IP3/Current §Low Current Operation

PE4302G-20MLP

Abstract: PE4302-20MLP PE4302G PE4302 Diode t 4302 PE4302-EK 4302-51
Contextual Info: Product Specification PE4302 50 Ω RF Digital Attenuator 6-bit, 31.5 dB, DC – 4.0 GHz Product Description The PE4302 is a high linearity, 6-bit RF Digital Step Attenuator “DSA” covering a 31.5 dB attenuation range in 0.5 dB steps. This 50-ohm RF DSA provides both parallel and serial CMOS

SGA-0363

Abstract: EDS-101495
Contextual Info: Preliminary Preliminary Product Description SGA-0363 Stanford Microdevices’ SGA-0363 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

MASW-000834-13560T

Abstract: 1.3k ohm resistor
Contextual Info: MADR-008851-000100 PIN Diode Driver for Series / Shunt High Power Switches Rev. P2 Features Pin Configuration • High Drive Current Capability Up to 50 mA • Up to 32V Back Bias in Off State • Single CMOS Logic Input with 10K Ohm Internal Pull Down Resistor

ECB-101537

Abstract: TRANSISTOR a43 transistor 20 dB 2400 mhz
Contextual Info: Product Description SGA-4386 DC-3500 MHz Silicon Germanium HBT Cascadeable Gain Block Stanford Microdevices’ SGA-4386 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Product Specification PE4305 50 Ω RF Digital Attenuator 5-bit, 15.5 dB, DC – 4.0 GHz Product Description The PE4305 is a high linearity, 5-bit RF Digital Step Attenuator DSA covering a 15.5 dB attenuation range in 0.5 dB steps, and is pin compatible with the PE430x series. This 50-ohm RF

Silicon Bipolar Amplifier A64

Abstract: CATV amplifier transistor SGA-6489 RF TRANSISTOR A64
Contextual Info: Preliminary Product Description SGA-6489 Stanford Microdevices’ SGA-6489 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with FT up to

Siemens pulse sequence

Abstract: power supply siemens s5 Siemens diode Ssi
Contextual Info: SIEMENS mmmmmmwm•■tWhP CGY 191 GaAs MMIC • • • • • Dual mode power amplifier for CDMA /TDMA portable cellular phones 29 dBm linear output power PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control Input matched to 50 ohms, simple output match

Contextual Info: Product Specification PE4306 50Ω RF Digital Attenuator 5-bit, 31 dB, 1 – 4000 MHz The PE4306 is a high linearity, 5-bit RF Digital Step Attenuator DSA covering a 31 dB attenuation range in 1dB steps, and is pin compatible with the PE430x series. This 50-ohm RF DSA

Contextual Info: Preliminary Product Description SGA-3286 Stanford Microdevices’ SGA-3286 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Stanford amplifier

Contextual Info: Preliminary Product Description SGA-4286 Stanford Microdevices’ SGA-4286 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

3386 transistor

Contextual Info: Preliminary Product Description SGA-3386 Stanford Microdevices’ SGA-3386 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Preliminary Product Description SGA-3486 Stanford Microdevices’ SGA-3486 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Preliminary Product Description SGA-2486 Stanford Microdevices’ SGA-2486 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Preliminary Product Description SGA-4386 Stanford Microdevices’ SGA-4386 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: T R I Q U I TQSli n T S E M I C O N D U C T O R , I N C T Q 7 1 11 3V Cellular AMPS Power Amplifier 1C Features • • • • • • 3V, single supply Low voltage operation High efficiency High output power Power TSSOP-2Q plastic package 50-ohm matched input

MMIC MAR-8

Abstract: TB-432-8A MAR8 MSA-0885 VV105 WW107 MAR-8A
Contextual Info: Drop-In Monolithic Amplifier DC-1 GHz Features • Exact foot print substitute* MAR-8 and MSA-0885 • High gain, 31.5 dB at 0.1 GHz, reduces component count • Internally Matched to 50 Ohms • High power output, +12.5 dBm typ. • Low noise • Improved stability

J12TE2-66D-R01M

Abstract: J12TE3-66D-R250U INSB PHOTODIODE jones chopper J12-18C-R250U RBBG J12-18C thermistor inas detector inas hsa2
Contextual Info: Judson Technologies J12 SERIES INAS DETECTORS PB 220 October 2000 Operating Instructions Typical J12 Series Operating Circuit RF > 10x RD IS - Vo = IS • RF + Detector Ios Preamp Selection vs Shunt Selection Impedance Recommended Detector Shunt Op Amp Impedance ohms

Contextual Info: Preliminary Product Description SGA-4186 Stanford Microdevices’ SGA-4186 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Preliminary Product Description SGA-6289 Stanford Microdevices’ SGA-6289 is a high performance cascadeable 50-ohm amplifier designed for operation voltages as low as 4.0V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

SGA-2486

Abstract: transistor 20 dB 2400 mhz SGA2486
Contextual Info: Preliminary Product Description SGA-2486 Stanford Microdevices’ SGA-2486 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT