RF CAPACITOR PERFORMANCE DATA Search Results

gic 1990

Abstract: TQ5M31
Contextual Info: WIRELESS COMMUNICATIONS DIVISION TQ5M31 DATA SHEET Vdd Vdd IF Gain/IP3/current adjustment GIC GND LO RF 50 ohm LO INPUT 3V Downconverter Mixer IC IF OUT GND 50 ohm RF INPUT Features §Single 3V Operation §Adjustable Gain/IP3/Current §Low Current Operation

Contextual Info: 2 HARRIS H M R -1 0 5 0 4 GaAs MMIC Amplifier 0 .5 -3 .0 GHz PRODUCT DATA Features * Active Bias Eliminates Need for Off-Chip Chokes Ti/Pt/Au Gate Metallization for Enhanced Reliability * On-Chip Source Resistor Network for Easy Bias Point Selection Dielectric Scratch/Short Circuit Protection

Contextual Info: r H MR-10502 GaAs Analog Integrated Circuit 0.5 - 5.0 GHz Monolithic Amplifier PRODUCT DATA JANUARY 1987 HARRIS MICROWAVE SEMICONDUCTOR FEATURES □ -1.45 .057 £ Excellent Broadband Performance, Minimum 9 dB Gain, 0.5-5 GHz, ±0.75 dB Gain Flatness 0.85

EMCORE photodiode

Abstract: 2609c balun transformer EMCORE photodiode balun PIN Photodiode For CATV Receiver emcore etc1-1-13 Ferronics GaAs photodiode Emcore TGA 2803 2803 20 pin QFN
Contextual Info: Product Data Sheet January 15, 2008 CATV TIA/Gain Block TGA2803-SM Key Features and Performance • • • • TGA 2803 Top View Frequency Range: 40MHz - 1GHz 20 dB Flat Gain 800 Ω Transimpedance * <5pA/ √Hz Equivalent Input Noise Current * 1.5 dB 75 Ω Noise Figure

Contextual Info: WIRELESS COMMUNICATIONS DIVISION TQ7131 DATA SHEET Bias Control 3V HBT POWER AMPLIFIER Bias Control Features High Efficiency Excellent ACP and ALT Quiescent current switch Single +3.0V operation Product Description: Low Quiescent Current The TQ7131 is a 3V, 2 stage InGaP HBT Power Amplifier designed for use in mobile

D20BU

Abstract: 40 hmr 120 101M HMR-10502
Contextual Info: _ Q Q r v _ HMR-10502 GaAs Analog Integrated Circuit 0.5 - 5.0 GHz Monolithic Amplifier PRODUCT DATA JANUARY 1987 HARRIS MICROWAVE SEMICONDUCTOR FEATURES Excellent Broadband Performance, □ □ Minimum 9 dB Gain, 0.5-5 GHz,

P2110

Abstract: structural health monitoring powercast Antenna resistor activation energy airbag
Contextual Info: Product Datasheet P2110 – 915 MHz RF Powerharvester Receiver DESCRIPTION APPLICATIONS The Powercast P2110 Powerharvester receiver is an RF energy harvesting device that converts RF to DC. Housed in a compact SMD package, the P2110 receiver provides RF

Contextual Info: AWB312 AWB312 Data Sheet 5 ~ 1200 MHz Wide-band CATV Linear Amplifier MMIC 1. Product Overview 1.1 General Description AWB312, a wide-band linear amplifier MMIC, has high linearity and low noise over a wide range of frequency from 5 MHz to 1200 MHz, being suitable for use in the fiber receiver, distribution amplifiers and drop amplifiers

Contextual Info: BlueNRG Bluetooth low energy wireless network processor Datasheet - production data • On-chip non-volatile Flash memory  AES security co-processor  Low power modes  16 or 32 MHz crystal oscillator  12 MHz ring oscillator WLCSP34 QFN32  32 kHz crystal oscillator

Contextual Info: Document Number: MMZ25332B Rev. 0, 5/2012 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMZ25332BT1 High Efficiency/Linearity Amplifier The MMZ25332B is a 2-stage, high linearity InGaP HBT broadband amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MS031NR1 AFT05MS031GNR1 Designed for mobile two-way radio applications with frequencies from

C8450

Abstract: MRF5S4140H
Contextual Info: Document Number: MRF5S4140H Rev. 1, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these

N/A9M07

Contextual Info: Document Number: AFT09MS007N Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N−Channel Enhancement−Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two−way radio applications with frequencies from

MRF5S4140H

Contextual Info: Document Number: MRF5S4140H Rev. 0, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these

schematic diagram 48v charger

Abstract: schematic diagram 48V power supply schematic diagram 48V automatic battery charger schematic diagram 48v dc charger 48v battery charger schematic diagram schematic diagram 48v battery charger RF2131
Contextual Info: RF2131 2 HIGH EFFICIENCY AMPS/ETACS AMPLIFIER Typical Applications • AMPS/ETACS Cellular Handsets • Commercial and Consumer Systems • CDPD Portable Data Cards • Portable Battery-Powered Equipment 2 Product Description -A- The RF2131 is a high-power, high-efficiency amplifier IC.

Contextual Info: RF2131  +,*+ ,&,(1&< $036(7$&6 $03/,),(5 7\SLFDO $SSOLFDWLRQV • Commercial and Consumer Systems • CDPD Portable Data Cards • Portable Battery-Powered Equipment 2 POWER AMPLIFIERS • AMPS/ETACS Cellular Handsets • 900MHz ISM Band Equipment 3URGXFW 'HVFULSWLRQ

Contextual Info: RF2131 2 HIGH EFFICIENCY AMPS/ETACS AMPLIFIER Typical Applications • AMPS/ETACS Cellular Handsets • Commercial and Consumer Systems • CDPD Portable Data Cards • Portable Battery-Powered Equipment 2 Product Description -A- The RF2131 is a high-power, high-efficiency amplifier IC.

ATC600F241JT

Abstract: GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of

Contextual Info: AWG3020 AWG3020 Data Sheet 50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description AWG3020, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a wide range of frequency from 50 MHz to 4000 MHz, being suitable for use in both receiver and transmitter of

Contextual Info: SEMICONDUCTOR WIRELESS COMMUNICATIONS DIVISION TQ9222 DATASHEET Dual-Band TDMA LNA/Downconverter 1C 800 M XR800 Features 800 Product Description The TQ9222 is a 3- V, RF receiver 1C designed specifically for dual-band TDMA applications. Its RF performance meets the requirements of products designed to

D260-4118-0000

Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

Contextual Info: BlueNRG Bluetooth low energy wireless network processor Datasheet - production data • On-chip non-volatile Flash memory  AES security co-processor  Low power modes  16 or 32 MHz crystal oscillator  12 MHz ring oscillator WLCSP34 QFN32  32 kHz crystal oscillator

Contextual Info: GaAs MMIC CGB240B Preliminary Data Sheet • 2-stage InGaP HBT power amplifier for WLAN and Bluetooth applications • ACPR / IP3 tested to be compliant with IEEE802.11b standard • Fully compliant with Bluetooth requirements dual-mode use • Single voltage supply

Contextual Info: AWG3023 AWG3023 Data Sheet 50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description AWG3023, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a wide range of frequency from 50 MHz to 4000 MHz, being suitable for use in both receiver and transmitter of