RF CAPACITOR PERFORMANCE DATA Search Results

"parasitic capacitance" smd

Abstract: 0603size
Contextual Info: High-Performance, High-Precision 0603 SMD RF Capacitor/HPC 0603A The industry’s first silicon 0603-size SMD RF capacitor – 0.8 pF-560 pF, 1% tolerance, capacitance stability from 1 MHz to 15 GHz FEATURES • New technology surface-mount capacitor based on a special

Contextual Info: PRODUCT SHEET V I S H A Y I N T E R T E C H N O L O G Y, I N C . CAPACITORS Model HPC0402A High Performance, High Precision Surface Mount 0402 Capacitor for RF Applications Industry first: • Silicon-based SMD RF capacitor • 0402-sized device to offer accuracy over 22 pF

Rogers 4350B substrate

Abstract: Presidio Components CAP loss tangent of Rogers 4350B MVP0505 presidio X7R
Contextual Info: ULTRA-PORCELAIN RF CAPACITOR CATALOG Catalog 7100 PRESIDIO COMPONENTS, INC. HIGH PERFORMANCE, HIGH RELIABILITY CERAMIC CAPACITORS ABOUT PRESIDIO Presidio Components has been an industry leader in the design and manufacture of ceramic capacitors since 1980.

PORCELAIN

Contextual Info: ULTRA-PORCELAIN RF CAPACITOR CATALOG Catalog 7100 PRESIDIO COMPONENTS, INC. HIGH PERFORMANCE, HIGH RELIABILITY CERAMIC CAPACITORS ABOUT PRESIDIO Presidio Components has been an industry leader in the design and manufacture of ceramic capacitors since 1980.

Contextual Info: ULTRA-PORCELAIN RF CAPACITOR CATALOG Catalog 7100 PRESIDIO COMPONENTS, INC. HIGH PERFORMANCE, HIGH RELIABILITY CERAMIC CAPACITORS ABOUT PRESIDIO Presidio Components has been an industry leader in the design and manufacture of ceramic capacitors since 1980.

HH10D

Abstract: "Humidity Sensor" humidity sensor capacitor Relative Humidity Sensor pin diagram of HUMIDITY relative humidity sensor circuit diagram HH-10D 212RH 3 pin humidity sensor
Contextual Info: Hope RF HH10D.doc HUMIDITY SENSOR MODULE 2006-12-14 PRELIMINARY - - Version: 1.0 Relative humidity sensor Two point calibrated with capacitor type sensor, excellent performance Frequency output type, can be easily integrated with user application system Very low power consumption

RF Capacitor Performance Data for Multilayer

Abstract: RF Capacitor Performance Data PORCELAIN CAPACITOR PORCELAIN MCM01-001 MCM01 MC18FD471J MC22FF102J MC22FF471J capacitors esr
Contextual Info: Types MCM and MIN Multilayer Clad Capacitors RF Capacitor Performance Data for Multilayer Types MC & MCH Chips and Clad SMT Types MIN & MCM Sizes 1812 to 4640 100 pF; 470 pF; 1000 pF; 1 pF; 10 pF ESR vs. Frequency RMS Current vs. Frequency Q vs. Frequency

Rogers 4350B

Abstract: MVP0505 Presidio Components microwave product catalog Rogers 4350B substrate
Contextual Info: ULTRA-PORCELAIN RF CAPACITOR CATALOG Catalog 7100 PRESIDIO COMPONENTS, INC. HIGH PERFORMANCE, HIGH RELIABILITY CERAMIC CAPACITORS ABOUT PRESIDIO Presidio Components has been an industry leader in the design and manufacture of ceramic capacitors since 1980. We are dedicated to excellence in manufacturing,

RT9030A

Abstract: RT9030
Contextual Info: RT9030A 300mA, Low Input Voltage, Low Dropout, Low Noise UltraFast Without Bypass Capacitor CMOS LDO Regulator General Description The RT9030A is a high-performance, 300mA LDO regulator, offering extremely high PSRR and ultra-low dropout. Ideal for portable RF and wireless applications with demanding

Contextual Info: RT9030 150mA, Low Input Voltage, Low Dropout, Low Noise UltraFast Without Bypass Capacitor CMOS LDO Regulator General Description Features The RT9030 is a high-performance, 150mA LDO regulator, offering extremely high PSRR and ultra-low dropout. Ideal for portable RF and wireless applications with demanding

gic 1990

Abstract: TQ5M31
Contextual Info: WIRELESS COMMUNICATIONS DIVISION TQ5M31 DATA SHEET Vdd Vdd IF Gain/IP3/current adjustment GIC GND LO RF 50 ohm LO INPUT 3V Downconverter Mixer IC IF OUT GND 50 ohm RF INPUT Features §Single 3V Operation §Adjustable Gain/IP3/Current §Low Current Operation

gic 1990

Abstract: TQ5M31 890 sot236
Contextual Info: TQ5M31 Product Data Sheet 3V Downconverter Mixer IC Features Functional Block Diagram Vdd Vdd IF Gain/IP3/current adjustment GIC GND LO RF 50 ohm LO INPUT • • • • • • • • IF OUT GND 50 ohm RF INPUT Single 3V Operation Adjustable Gain/IP3/Current

Z6 3pin

Abstract: J262 AFT09MS007NT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS007N Rev. 1, 4/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this

Contextual Info: Document Number: MMRF1021N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this

25 HMR 60

Abstract: 10504 LABS
Contextual Info: SAMSUNG ELECTRONICS INC g HARRIS bOE D 7 Ii b M m E G ü i n m t o i H M R -10504 GaAs MMIC Amplifier 0.5 - 3.0 GHz PRODUCT DATA Features • Active Bias Eliminates Need for Off-Chlp Chokes Ti/Pt/Au Gate Metallization for Enhanced Reliability • On-Chip Source Resistor Network for Easy

Contextual Info: r H MR-10502 GaAs Analog Integrated Circuit 0.5 - 5.0 GHz Monolithic Amplifier PRODUCT DATA JANUARY 1987 HARRIS MICROWAVE SEMICONDUCTOR FEATURES □ -1.45 .057 £ Excellent Broadband Performance, Minimum 9 dB Gain, 0.5-5 GHz, ±0.75 dB Gain Flatness 0.85

Contextual Info: Product Data Sheet January 15, 2008 CATV TIA/Gain Block TGA2803-SM Key Features and Performance • • • • TGA 2803 Top View Frequency Range: 40MHz - 1GHz 20 dB Flat Gain 800 Ω Transimpedance * <5pA/ √Hz Equivalent Input Noise Current * 1.5 dB 75 Ω Noise Figure

EMCORE photodiode

Abstract: 2609c balun transformer EMCORE photodiode balun PIN Photodiode For CATV Receiver emcore etc1-1-13 Ferronics GaAs photodiode Emcore TGA 2803 2803 20 pin QFN
Contextual Info: Product Data Sheet January 15, 2008 CATV TIA/Gain Block TGA2803-SM Key Features and Performance • • • • TGA 2803 Top View Frequency Range: 40MHz - 1GHz 20 dB Flat Gain 800 Ω Transimpedance * <5pA/ √Hz Equivalent Input Noise Current * 1.5 dB 75 Ω Noise Figure

GRM188R71H104KA93D

Abstract: M31382 is680
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG20241H Rev. 1, 7/2014 Driver or Pre-driver Amplifier for Doherty Power Amplifiers MMG20241HT1 GaAs Enhancement Mode pHEMT The MMG20241H is a 1/4 W high gain amplifier designed as a driver or pre-driver for Doherty power amplifiers in wireless infrastructure equipment

Contextual Info: WIRELESS COMMUNICATIONS DIVISION TQ7131 DATA SHEET Bias Control 3V HBT POWER AMPLIFIER Bias Control Features High Efficiency Excellent ACP and ALT Quiescent current switch Single +3.0V operation Product Description: Low Quiescent Current The TQ7131 is a 3V, 2 stage InGaP HBT Power Amplifier designed for use in mobile

D20BU

Abstract: 40 hmr 120 101M HMR-10502
Contextual Info: _ Q Q r v _ HMR-10502 GaAs Analog Integrated Circuit 0.5 - 5.0 GHz Monolithic Amplifier PRODUCT DATA JANUARY 1987 HARRIS MICROWAVE SEMICONDUCTOR FEATURES Excellent Broadband Performance, □ □ Minimum 9 dB Gain, 0.5-5 GHz,

1030mhz oscillator

Abstract: ic lg 631 967m TQ3131 TQ5131 LG 631 IC
Contextual Info: WIRELESS COMMUNICATIONS DIVISION TQ5131 RF IN VDD GND LO IN DATA SHEET 3V Cellular Band CDMA/AMPS RFA/Mixer IC Mode Select/ LO Input IFA Gain Select GIC CDMA IF IF Out Out IF Out AMP's IF Out Features Small size: SOT23-8 Single 3V operation Product Description

MO-220

Abstract: TQ7131
Contextual Info: WIRELESS COMMUNICATIONS DIVISION TQ7131 DATA SHEET 3.4V HBT POWER AMPLIFIER Bias Control Bias Control Features High Efficiency Excellent ACP and ALT Quiescent current switch Product Description: Single +3.0V operation The TQ7131 is a 3.4V, 2 stage InGaP HBT Power Amplifier designed for use in mobile

Contextual Info: BlueNRG Bluetooth low energy wireless network processor Datasheet - preliminary data • High performance, ultra-low power Cortex-M0 32-bit based architecture core  On-chip non-volatile Flash memory  AES security co-processor  Low power modes  16 or 32 MHz crystal oscillator