RF MMIC MARK CODE AS Search Results

MGF 1200

Abstract: mitsubishi mgf MGF7170AC
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Technical Note UHF BAND GaAs POWER AMPLIFIER Specifications are subject to change without notice. DESCRIPTION The MGF7170AC is a monolithic microwave integrated circuit for use in CDMA base handheld phone. PIN CONFIGURATION

1715G

Abstract: 17-15G
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Technical Note UHF BAND GaAs POWER AMPLIFIER Specifications are subject to change without notice. DESCRIPTION The M G F7170A C is a monolithic microwave integrated circuit for use in C DM A base handheld phone.

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Technical Note UHF BAND GaAs POWER AMPLIFIER S pecifications are su b je ct to ch a n g e w ith o u t notice. PIN CONFIGURATION TOP VIEW DESCRIPTION T he M G F7170A C is a m onolithic m icrow ave integrated

MGF 1200

Abstract: mitsubishi mgf RF MMIC MARK CODE AS mitsubishi microwave MGF7169C HPA 1200 RF MMIC MARK CODE -03 2SP53
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7169C Technical Note UHF BAND GaAs POWER AMPLIFIER Specifications are subject to change without notice. DESCRIPTION PIN CONFIGURATION TOP VIEW The MGF7169C is a monolithic microwave integrated circuit for use in CDMA base handheld phone.

UMTS800

Contextual Info: !" PRELIMINARY DATASHEET WS2111 Power Amplifier Module for UMTS800 824-849MHz PRELIMINARY DATASHEET (DEVICE : WS2111, 4x4 UMTS800 PAM) Issued Date : August 25th , 2004 S. W. Paek Director, Module Group 1 Preliminary Information WM-0409-07 !" PRODUCT DESCRIPTION

TRANSISTOR SMD MARKING CODE WM

Abstract: TRANSISTOR WM 9 smd electrolytic capacitors marking
Contextual Info: !" PRELIMINARY DATASHEET WS2411 Power Amplifier Module for UMTS1900 1850-1910MHz PRELIMINARY DATASHEET (DEVICE : WS2411, 4x4 UMTS1900 PAM) Issued Date : September 8th, 2004 S. W. Paek Director, Module Group 1 Preliminary Information WM-0409-06 !" PRODUCT DESCRIPTION

Contextual Info: !" PRELIMINARY DATASHEET WS2512 Power Amplifier Module for UMTS2100 1920-1980MHz PRELIMINARY DATASHEET (DEVICE : WS2512, 4x4 UMTS2100 PAM) Issued Date : September 8th, 2004 S. W. Paek Director, Module Group 1 Preliminary Information WM-0409-05 !" PRODUCT DESCRIPTION

RF MMIC MARK CODE E4

Abstract: icc 312 NBB-300 NBB-310 NBB-312 NBB-312-E NBB-312-T1 NBB-400 NLB-300 NLB-310
Contextual Info: NBB-312 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz RoHS Compliant & Pb-Free Product Package Style: MPGA, Bowtie, 3x3, Ceramic Features „ „ „ „ „ Reliable, Low-Cost HBT Design 12.5dB Gain High P1dB of +15.8dBm at 6GHz Single Power Supply Operation

WS1111

Abstract: J-STD-020A J-STD-033
Contextual Info: !" PRELIMINARY DATASHEET WS1111 Power Amplifier Module for CDMA/AMPS 824-849MHz PRELIMINARY DATASHEET (DEVICE : WS1111, 4x4 CDMA/AMPS PAM) Issued Date : Dec. 22, 2003 S. W. Paek Senior MTS, Module Group 1 Preliminary Information WR20310-001 !" PRODUCT DESCRIPTION

era2

Contextual Info: Mini-Circuits - Specification for Amplifier - ERA-2 Amplifier print this page ERA-2 Frequency Dynamic GAIN, dB Maximum Power, dBm MHz Range fL - fU Min. VSWR In In Output Input NF IP3 DC- 3-f 1 dB Min. (no dB dBm u 3 Comp. damage) Typ. Typ. GHz GHz Absolute

transistor wm

Abstract: smd transistor marking 1 da
Contextual Info: !" PRELIMINARY DATASHEET WS1213 Power Amplifier Module for J-CDMA 887-925MHz DATASHEET (DEVICE : WS1213, 4x4 JAPAN CDMA PAM) Issued Date : December 9 , 2004 S. W. Paek Director, Module Group 1 Preliminary Information WM-0410-02 !" PRODUCT DESCRIPTION WS1213

ERA-1 MAR

Abstract: MMIC marking code R
Contextual Info: Mini-Circuits - Specification for Amplifier - ERA-1 Amplifier print this page ERA-1 Frequency Dynamic GAIN, dB Maximum Power, dBm MHz Range fL - fU Min. VSWR In In Output Input NF IP3 DC- 3-f 1 dB Min. (no dB dBm u 3 Comp. damage) Typ. Typ. GHz GHz Absolute

Contextual Info: Mini-Circuits - Specification for Amplifier - ERA-5 Amplifier print this page ERA-5 Frequency Dynamic GAIN, dB Maximum Power, dBm MHz Range fL - fU Min. VSWR In In Output Input NF IP3 DC- 3-f 1 dB Min. (no dB dBm u 3 Comp. damage) Typ. Typ. GHz GHz Absolute

MMIC marking code R

Abstract: ERA-3 RF MMIC MARK CODE -03 vv105 mini
Contextual Info: Mini-Circuits - Specification for Amplifier - ERA-3 Amplifier print this page ERA-3 Frequency Dynamic GAIN, dB Maximum Power, dBm MHz Range fL - fU Min. VSWR 3 3 2,4 75 35 330 3.20 154 Notes: Pin Connections Port RF in RF Out DC Case GND Not Used 1 DC Power

HA22040

Abstract: hitachi a january b february Hitachi DSA0015
Contextual Info: HA22040 GaAs MMIC Down Converter for Micro Wave Application ADE-207-318 Z 1st. Edition December 1999 Features • • • • • Suitable for down converter of Micro Wave Application(1.5 GHz) Low voltage and low current operation (2.7V, 6mA typ.) High conversion gain (10.5 dB typ. @1489MHz)

MMIC marking code U

Contextual Info: Mini-Circuits - Specification for Amplifier - ERA-6 Amplifier print this page ERA-6 Frequency Dynamic GAIN, dB Maximum Power, dBm MHz Range fL - fU Min. VSWR In In Output Input NF IP3 DC- 3-f 1 dB Min. (no dB dBm u 3 Comp. damage) Typ. Typ. GHz GHz Absolute

RxBN

Abstract: CX77133
Contextual Info: Preliminary Information This document contains information on a new product. The parametric information, although not fully characterized, is the result of testing initial devices. CX77133 Power Amplifier Module for CDMA PCS 1850–1910 MHz The CX77133 Power Amplifier Module (PAM) is a fully matched, 6-pin surface mount

Contextual Info: Preliminary Information This document contains information on a new product. The parametric information, although not fully characterized, is the result of testing initial devices. CX77133 ry Power Amplifier 3–4 Volts for CDMA PCS 1850–1910 MHz The CX77133 Power Amplifier is a fully matched 6-pin surface mount module

MAR-7 MMIC

Contextual Info: Mini-Circuits - Specification for Amplifier - MAR-7 Amplifier print this page MAR-7 Frequency GAIN, dB MHz fL - fU Min. Maximum Power, dBm Dynamic Range VSWR Absolute Maximum Rating DC Power Thermal resistance Øjc Output Input NF IP3 CurIn Out I P Device

JEDEC J-STD-033 TAPE AND REEL

Abstract: IPC-7721 IPC 7721
Contextual Info: !" PRELIMINARY DATASHEET WS1113 Power Amplifier Module for CDMA/AMPS 824-849MHz DATASHEET (DEVICE : WS1113, 4x4 PAM) Issued Date : January 29, 2005 1 Preliminary Information WM0501-13 !" PRODUCT DESCRIPTION WS1113 Power Amplifier Module for CDMA/AMPS(824-849MHz)

MAV-11SM

Contextual Info: Mini-Circuits - Specification for Amplifier - MAV-11SM Amplifier print this page MAV-11SM Frequency GAIN, dB MHz fL - fU Maximum Power, dBm Output 1 dB Comp. Min. Input (no damage) Dynamic Range VSWR Absolute Maximum Rating DC Power Thermal resistance Øjc

Contextual Info: Mini-Circuits - Specification for Amplifier - MAR-4 Amplifier print this page MAR-4 Frequency GAIN, dB MHz fL - fU Min. Maximum Power, dBm Dynamic Range VSWR Absolute Maximum Rating DC Power Thermal resistance Øjc Output Input NF IP3 CurIn Out I P Device

MAR-2 MMIC

Contextual Info: Mini-Circuits - Specification for Amplifier - MAR-2 Amplifier print this page MAR-2 Frequency GAIN, dB MHz fL - fU Min. Maximum Power, dBm Dynamic Range VSWR Absolute Maximum Rating DC Power Thermal resistance Øjc Output Input NF IP3 CurIn Out I P Device

MMIC MAR-6

Abstract: MMIC Amplifier mar6 MAR6
Contextual Info: Mini-Circuits - Specification for Amplifier - MAR-6 Amplifier print this page MAR-6 Frequency GAIN, dB MHz fL - fU Min. Maximum Power, dBm Dynamic Range VSWR Absolute Maximum Rating DC Power Thermal resistance Øjc Output Input NF IP3 CurIn Out I P Device