RF POWER AMPLIFIER 40 MHZ Search Results

GRM422Y5V106Z050AL

Abstract: PTMA180402M RO4350 INFINEON 20PIN
Contextual Info: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications

GRM422Y5V106Z050AL

Abstract: PTMA180402M RO4350
Contextual Info: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications

PTMA180402M V1

Abstract: GRM422Y5V106Z050AL JESD22-A114-F PCE3718CT-ND transistor c 2060 PTMA180402M RO4350
Contextual Info: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications

Contextual Info: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications

"RF Power Amplifier"

Abstract: RF1800
Contextual Info: RF1800 1900 - 40 RF Power Amplifier This solid state power amplifier is designed for realiable,trouble-free service.It operate in a class A/AB and includes RF protection circuits,cooling installations so as a 230 V AC power supply. The amplifier is accommodated in a 19" system housing.

Contextual Info: Preliminary data sheet RF59006400 - 40 RF Power Amplifier This solid state power amplifier is designed for realiable,trouble-free service.It operatein a class A and includes RF protection circuits,cooling installations so as a 230 V AC power supply. The amplifier is accommodated in a 19" system housing.

P 1504 EDG

Abstract: GRM422Y5V106Z050AL PTMA180402 12 pF ceramic capacitor INFINEON 20PIN c20vd2
Contextual Info: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 28 V, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications

Contextual Info: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 28 V, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications

S-AU82VL

Abstract: TOSHIBA RF Power Module 5-53P
Contextual Info: S-AU82VL TOSHIBA RF POWER AMPLIFIER MODULE S-AU82VL ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

S-AU83H

Abstract: 5-53P
Contextual Info: S-AU83H TOSHIBA RF POWER AMPLIFIER MODULE S-AU83H ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :32W Min. ･Power Gain :28.0dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

S-AU93

Abstract: 5-53P
Contextual Info: S-AU93 TOSHIBA RF POWER AMPLIFIER MODULE S-AU93 ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

S-AU82L

Abstract: SAU82L 5-53P
Contextual Info: S-AU82L TOSHIBA RF POWER AMPLIFIER MODULE S-AU82L ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

S-AU82H

Abstract: 5-53P
Contextual Info: S-AU82H TOSHIBA RF POWER AMPLIFIER MODULE S-AU82H ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

S-AU83L

Abstract: 5-53P "power amplifier" sau83l
Contextual Info: S-AU83L TOSHIBA RF POWER AMPLIFIER MODULE S-AU83L ○FM RF POWER AMPLIFIER MODULE for UHF BAND ･Output Power :32W Min. ･Power Gain :28.0dB (Min.) ･Total Efficiency:40% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION

ARF1501

Abstract: "27 mhz" amp 700B ARF1500 RF BeO
Contextual Info: S D ARF1501 S ARF1501 BeO RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 1525-xx G S 250V 750W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.

Contextual Info: S D ARF1501 S ARF1501 BeO RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 1525-xx G S 250V 750W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.

sav40

Abstract: S-AV40
Contextual Info: S-AV40 TOSHIBA RF POWER AMPLIFIER MODULE S-AV40 FM RF POWER AMPLIFIER MODULE FOR 30W COMMERCIAL VHF RADIO APPLICATIONS ･Power Gain: 34.7 dB Min. ･Total Efficiency: 40% (Min.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C, IT < 8 A, ZG = ZL = 50Ω) CHARACTERISTICS

Contextual Info: SLNA-010-40-08-SMA DATA SHEET 0.8 dB NF Low Noise Amplifier Operating From 10 MHz to 1,000 MHz with 40 dB Gain, 18 dBm P1dB and SMA SLNA-010-40-08-SMA is a wideband low noise RF coaxial power amplifier operating in the 10 MHz to 1 GHz frequency range. The amplifier offers 0.8 dB noise

2N5643

Contextual Info: New TELEPHONE: 201 376-2922 3STERNAVE. PRINGFIELD, NEW JERSEY 07081 .S.A. (212) 227-6005 FAX: (201) 376-8960 2N5643 The RF Line 40 W- 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed primarily for wideband large-signal amplifier stages in

150 watt amplifier

Abstract: transistor amplifier 5v to 15v AM091047SF-2H
Contextual Info: The RF Power House 935 - 960 MHz 40 Watt Power Amplifier AM091047SF-2H DESCRIPTION AMCOM's AM091047SF-2H is a Cellular Broadband Power Amplifier designed for high power applications. The class AB amplifier operates from 935 to 960 MHz and delivers a minimum P1dB of +46 dBm and a minimum

AM080947SF-2H

Abstract: 860-900MHZ
Contextual Info: The RF Power House 860 - 900 MHz 40 Watt Power Amplifier AM080947SF-2H DESCRIPTION AMCOM's AM080947SF-2H is a Cellular Broadband Power Amplifier designed for high power applications. The class AB amplifier operates from 860 to 900 MHz and delivers a minimum P1dB of +46 dBm and a minimum

motorola rf device

Abstract: motorola rf Power Transistor VK200 rfc RF POWER TRANSISTOR NPN VK-200 2 w RF POWER TRANSISTOR NPN MRF224
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF224 The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 Volt VHF large-signal power amplifier applications required in commercial and industrial equipment operating to VHF frequencies. • 40 W, 175 MHz

AMPLIFIER 1500w

Contextual Info: S D ARF1500 S D ARF1500 BeO RF POWER MOSFET 135-05 G S S N - CHANNEL ENHANCEMENT MODE G S 125V 900W 40MHz The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.

AMPLIFIER 1500w

Abstract: ARF 250v 1500w rf power generator ARF1501 ARF1500 1500W Power Amplifier
Contextual Info: S D ARF1501 S D ARF1500 BeO RF POWER MOSFET 135-05 G S S G S N - CHANNEL ENHANCEMENT MODE 250V 1500W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.