RF PIN DIODE Search Results

anzac switches

Abstract: anzac SIGNAL PATH designer designers handbook
Contextual Info: PIN DIODE RF SWITCHES INTRODUCTION PIN diode RF switches are devices which control the path of RF signals through transm ission line media. The switching is performed by biased PIN diodes in the RF path and is totally solid state in operation. PIN diode RF switches are typically used in small

AN034

Abstract: BA592 INFINEON application note BA595 BAR63 BAR64 RF Semiconductors infineon RF
Contextual Info: Application Note No. 034 Discrete & RF Semiconductors Carrier Lifetime and Forward Resistance in RF PIN-Diodes This abstract summarises the fundamentals of RF PIN Diode physics. General design considerations of PIN Diodes are discussed and a measuring method

walkie talkie circuit

Abstract: BAP1321LX BAP64LX BAP65LX BAP142LX BAP50LX BAP51LX BAP55LX BAP63LX walkie-talkie
Contextual Info: RF PIN diodes in leadless SOD882T Boost RF performance and reduce system size Deliver the maximum performance and functionality in the smallest space with our new RF PIN diodes in SOT882T. These unique products enhance the RF performance of your system while

diode SMD MARKING CODE K6

Abstract: diode SMD MARKING CODE K6 03 diode k6 diode SMD MARKING CODE K6 06 MAM405 diode SMD MARKING CODE K6 02 SOD723A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP65-01 Silicon PIN diode Preliminary specification 2001 Nov 01 Philips Semiconductors Preliminary specification Silicon PIN diode BAP65-01 PINNING FEATURES • High voltage, current controlled PIN DESCRIPTION • RF resistor for RF switches

smd diode K7

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP1321-02 Silicon PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification Silicon PIN diode BAP1321-02 FEATURES PINNING • High voltage, current controlled PIN • RF resistor for RF attenuators and switches

smd diode K7

Abstract: DIODE SMD K7 smd k7 diode SOD723A smd diode code K7 smd transistor marking K7 SOD-723A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP1321-01 Silicon PIN diode Preliminary specification 2001 Nov 01 Philips Semiconductors Preliminary specification Silicon PIN diode BAP1321-01 PINNING FEATURES • High voltage, current controlled PIN • RF resistor for RF attenuators and switches

Contextual Info: BAR64V-04 Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-23 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-04 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be

Contextual Info: BAR64V-02V Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description Characterized by low reverse Capacitance the PIN Diode BAR64V-02V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be

BAR64V-04W

Abstract: BAR64V-04W-GS08 BAR64V-04W-GS18 BYT41A BYT41M
Contextual Info: BAR64V-04W Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-04W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be

85647

Contextual Info: BAR64V-05W Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT-323 Description 2 Characterized by low reverse Capacitance the PIN Diodes BAR64V-05W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be

BAR64V-04

Abstract: BAR64V-04-GS08 BAR64V-04-GS18
Contextual Info: BAR64V-04 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-23 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-04 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be

Contextual Info: BAR64V-05W-V Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-05W-V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance RF can be

Contextual Info: BAR64V-05W-V Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-05W-V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance RF can be

Contextual Info: BAR63V-03 Vishay Semiconductors RF PIN Diode - Single in SOT23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Contextual Info: BAR64V-05W-V Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT-323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-05W-V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance RF can be

Contextual Info: BAR64V-05W-V Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT-323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-05W-V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance RF can be

BAR64V-05

Abstract: BAR64V-05-GS08 BAR64V-05-GS18
Contextual Info: BAR64V-05 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT-23 Description 2 Characterized by low reverse Capacitance the PIN Diodes BAR64V-05 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be

BAR63V-03

Abstract: BAR63V-03-GS08 BAR63V-03-GS18
Contextual Info: BAR63V-03 Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Contextual Info: BAR64V-05W-V Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT-323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-05W-V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance RF can be

Contextual Info: BAR63V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description 1 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

BAR63V-06W

Abstract: BAR63V-06W-GS08 BAR63V-06W-GS18
Contextual Info: BAR63V-06W Vishay Semiconductors RF PIN Diodes - Dual, Common Anode in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-06W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

BH203

Contextual Info: SILICON PIN DIODES High voltage PIN diodes Two & three port RF PIN switch modules Description This series of SP2T and SP3T RF switches uses high voltage PIN diodes, from the EH80000 family, to achieve very low loss and distortion. Theses switches can be used from 1.5 to 1000 MHz, and can handle power levels up to 1000 W.

BH204N

Abstract: BH403a
Contextual Info: SILICON PIN DIODES High voltage PIN diodes TWO & THREE PORT RF PIN SWITCH MODULES Description This series of SP2T and SP3T RF switches uses high voltage PIN diodes, from the EH80000 family, to achieve very low loss and distortion. Theses switches can be used from 1.5 to 1000 MHz, and can handle power levels up to 1000 W.

Contextual Info: SILICON PIN DIODES High voltage PIN diodes TWO & THREE PORT RF PIN SWITCH MODULES Description This series of SP2T and SP3T RF switches uses high voltage PIN diodes, from the EH80000 family, to achieve very low loss and distortion. Theses switches can be used from 1.5 to 1000 MHz, and can handle power levels up to 1000 W.