RF OUTPUT POWER AMPLIFIER Search Results

powermax

Contextual Info: 8-Module C‐Band Systems SSPA Module Power Level 8-Module RF Output Power 16‐Module C‐Band Systems 7-Module Redundant RF Output Power SSPA Module Power Level 16-Module RF Output Power 15-Module Redundant RF Output Power Psat typical dBm (W)

MHW1916

Contextual Info: MOTOROLA The RF Line MHW1916 Microwave Bipolar Power Amplifier LIFETIME BUY • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 34 dB Typ Efficiency: 24% Min • 50 Ohm Input/Output Impedances 15 W 1930 – 1990 MHz RF POWER AMPLIFIER

Contextual Info: MOTOROLA The RF Line MHW1915 Microwave Bipolar Power Amplifier LIFETIME BUY • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 31 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System 15 W 1930–1990 MHz RF POWER AMPLIFIER

Contextual Info: MOTOROLA The RF Line MHW1815 Microwave Bipolar Power Amplifier LIFETIME BUY • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 32 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System 15 W 1805–1880 MHz RF POWER AMPLIFIER

MHW1815

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1815 Microwave Bipolar Power Am plifier • • 15 W 1805-1890 MHz RF POWER AMPLIFIER Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 32 dB Typ Efficiency: 25% Min 50 Ohm Input/Output System

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1915 Microwave Bipolar Power Am plifier • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 31 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System 15 W 1930-1990 MHz RF POWER AMPLIFIER

Keithley

Contextual Info: Number 2251 Application Note Series Testing RF Power Amplifiers with the Model 2306 Battery/Charger Simulator’s Pulse Current Step Function Introduction Typically, production testing of DC RF power amplifiers involves measuring RF power output and drive current consumption. During testing, the power amplifier is programmed to output a series of RF power levels, then load current measurements

MHW1916

Contextual Info: MOTOROLA Order this document by MHW1916/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1916 Microwave Bipolar Power Amplifier • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 34 dB Typ Efficiency: 24% Min • 50 Ohm Input/Output Impedances

MOTOROLA 638

Abstract: MHW1915
Contextual Info: MOTOROLA Order this document by MHW1915/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1915 Microwave Bipolar Power Amplifier • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 31 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System

MHW1815

Contextual Info: MOTOROLA Order this document by MHW1815/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1815 Microwave Bipolar Power Amplifier • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 32 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System

MHW1915

Contextual Info: MOTOROLA Order this document by MHW1915/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1915 Microwave Bipolar Power Amplifier • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 31 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System

MHW1916

Contextual Info: MOTOROLA Order this document by MHW1916/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1916 Microwave Bipolar Power Amplifier • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 34 dB Typ Efficiency: 24% Min • 50 Ohm Input/Output Impedances

"RF Power Amplifier"

Abstract: MHW1815
Contextual Info: MOTOROLA Order this document by MHW1815/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1815 Microwave Bipolar Power Amplifier • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 32 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System

XP1013-BD

Abstract: DM6030HK TS3332LD XP1013 XP1013-BD-000V XP1013-BD-EV1
Contextual Info: 17.0-26.0 GHz GaAs MMIC Power Amplifier P1013-BD August 2007 - Rev 08-Aug-07 Features Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement 20.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing

ultrasonic 100 khz transmitter

Abstract: BGY208 JR 200 RF TRANSMITTER
Contextual Info: Objective specification Philips Semiconductors UHF amplifier module BGY208 PINNING - SOT388A FEATURES • 6.8 V nominal supply voltage DESCRIPTION PIN • 3.5 W output power • Easy output power control by DC voltage. APPLICATIONS 1 RF input 2 VC 3 Vs 4 RF output

DB35T

Abstract: BGY240
Contextual Info: Philips Semiconductors Preliminary specification UHF amplifier module BGY240 FEATURES PINNING - SOT388C • 3.5 V nominal supply voltage PIN DESCRIPTION • 3 W output power 1 RF input • Easy output power control by DC voltage. 2 Vc Vs RF output 3 APPLICATIONS

msa386

Abstract: BGY207 915 transistor ULTRASONIC MODULE us
Contextual Info: Philips Semiconductors Objective specification UHF amplifier module BGY207 FEATURES PINNING - SOT359A • 4.8 V nominal supply voltage PIN DESCRIPTION • 1.2 W output power 1 RF input • Easy output power control by DC voltage. 2 Vc 3 Vs RF output APPLICATIONS

MSA486

Abstract: uhf 3W amplifier BGY206 0104220
Contextual Info: Philips Semiconductors Preliminary specification UHF amplifier module BGY206 FEATURES PINNING - SOT388A • 4.8 V nominal supply voltage PIN DESCRIPTION • 3 W output power 1 RF input • Easy control of output power by DC voltage. 2 Vc 3 Vs RF output APPLICATIONS

MGD363

Contextual Info: Product specification Philips Semiconductors UHF amplifier module BGY204 PINNING-SOT321B FEATURES • 4.8 V nominal supply voltage PIN DESCRIPTION • 3.2 W output power 1 RF input • Easy control of output power by DC voltage. 2 Vc 3 Vs RF output APPLICATIONS

Contextual Info: MOTOROLA Order this document by MHW1916/D SEMICONDUCTOR TECHNICAL DATA MHW1916 Microwave Bipolar Power Amplifier • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 34 dB Typ Efficiency: 24% Min • 50 Ohm Input/Output Impedances

84-1LMI

Abstract: P1013
Contextual Info: 17.0-26.0 GHz GaAs MMIC Power Amplifier P1013 May 2005 - Rev 05-May-05 Features Chip Device Layout Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement 20.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 17.0-26.0 GHz GaAs MMIC Power Amplifier P1013 May 2005 - Rev 05-May-05 Features Chip Device Layout Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement 20.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing

Mixers

Abstract: MESFET x-band waveguide isolators 10 GHz mixer diode 20 GHz schottky diode
Contextual Info: DOUBLE-SIDEBAND MIXER CIRCUITS SBW SERIES SBB SERIES Waveguide RF, SMA LO/IF DC Biasable, Low LO Power RF INPUT RF INPUT IF OUTPUT LO INPUT IF OUTPUT LO INPUT DB, DM SERIES SBE SERIES General Purpose Even Harmonic 1/2 LO RF INPUT IF OUTPUT RF INPUT IF OUTPUT

Contextual Info: 17.0-26.0 GHz GaAs MMIC Power Amplifier P1013 May 2005 - Rev 05-May-05 Features Chip Device Layout Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement 20.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing