RF POWER AMPLIFIER MODULE Search Results

gsm booster circuit

Abstract: mrf373al u880 RF MODULATORS mrf9030n MRF6VP11KH MRF6VP2600H MRF5S21045N circuit booster gsm mrfe6s9060
Contextual Info: RF Product Focus Products Quarter 4, 2007 SG1009Q42007 Rev 0 RF Industrial, Scientific and Medical Transistors RF LDMOS Power Transistors RF GaAS Power Transistors RF WiMAX, WiBro, BWA Power Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers

Contextual Info: Changing the Economics of Space Features •• Single-stage 2 watts or two-stage (4 watts) amplifier design utilizing discrete RF GaAs FET transistors providing linear RF output power •• 2 W amplifier is a single module configuration housing the DC power supply and RF amplifier

MMM6029

Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
Contextual Info: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular

Contextual Info: RF Micro Devices RF5198 and RF5184 High-Power, High-Efficiency Linear Power Amplifier Modules for WCDMA Applications The RF5198 and RF5184 from RF Micro Devices® RFMD® are high-power, high-efficiency linear power amplifier modules specifically designed for

AM020331SF-2D

Abstract: mhz rf amplifier module class a power amplifier
Contextual Info: The RF Power House 225 - 300 MHz 2 Watt Power Amplifier AM020331SF-2D DESCRIPTION AMCOM's AM020331SF-2D is a UHF Band Power Amplifier designed for FEATURES high power RF applications. It operates from 225 to 300 MHz and delivers a • Class A Power Amplifier

s-av6

Abstract: RF Power Amplifier Module toshiba tv schematic toshiba rf module vHF amplifier module s-av6 SAV6
Contextual Info: TOSHIBA S-AV6 TOSHIBA RF POWER AMPLIFIER MODULE S-AV6 VHF MARINE FM RF POWER AMPLIFIER MODULE CHARACTERISTIC Frequency Range Output Power Power Gain Total Efficiency Input VSWR Harmonics Unit in mm SYMBOL TEST CONDITION frange Po Gp — VT VSWRin HRM Pi = 200mW

S-AU82VL

Abstract: TOSHIBA RF Power Module 5-53P
Contextual Info: S-AU82VL TOSHIBA RF POWER AMPLIFIER MODULE S-AU82VL ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

S-AU83H

Abstract: 5-53P
Contextual Info: S-AU83H TOSHIBA RF POWER AMPLIFIER MODULE S-AU83H ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :32W Min. ･Power Gain :28.0dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

S-AV35

Abstract: RF power amplifier 10mW RF Power Amplifier Module
Contextual Info: S-AV35 TOSHIBA RF POWER AMPLIFIER MODULE S-AV35 ○FM RF POWER AMPLIFIER MODULE for VHF MARINE BAND ･Output Power :32W Min. ･Power Gain :35.0dB (Min.) ･Total Efficiency:50% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

S-AU93

Abstract: 5-53P
Contextual Info: S-AU93 TOSHIBA RF POWER AMPLIFIER MODULE S-AU93 ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

S-AV33

Abstract: 5-53P
Contextual Info: S-AV33 TOSHIBA RF POWER AMPLIFIER MODULE S-AV33 ○FM RF POWER AMPLIFIER MODULE for VHF BAND ･Output Power :32W Min. ･Power Gain :28.0dB (Min.) ･Total Efficiency:45% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

S-AU82L

Abstract: SAU82L 5-53P
Contextual Info: S-AU82L TOSHIBA RF POWER AMPLIFIER MODULE S-AU82L ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

S-AU82H

Abstract: 5-53P
Contextual Info: S-AU82H TOSHIBA RF POWER AMPLIFIER MODULE S-AU82H ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

TOSHIBA RF Power Module S-AV36

Abstract: S-AV36 toshiba S-AV36 sav36 5-53P VDD12
Contextual Info: S-AV36 TOSHIBA RF POWER AMPLIFIER MODULE S-AV36 ○FM RF POWER AMPLIFIER MODULE for VHF BAND ･Output Power :80W Min. ･Power Gain :32.0dB (Min.) ･Total Efficiency:45% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

S-AV37

Abstract: RF power amplifier 10mW
Contextual Info: S-AV37 TOSHIBA RF POWER AMPLIFIER MODULE S-AV37 ○FM RF POWER AMPLIFIER MODULE for VHF MARINE BAND ･Output Power :32W Min. ･Power Gain :35.0dB (Min.) ･Total Efficiency:50% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

S-AV35

Abstract: "RF Power Amplifier" RF power amplifier 10mW
Contextual Info: S-AV35 TOSHIBA RF POWER AMPLIFIER MODULE S-AV35 ○FM RF POWER AMPLIFIER MODULE for VHF MARINE BAND ･Output Power :32W Min. ･Power Gain :35.0dB (Min.) ･Total Efficiency:50% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

S-AU83L

Abstract: 5-53P "power amplifier" sau83l
Contextual Info: S-AU83L TOSHIBA RF POWER AMPLIFIER MODULE S-AU83L ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :32W Min. ･Power Gain :28.0dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

s-av7

Contextual Info: TOSHIBA S-AV7 TOSHIBA RF POWER AMPLIFIER MODULE < ;. ä v 7 VHF HAM FM RF POWER AMPLIFIER MODULE CHARACTERISTIC Frequency Range Output Power Power Gain Total Efficiency Input VSWR Harmonics SYM BO L frange Po G? VT VSW Rin Unit in mm T EST CONDITION — Pi = 200mW

Contextual Info: RF3163 and RF3164 3x3mm CDMA Power Amplifier Modules RF Micro Devices High-power, High-efficiency Linear Power Amplifier Modules for CDMA Applications The RF3163 and RF3164 are high-power, high-efficiency linear power amplifier modules specifically designed for 3V

TOSHIBA RF Power Module

Contextual Info: S−AU57 TOSHIBA RF POWER AMPLIFIER MODULE S−AU57 UHF BAND HAM FM RF POWER AMPLIFIER MODULE HAND−HELD TRANSCEIVER Unit in mm MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VDD 17 V DC Supply Voltage VGG 6 V Input Power

Contextual Info: S−AU57 TOSHIBA RF POWER AMPLIFIER MODULE S−AU57 UHF BAND HAM FM RF POWER AMPLIFIER MODULE HAND−HELD TRANSCEIVER Unit in mm MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VDD 17 V DC Supply Voltage VGG 6 V Input Power

S-AV33A

Abstract: S-AV33 5-53P S-AU82AL
Contextual Info: S-AV33A TOSHIBA RF POWER AMPLIFIER MODULE S-AV33A FM RF POWER AMPLIFIER MODULE FOR 32W COMMERCIAL VHF RADIO APPLICATIONS ･Power Gain: 28 dB Min. ･Total Efficiency: 45% (Min.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C, IT < 10 A, ZG = ZL = 50Ω) CHARACTERISTICS

sav40

Abstract: S-AV40
Contextual Info: S-AV40 TOSHIBA RF POWER AMPLIFIER MODULE S-AV40 FM RF POWER AMPLIFIER MODULE FOR 30W COMMERCIAL VHF RADIO APPLICATIONS ･Power Gain: 34.7 dB Min. ･Total Efficiency: 40% (Min.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C, IT < 8 A, ZG = ZL = 50Ω) CHARACTERISTICS

POT1 10T R1K

Abstract: AC00 DS1870 DS1870E-010 J-STD-020A pin diagram of bf 494 transistor
Contextual Info: Rev 1; 5/04 LDMOS RF Power-Amplifier Bias Controller Features The DS1870 is a dual-channel bias controller targeted toward class AB LDMOS RF power-amplifier applications. It uses lookup tables LUTs to control 256-position potentiometers based on the amplifier’s