RF MARKING CODE 5H Search Results

BFR183W

Contextual Info: SIEMENS BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • f j = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

D2996

Abstract: SP-26 tn 7640
Contextual Info: REVISIONS DESCRIPTION LTR A g ß j 5HT-4 P S - ECO 1 0 ,^ 0 0 ^ \o/M ^S e> R E V S W T S 4 *6 » P E R . E C O ( 7 6 C e 4 t ) i xxh $ t % O U T LtKle- P E ^ ^ ^ - O ( 7 3 1 Q ? - ) 3B c ORIGINAL DATE 5? /«? OF DRAWING ¿ '/ ¿ V O DRAFTSMANJ / CHECKER ^

marking code AHF

Contextual Info: SD4931 HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Improved ruggedness V BR DSS > 200 V • Excellent thermal stability • 20:1 all phases load mismatch capability • POUT = 150 W min. with 14.8 dB gain @ 175 MHz • In compliance with the 2002/95/EC European

5670w

Abstract: sm4500
Contextual Info: MIL-E-1/5J 18 February 1981 SUPERSEDING MIL-E-1/5H 10 March 1969 MILITARY SPECIFICATION SHEET ELECTRON TUBE, RECEIVING TYPE 5670W ^ This s p e d f l c a t l o a 1s approved for use by all Depart­ ments and Agencies of the Department of Defense. The complete requirements for procuring the electron tube described herein

stac2942

Contextual Info: STAC2942B RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 350 W min. with 21 dB gain @ 175 MHz • In compliance with the 2002/95/EC European

Contextual Info: STAC4932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz • Pulse conditions: 1 msec - 10%

Contextual Info: STAC4932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz • Pulse conditions: 1 msec - 10%

Contextual Info: STAC3932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 580 W typ. with 24.6 dB gain @ 123 MHz • In compliance with the 2002/95/EC European directive

AN11276, NTAG Antenna Design Guide

Contextual Info: NTAG213F/216F NFC Forum Type 2 Tag compliant IC with 144/888 bytes user memory and field detection Rev. 3.4 — 12 March 2014 262234 Product data sheet COMPANY PUBLIC 1. General description The NTAG213F and NTAG216F are the new NFC forum compliant Type 2 tag products

6 pin TRANSISTOR SMD CODE 5H

Abstract: SMD TRANSISTOR MARKING 5H
Contextual Info: T a r ge t D a t a S h e e t , R e v. 1 . 3 , M ay 2 00 9 BGB707L7ESD S i G e :C W i d e b an d M M I C L N A w i t h In t e g r a t e d E S D P r o t e c t i on S m a l l S i g n a l D i s c r et e s Edition 2009-05-04 Published by Infineon Technologies AG,

cma 10012

Abstract: cma+10012
Contextual Info: THI R D ANGLE PROJECTI ON l 「 ITEM CODE VMO丁 L目 TAGE ! F山 * lLFT 山 MENH SIONsS … d … ) 4 L _ / 1 1 1 1 D f f f I I f " ICompany name changed Apr . 1 2005 Apr . 1 2006 Apr . 1 2008 日 ec.21 .1 2010 ー ( 4O'C~+ 85'Cート 40 'C~+ 1 05 ' C

cordless phone ic

Abstract: BGB707L7ESD mobile fm system ic transistor 2xw wifi 2.4 ghz pcb layout IP1dB sma smd transistor marking code 24 Germanium Transistor
Contextual Info: Data Sheet, Rev. 3.1, August 2009 BGB707L7ESD SiGe:C Wideband MMIC LNA with Integrated ESD Protection Small Signal Discretes Edition 2009-08-14 Published by Infineon Technologies AG, 85579 Neubiberg, Germany Infineon Technologies AG 2009. All Rights Reserved.

9FF MARKING

Contextual Info: %* 8   BGU8006 SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass Rev. 1 — 11 September 2012 Preliminary data sheet 1. Product profile 1.1 General description The BGU8006 is a Low Noise Amplifier LNA for GNSS receiver applications. It comes as

srf 3417

Abstract: transistor srf 3417 SKY77329 transistor tt 2170 em digrf SKY77519 MARKING CODE EA1 SKY77408 sky72302-21 sky77506
Contextual Info: Product Selection Guide Spring 2007 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high performance analog and mixed signal semiconductors enabling mobile connectivity. The company’s power amplifiers, front-end modules and direct conversion radios are at the heart of many of today’s leading-edge

emerson rosemount

Abstract: DPCO 05ATEX2130X PA66 - GF 25 relay
Contextual Info: Product Data Sheet February 2015 00813-0100-4030, Rev GE Rosemount 2120 Full-featured Vibrating Fork Liquid Level Switch  Designed for operation in process temperatures of –40 to 302 °F –40 to 150 °C  Adjustable switching delay for turbulent or

VJ HIFREQ

Abstract: VJ Commercial VJ NON-MAGNETIC SERIES FOR EPOXY BONDING VJ....W1BC Ultra Small Series 0201 GA....34G Automotive MLCC VJ....W1BC Basic Commodity
Contextual Info: V ishay I ntertechnolo g y, I nc . I INNOVAT AND TEC O L OGY N HN Multilayer Ceramic Chip Capacitors O 19 62-2012 Capacitors - Focus Products Multilayer Ceramic Chip Capacitors Products: • • • • • • • Basic Commodity BME/NME Technology

example C codes pic18f for mmc card

Abstract: burglar alarm based pic diagram object counter with error detector project Manchester c source code using PIC
Contextual Info: HCS362 KEELOQ Code Hopping Encoder FEATURES PACKAGE TYPES Security PDIP, SOIC S0 1 S1 2 S2 3 S3/RFEN 4 TSSOP Operation • • • • • • 2.0V – 6.3V operation Four button inputs 15 functions available Selectable baud rates and code word blanking

Contextual Info: MCP631/2/3/4/5/9 24 MHz, 2.5 mA Op Amps Features: Description: • • • • • • • • The Microchip Technology, Inc. MCP631/2/3/4/5/9 family of operational amplifiers features high gain bandwidth product 24 MHz, typical and high output short circuit current (70 mA, typical). Some also provide a

Contextual Info: MCP660/1/2/3/4/5/9 60 MHz, 6 mA Op Amps Features Description • • • • • • • • The Microchip Technology, Inc. MCP660/1/2/3/4/5/9 family of operational amplifiers op amps features high gain bandwidth product (60 MHz, typical) and high output short circuit current (90 mA, typical). Some also

Contextual Info: ;6 21  BGU6005/N2 Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass Rev. 1 — 24 March 2014 Preliminary data sheet 1. Product profile 1.1 General description The BGU6005/N2 is a Low Noise Amplifier LNA for GNSS receiver applications in a plastic leadless 6-pin, extremely small SOT886 package. The BGU6005/N2 requires only

XPOSYS

Abstract: Germanium Transistor X-GOLD
Contextual Info: BGB707L7ESD SiGe:C Wideband MMIC LNA with Integrated ESD Protection Data Sheet Revision 3.2, 2010-06-30 RF & Protection Devices Edition 2010-06-30 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

Contextual Info: BGB707L7ESD SiGe:C Wideband MMIC LNA with Integrated ESD Protection Data Sheet Revision 3.2, 2010-06-30 RF & Protection Devices Edition 2010-06-30 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

AN177

Abstract: AN181 BGB707L7ESD C166 Germanium Transistor
Contextual Info: BGB707L7ESD SiGe:C Wideband MMIC LNA with Integrated ESD Protection Data Sheet Revision 3.2, 2010-06-30 RF & Protection Devices Edition 2010-06-30 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

Contextual Info: MCP6141/2/3/4 600 nA, Non-Unity Gain Rail-to-Rail Input/Output Op Amps Features: Description: • • • • • • • • • The MCP6141/2/3/4 family of non-unity gain stable operational amplifiers op amps from Microchip Technology Inc. operate with a single supply voltage as