78GHZ Search Results

cha3667aqdg

Abstract: QFN-4x4 AN0017 7-18GHz SMD condensator
Contextual Info: CHA3667aQDG RoHs COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3667aQDG is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial

EC-ECJ006

Abstract: EC-ECJ006-1105
Contextual Info: EC-ECJ006-1105 高信頼性ゴム系電波吸収体（SAシリーズ） SAシリーズはマイクロ波帯／ミリ波帯域電波吸収体です。 シリコーン樹脂をマトリクスとしているため、耐熱性に優れ、しかもアウトガス量を極限まで低減させております。

Contextual Info: CHA3667aQDG RoHS COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3667aQDG is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication

CHA3667

Contextual Info: CHA3667a RoHS COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC Vd Description The CHA3667a is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a

Contextual Info: u n ite d monol i t hi c semiconductors * „ »A " « : * onco« C HA 20633 w.-.-.- 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description 4 The CHA2063a is a two-stage wide band monolithic low noise amplifier. u.m.s. The circuit is manufactured with a

CHA3667aQDG

Abstract: AN0017 MO-220 7-18GHz 7-20GHz qfn 88 718G CHA3667 QFN 64 PACKAGE rth
Contextual Info: CHA3667aQDG RoHS COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3667aQDG is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication

CHA3667

Contextual Info: CHA3667a RoHS COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC Vd Description The CHA3667a is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a

NF 838 G

Contextual Info: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges

DC1346

Contextual Info: PSM G E C P L E S S E Y DS3724-2.2 DC1346/46M/46S MILLIMETRE WAVE GaAs SCHOTTKY BARRIER BEAM LEAD MIXER DIODE The DC1346 GaAs Schottky Barrier Beam Lead Diode is manufactured using advanced epitaxial techniques. The Beam Leads are fabricated using a gold electroplating

CHA3667aQDG

Abstract: AN0017 CHA3667
Contextual Info: CHA3667aQDG RoHs COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3667aQDG is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial

inp hemt power amplifier

Abstract: NS 2P N218 94GHz 100ghz MMIC POWER AMPLIFIER hemt 94GHz amplifier CI0402 N218
Contextual Info: NS 2P N218 CI0402 17 Aug. 2004 Preliminary 78 GHz – 100 GHz High - Power Amplifier Features Wideband operation: 78 GHz – 100 GHz Pout = 17 dBm typ, Pin = 5 dBm P(-1dB) = 11 dBm (typ) Linear Gain: 14 – 23 dB Linear Gain Control Range: 10 dB WR-10 Waveguide Interface

Contextual Info: 37bflS22 GGlflMbD 375 « P L S B 5Ë GEC P L E S S E Y SEMICONDUCTORS DS3 724-2.2 DC1346/46M/46S MILLIMETRE WAVE GaAs SCHOTTKY BARRIER BEAM LEAD MIXER DIODE The DC1346 GaAs Schottky Barrier Beam Lead Diode is manufactured using advanced epitaxial techniques. The

Contextual Info: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges

Contextual Info: CHA2063 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges

NF 838 G

Abstract: CHA2063A
Contextual Info: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges

8-12GHz

Abstract: SS 1603 NF 838 G
Contextual Info: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and

ferrite rod antenna

Abstract: ferrite sheet Z1528 Mg-Zn Ferrites millimeter wave radar MgZn SOFT FERRITE POWDER jis z1528 loop antennas vhf FDK gps antenna DSRC absorber
Contextual Info: EMI SUPPRESSION SHEETS, ABSORBERS & ANECHOIC BOXES EC-ECE001-0208 Products and applicable frequency ranges EMI control products/frequency ranges Frequency 1MHz 10MHz 100MHz CISPR noise reg. 1GHz Onboard 100GHz VCCI, FCC, EN Cellular phones VHF, TV Applications