RF MARKING CODE 5H Search Results

BFR183W

Contextual Info: SIEMENS BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • f j = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

D2996

Abstract: SP-26 tn 7640
Contextual Info: REVISIONS DESCRIPTION LTR A g ß j 5HT-4 P S - ECO 1 0 ,^ 0 0 ^ \o/M ^S e> R E V S W T S 4 *6 » P E R . E C O ( 7 6 C e 4 t ) i xxh $ t % O U T LtKle- P E ^ ^ ^ - O ( 7 3 1 Q ? - ) 3B c ORIGINAL DATE 5? /«? OF DRAWING ¿ '/ ¿ V O DRAFTSMANJ / CHECKER ^

marking code AHF

Contextual Info: SD4931 HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Improved ruggedness V BR DSS > 200 V • Excellent thermal stability • 20:1 all phases load mismatch capability • POUT = 150 W min. with 14.8 dB gain @ 175 MHz • In compliance with the 2002/95/EC European

5670w

Abstract: sm4500
Contextual Info: MIL-E-1/5J 18 February 1981 SUPERSEDING MIL-E-1/5H 10 March 1969 MILITARY SPECIFICATION SHEET ELECTRON TUBE, RECEIVING TYPE 5670W ^ This s p e d f l c a t l o a 1s approved for use by all Depart­ ments and Agencies of the Department of Defense. The complete requirements for procuring the electron tube described herein

stac2942

Contextual Info: STAC2942B RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 350 W min. with 21 dB gain @ 175 MHz • In compliance with the 2002/95/EC European

Contextual Info: STAC4932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz • Pulse conditions: 1 msec - 10%

Contextual Info: STAC4932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz • Pulse conditions: 1 msec - 10%

STAC4932

Abstract: STAC4932B 1715-3
Contextual Info: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10% ■ In compliance with the 2002/95/EC European

Ceramic RF Power and HV Capacitors

Abstract: dwa 108 a kvp 42 DIODE KT 0803 K kvar schematic kvp 03 diode kvp 34 DIODE KVP 79 A dwa 108 Optoelectronics Device data
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book CERAMIC RF POWER AND HV CAPACITORS vishay DRALORIC vsD-db0048-0210 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

STAC3932

Abstract: STAC3932B STAC244B
Contextual Info: STAC3932B HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description

Contextual Info: STAC3932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 580 W typ. with 24.6 dB gain @ 123 MHz • In compliance with the 2002/95/EC European directive

Contextual Info: MCS3142 MCS3142 Dual KEELOQ Technology Encoder Data Sheet Features Overview: Typical Applications: SECURITY MCS3142 is ideal for Remote Keyless Entry RKE applications. These applications include:  2014 Microchip Technology Inc. • • • • • •

220 uh inductors

Abstract: marking 25
Contextual Info: Inductors Chip Inductors &KLS ,QGXFWRUV 6HULHV 7\SH -DSDQ &KLS   ' & $ % 1'  &  (0805) (1008) )  (  (0402) (0603) $  %  (1210) (1812) 1RQ ZRXQG DQG ZLUH ZRXQG W\SH FKLS LQGXFWRUV IRU DXWRPDWLF DQG KLJKGHQVLW\ PRXQWLQJ

sn1102

Abstract: Gunn Diode symbol MCP6541T-I/OT MCP6541U MOBILE BASED THEFT ALARM MCP6541 MCP6542 MCP6543 MCP6544 Gunn Diode
Contextual Info: MCP6541/1R/1U/2/3/4 Push-Pull Output Sub-Microamp Comparators Features: Description: • • • • • • • • • • • The Microchip Technology Inc. MCP6541/1R/1U/2/3/4 family of comparators is offered in single MCP6541, MCP6541R, MCP6541U , single with Chip Select (CS)

AN11276, NTAG Antenna Design Guide

Contextual Info: NTAG213F/216F NFC Forum Type 2 Tag compliant IC with 144/888 bytes user memory and field detection Rev. 3.4 — 12 March 2014 262234 Product data sheet COMPANY PUBLIC 1. General description The NTAG213F and NTAG216F are the new NFC forum compliant Type 2 tag products

NTAG216F

Abstract: originality check
Contextual Info: NTAG213F/216F NFC Forum Type 2 Tag compliant IC with 144/888 bytes user memory and field detection Rev. 3.2 — 10 September 2013 262232 Product data sheet COMPANY PUBLIC 1. General description The NTAG213F and NTAG216F are the new NFC forum compliant Type 2 tag products

AN11276, NTAG Antenna Design Guide

Contextual Info: NTAG213F/216F NFC Forum Type 2 Tag compliant IC with 144/888 bytes user memory and field detection Rev. 3.0 — 18 July 2013 262230 Product data sheet COMPANY PUBLIC 1. General description The NTAG213F and NTAG216F are the new NFC forum compliant Type 2 tag products

6 pin TRANSISTOR SMD CODE 5H

Abstract: mmic MARKING CODE 5h BGB707L7ESD MMIC marking code R transistor smd marking Ag
Contextual Info: T a r ge t D a t a S h e e t , R e v. 1 . 2 , M ar c h 2 00 9 BGB707L7ESD S i G e :C W i d e b an d M M I C L N A w i t h In t e g r a t e d E S D P r o t e c t i on S m a l l S i g n a l D i s c r et e s Edition 2009-03-06 Published by Infineon Technologies AG,

6 pin TRANSISTOR SMD CODE 5H

Abstract: SMD TRANSISTOR MARKING 5H
Contextual Info: T a r ge t D a t a S h e e t , R e v. 1 . 3 , M ay 2 00 9 BGB707L7ESD S i G e :C W i d e b an d M M I C L N A w i t h In t e g r a t e d E S D P r o t e c t i on S m a l l S i g n a l D i s c r et e s Edition 2009-05-04 Published by Infineon Technologies AG,

IP1dB

Abstract: sdars BGB707 SDMB BGB707L7ESD wifi schematic
Contextual Info: Data Sheet, Rev. 3.1, August 2009 BGB707L7ESD SiGe:C Wideband MMIC LNA with Integrated ESD Protection RF & Protection Devices Edition 2009-08-14 Published by Infineon Technologies AG, 85579 Neubiberg, Germany Infineon Technologies AG 2009. All Rights Reserved.

cma 10012

Abstract: cma+10012
Contextual Info: THI R D ANGLE PROJECTI ON l 「 ITEM CODE VMO丁 L目 TAGE ! F山 * lLFT 山 MENH SIONsS … d … ) 4 L _ / 1 1 1 1 D f f f I I f " ICompany name changed Apr . 1 2005 Apr . 1 2006 Apr . 1 2008 日 ec.21 .1 2010 ー ( 4O'C~+ 85'Cート 40 'C~+ 1 05 ' C

cordless phone ic

Abstract: BGB707L7ESD mobile fm system ic transistor 2xw wifi 2.4 ghz pcb layout IP1dB sma smd transistor marking code 24 Germanium Transistor
Contextual Info: Data Sheet, Rev. 3.1, August 2009 BGB707L7ESD SiGe:C Wideband MMIC LNA with Integrated ESD Protection Small Signal Discretes Edition 2009-08-14 Published by Infineon Technologies AG, 85579 Neubiberg, Germany Infineon Technologies AG 2009. All Rights Reserved.

9FF MARKING

Contextual Info: %* 8   BGU8006 SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass Rev. 1 — 11 September 2012 Preliminary data sheet 1. Product profile 1.1 General description The BGU8006 is a Low Noise Amplifier LNA for GNSS receiver applications. It comes as

srf 3417

Abstract: transistor srf 3417 SKY77329 transistor tt 2170 em digrf SKY77519 MARKING CODE EA1 SKY77408 sky72302-21 sky77506
Contextual Info: Product Selection Guide Spring 2007 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high performance analog and mixed signal semiconductors enabling mobile connectivity. The company’s power amplifiers, front-end modules and direct conversion radios are at the heart of many of today’s leading-edge