RF POWER AMPLIFIER 10 WATT Search Results

PHM002

Abstract: idq06a
Contextual Info: polyfet rf devices PHM002 Power RF Amplifiers Power = 10 Watts Bandwidth = 250 to 400 Mhz Gain = 10 dB Vdd =12.5 Volts 50 ohms Input/Output Impedance Description The PHM002 is a single stage amplifier specifically designed for Military Bandwidth. This amplifier can be used as a

AETHERCOMM

Abstract: Acros
Contextual Info: Solid State Power Amplifier High Power X Band Solid State RF Amplifier Aethercomm P/N SSPA 7.1-7.3-10 is a High Power X • 5 watts linear or pulsed RF power min Band SSPA used in the DSCC Exciter-Transmitter • Operation from 7.1 to 7.3 GHz Subsystem. It is used as a TWT driver amplifier. It

Polyfet RF Devices

Abstract: PHM012 Polyfet
Contextual Info: polyfet rf devices PHM012 Power RF Amplifiers Power = 5 Watts Bandwidth = 340 to 370 Mhz Gain = 25 dB Vdd = 10 Volts 50 ohms Input/Output Impedance Description The PHM012 is a two stage amplifier specifically designed military and commercial bandwidths. This amplifier can

RF9002000-10

Contextual Info: Preliminary data sheet RF9002000-10 RF Power Amplifier This solid state power amplifier is designed for realiable,trouble-free service.It operate in a class A and includes RF protection circuits,cooling installations so as a 230 V AC power supply. The amplifier is accommodated in a 19" system housing.

Contextual Info: Preliminary data sheet RF1700 2400 -10 RF Power Amplifier This solid state power amplifier is designed for realiable,trouble-free service.It operatein a class A and includes RF proctection circuits,cooling installations so as a 230 V AC power supply. The amplifier is accommodated in a 19" system housing.

Contextual Info: Preliminary data sheet RF001220 - 10 RF Power Amplifier This solid state power amplifier is designed for realiable,trouble-free service.It operatein a class A/AB and includes RF protection circuits,cooling installations so as a 230 V AC power supply. The amplifier is accommodated in a 19" system housing.

Contextual Info: Preliminary data sheet RF59006400 - 10 RF Power Amplifier This solid state power amplifier is designed for realiable,trouble-free service.It operate in a class A and includes RF protection circuits,cooling installations so as a 230 V AC power supply. The amplifier is accommodated in a 19" system housing.

RF801000

Contextual Info: Preliminary data sheet RF801000 -10 RF Power Amplifier This solid state power amplifier is designed for realiable,trouble-free service.It operatein a class A/AB and includes RF protection circuits,cooling installations so as a 230 V AC power supply. The amplifier is accommodated in a 19" system housing.

Contextual Info: MOTOROLA Order this document by MHW1910/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1910-1 PCS Band RF Power LDMOS Amplifier 1930ā–ā1990 MHz, 10 W RF POWER LDMOS AMPLIFIER CASE 301AW–02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit DC Supply Voltage

Motorola 666

Abstract: MHW1910 MHW1910-1 1800 ldmos
Contextual Info: MOTOROLA Order this document by MHW1910/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1910-1 PCS Band RF Power LDMOS Amplifier 1930ā–ā1990 MHz, 10 W RF POWER LDMOS AMPLIFIER CASE 301AW–02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit DC Supply Voltage

2.45 Ghz power amplifier 45 dbm

Abstract: transistor amplifier 3 ghz 10 watts 2.45 Ghz power amplifier
Contextual Info: Solid State Power Amplifier Medium Power, Broadband Solid State RF Amplifier Aethercomm P/N SSPA 0.8-3.2-10 was designed to • 5 watts minimum output power be used as a laboratory amplifier for all medium • 9 watts typical output power power testing needs from 800 MHz to 3.2 GHz. This

MAAM-007502-CPA512

Abstract: MAAM-007502-SPA512 PA512 200-IP2
Contextual Info: Cascadable Amplifier 10 to 500 MHz PA512 / SPA512 V1 Features • • • • Product Image HIGH POWER OUTPUT: +27.5 dBm TYP. HIGH THIRD ORDER I.P.: +39 DBm (TYP.) MODERTE NOISE FIGURE: 5.2 dB (TYP.) GaAs FET AMPLIFIER Description The PA512 0.5 watt RF power amplifier is a discrete

WNMP1033

Contextual Info: RF AMPLIFIER MODEL BXMP1033 Medium Power Amplifier Available as: Features ! ! ! ! WNMP1033, 10 Pin .625” Sq. Gullwing Surface-Mount SG4 BXMP1033, SMA Connectorized Housing Typical Intermodulation Performance at 25 º C High Output Power: +30.5 dBm Typical

SSPA

Contextual Info: Solid State Pulsed Power Amplifier High Power Pulsed L Band Solid State RF Amplifier Aethercomm P/N SSPA 1.08-1.10-10 is a high power, • Minimum output power = 40 Watts 40 watt pulsed, L band SSPA used in Secondary • Pulse droop < 0.05 dB for a 1 uSec pulse

HPA C band

Abstract: PDC-900-10 DSA0069923
Contextual Info: Page 1 of 3 1860 Hartog Drive, San Jose, CA 95131 TEL: 408-437-8605 FAX: 408-436-7698 CELLULAR BAND SINGLE CHANNEL POWER AMPLIFIER 10 WATTS CDMA Parameter Frequency Range Pout, average RF Gain RF Gain flatness RF Gain vs. temp. Spectral Regrowth Pin Noise Figure

PHM006

Abstract: 460MHz RF power transistors 3000
Contextual Info: polyfet rf devices PHM006 Power RF Amplifiers Power = 10 Watts Bandwidth = 450 to 470 Mhz Gain = 25 dB Vdd =12.5 Volts 50 ohms Input/Output Impedance Description The PHM006 is a high gain high power amplifier design for the Tetra frequency range. It has two stages and uses the latest

material declaration taiyo yuden

Abstract: RF5110G DS110914 275sq
Contextual Info: RF5110G 3V GENERAL PURPOSE/GSM POWER AMPLIFIER VCC NC 14 13 VCC1 1 12 RF OUT GND1 2 11 RF OUT RF IN 3 10 RF OUT GND2 4 9 RF OUT Applications  15 6 7 8 2f0 5 NC GSM: Single 2.7V to 4.8V Supply +36dBm Output Power at 3.5V 32dB Gain with Analog Gain Control

Contextual Info: RF5110G 3V GENERAL PURPOSE/GSM POWER AMPLIFIER VCC NC 14 13 VCC1 1 12 RF OUT GND1 2 11 RF OUT RF IN 3 10 RF OUT GND2 4 9 RF OUT Applications  15 6 7 8 2f0 5 NC GSM: Single 2.7V to 4.8V Supply +36dBm Output Power at 3.5V 32dB Gain with Analog Gain Control

PKZ connector

Contextual Info: 27223 DML Microwave 4/7/01 1:54 pm Page 9 WLL P.A. CDMA POWER AMPLIFIER FOR WIRELESS LOCAL LOOP BASE STATIONS GENERAL INFORMATION ADVANTAGES The MCE DML Microwave High Power Amplifier is specifically designed for CDMA Wireless Local Loop Base Stations. It has two 10 Watt RF

MCDK21

Abstract: f88m
Contextual Info: polyfet rf devices MCDK21 Power RF Amplifiers Power = 10.0 Watts Bandwidth = 30 to Gain = 25.0 dB 88 Mhz Vdd = 12.0 Volts 50 ohms Input/Output Impedance Description The MCDK21 is a 10 Watt, 2 stage high gain amplifier module covering a bandwidth of 30-88 Mhz. This compact module design is

PHM021

Abstract: 250 watt amplifier
Contextual Info: polyfet rf devices PHM021 Power RF Amplifiers Power = 10.0 Watts Bandwidth = 136 to 174 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The PHM021 is a 10 Watt FM / 2 Watt AM amplifier module covering a bandwidth of 136-174 Mhz. It has a high IP3 rating when

amplifier 446 mhz

Abstract: PHM017 uhf linear amplifier module
Contextual Info: polyfet rf devices PHM017 Power RF Amplifiers Power = 10.0 Watts Bandwidth = 380 to 512 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The PHM017 is a 10 Watt FM / 2 Watt AM amplifier module covering a bandwidth of 380-512 Mhz. It has a high IP3 rating when

2 Watt rf Amplifier

Abstract: RF power amplifier MHz WNMP1005 250 watt amplifier
Contextual Info: Medium Power Amplifier RF AMPLIFIER MODEL BXMP1005 Available as: WNMP1005, 10 Pin .625” Sq. Surface Mount SG4 BXMP1005, SMA Connectorized Housing Features Typical Intermodulation Performance at 25 º C Second Order Harmonic Intercept Point . +66 dBm (Typ.)

ph 77

Abstract: rf power amplifier transistor with s-parameters WNMP1010
Contextual Info: Medium Power Amplifier RF AMPLIFIER MODEL BXMP1010 Available as: WNMP1010:10 Pin .625” Sq. Surface Mount SG4 BXMP1010: SMA Connectorized Housing Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point . +74 dBm (Typ.)