RF AMPLIFIER GHZ Search Results

MBC13916

Abstract: MBC13916T1 MRFIC0916 motorola zc 527 Motorola Zc 34
Contextual Info: Freescale Semiconductor, Inc. Order this document by MBC13916/D MBC13916 The RF Building Block Series Freescale Semiconductor, Inc. General Purpose SiGe:C RF Cascode Amplifier GENERAL PURPOSE SiGe:C RF CASCODE AMPLIFIER The MBC13916 is a cost–effective, high isolation amplifier fabricated with

BFR91

Abstract: transistor BFR91
Contextual Info: BFR91 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency

CMOS Gilbert Cell Mixer

Abstract: gilbert cell sum Gilbert Cell C1995 LMX2216 LMX2216M LMX2216MX M16A gilbert mixer 1 to 3 GHz bandpass filter wide band
Contextual Info: LMX2216 0 1 GHz to 2 0 GHz Low Noise Amplifier Mixer for RF Personal Communications General Description The LMX2216 is a monolithic integrated low noise amplifier LNA and mixer suitable as a first stage amplifier and downconverter for RF receiver applications The wideband operating capabilities of the LMX2216 allow it to function over

transistor BFT 95

Abstract: transistor BC 171 bft95 pnp transistor 3609 TRANSISTOR MS 173 TRANSISTOR 3611 transistor bc 238 b transistor bf 171 MARKING CODE AM sot-23 telefunken transistor
Contextual Info: TELEFUNKEN ELECTRONIC SIC D ▼ • 812001b 000531!, 8 «ALG S T~3/-'~ m iBraaBSIEI» electronic BPr qB B FT 95 i Creative Technologies Silicon PNP Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier !

SSPA

Abstract: SSPA C Band SSPA-1722-80 5.7 GHz power amplifier x band high power amplifier base station high power amplifier power amplifier s band ghz mhz
Contextual Info: Solid State Power Amplifier High Power, Broadband, L & S Band Solid State RF Amplifier • • • • Aethercomm P/N SSPA 1722-80 is a high power, solid state RF amplifier SSPA which covers in excess of 500 MHz of bandwidth from 1.7 to 2.2 GHz. This Class AB SSPA offers greater than 30

RAYTHEON

Abstract: RMLA3565A-58 RO4003
Contextual Info: RF Components RMLA3565A-58 Wideband Low Noise MMIC Amplifier PRODUCT INFORMATION Description The Raytheon RF Components RMLA3565A-58 is a single bias wideband low noise MMIC amplifier designed for the 3.5 - 6.5 GHz frequency range. The MMIC requires no external matching circuits or

UPD5702TU-A

Abstract: HS350 VP215 BVDSS1
Contextual Info: Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT µPD5702TU 3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The µPD5702TU is a silicon laterally diffused LD MOSFET IC designed for use as power amplifier 1.9 GHz PHS

SOT-23 marking 717

Abstract: un 1044 Telefunken u 257
Contextual Info: Temic BFR92/BFR92R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain

Contextual Info: 12.0-16.0 GHz GaAs MMIC Power Amplifier P1043-BD May 2008 - Rev 05-May-08 Features 32 dBm Saturated RF Power 41 dBm Output IP3 Linearity 17 dB Gain Control On-Chip Power Detector 100% RF Testing General Description The XP1043-BD is a linear power amplifier that operates

QAM64

Abstract: 6039 marking
Contextual Info: AH314 2.3-2.9 GHz WiMAX 2W Driver Amplifier • EVM <2.5 %@ 24 dBm Pout • Internal Active Bias Vpd2 Vcc2 Applications • 802.16 WiMAX infrastructure • WiBro infrastructure RF OUT GND / NC RF OUT RF IN GND / NC RF OUT RF IN GND / NC GND / NC GND / NC • Lead-free/RoHS-compliant

RAYTHEON

Abstract: PCS1900 RMBA19500-58 RMBA19500A RMBA19500A-58 RCI-0603-1101J
Contextual Info: RF Components RMBA19500A-58 PCS1900 2 Watt GaAs MMIC Power Amplifier PRODUCT INFORMATION The RMBA19500A-58 is a highly linear Power Amplifier. The two stage circuit uses Raytheon RF Description Components’ pHEMT process. It has been designed for use as a driver stage for PCS1900 base

Contextual Info: RF5603 RF56033.0V to 5.0 V, 3.3GHz to 3.8GHz Linear Power Amplifier 3.0V TO 5.0V, 3.3GHz TO 3.8GHz LINEAR POWER AMPLIFIER Features Single 3.0V to 5.0V Supply  32dB Small Signal Gain Typ. GND VCC2 VCC2 14 13 12 RF OUT 1st Stage Input Match RF IN 2 

Contextual Info: Solid State Power Amplifier Medium Power, Broadband Solid State RF Amplifier Aethercomm P/N SSPA-0.6-2.0-20 was designed to be used as a laboratory amplifier for all medium power testing needs from 600 MHz to 2.0 GHz. This SSPA can also be used in any application where

VC06AG18120

Abstract: 0603 3pf capacitor VC06AG18120YAT ceramic capacitor footprint 0402 dimensions Capacitor ceramic 0402 0.2 pf variable resistor varistor documentation Passive filters used in wireless lans 1B SOT23 VC06AG183R0YAT transistor LN 1B
Contextual Info: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the

RF POWER marking 556

Abstract: motorola 6135 transistor motorola 351 MRFIC0916
Contextual Info: MOTOROLA Order this document by MRFIC0916/D SEMICONDUCTOR TECHNICAL DATA The MRFIC Line General Purpose RF Cascode Amplifier MRFIC0916 The MRFIC0916 is a cost–effective, high isolation cascode silicon monolithic amplifier in the industry standard SOT–143 surface mount package designed for general purpose RF applications. On chip bias circuitry sets the

RAYTHEON

Abstract: RMPA2550-252 54Mbps IC155
Contextual Info: Raytheon RMPA2550-252 RF Components 2.4-2.5 GHz and 5.15-5.35 GHz Dual Band InGaP HBT Linear Power Amplifier ADVANCED INFORMATION Description Features Absolute Ratings1 The RMPA2550-252 is a dual frequency band power amplifier designed for high performance WLAN

RF5515

Abstract: lna_en LNA in WLAN a1 lna 2.2mmx2.2mmx0.5mm
Contextual Info: RF5515 RF5515 4.9GHz to 5.85GHz Low Noise Amplifier with Enable 4.9GHz TO 5.85GHZ LOW NOISE AMPLIFIER WITH ENABLE „ „ „ 4.9GHz to 5.85GHz Operation 2.3V to 4.8V Single Supply 1.6dB Noise Figure 11dB Typical Gain 6 N/C N/C 2 5 RF OUT 3 LNA EN „ 7 RF IN 1

24-30GHz

Abstract: 4430G 74166 applications TQP2420B 4230G
Contextual Info: TQP2420B PRELIMINARY DATASHEET WLAN PRODUCTS Vcc1 N/C N/C 12 11 10 RF In 1 9 RF Out / Vc2 N/C 2 8 RF Out / Vc2 Vref Features Bias Controller 3 2.4GHz ISM Band InGaP HBT Power Amplifier 7 4 5 6 Vcc N/C GND High-Efficiency, 2.4 GHz ISM Band PA for 802.11b WLAN Systems

DA2900

Abstract: RAYTHEON Power Amplifier MMIC 2.6 GHz DA29000
Contextual Info: # 425430398 RMDA29000 27-31 GHz Driver Amplifier MMIC ADVANCED INFORMATION Description Features The Raytheon RF Components RMDA29000 is a high efficiency driver amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications.

Contextual Info: Solid State Power Amplifier High Power, Broadband, S Band Solid State RF Amplifier • Aethercomm P/N SSPA 2.7-3.2-30 is a high power S 30 Watts Minimum Linear Power @ 85 C Base Plate band solid state power amplifier that operates from 2.7 to 3.2 GHz. It offers a minimum of 30 watts of

6 ghz amplifier 10w

Abstract: Characteristic of mesfet MA08509D Gaas Power Amplifier 10W
Contextual Info: MA08509D 10W Power Amplifier Die 8.0-11 GHz FEATURES • • • • Preliminary Release V DD VDD Broadband Performance 32% Typical Power Added Efficiency 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process RF IN RF OUT VGG Description Maximum Ratings (T

BFW92

Contextual Info: BFW92 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92 Marking: BFW92 Plastic case TO 50

Transistor A23

Abstract: DS070515 RF5125 RF5125PCBA-41X a23 power transistor
Contextual Info: RF5125 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC NC VC1 NC RoHS Compliant & Pb-Free Product Package Style: QFN, 16-Pin, 3 x 3 16 15 14 13 NC 1 12 RF OUT/ VC2 RF IN 2 11 RF OUT Features „ „ 28dB Typical Small Signal Gain 10 RF OUT RF IN 3 50Ω Input and Interstage Matching

X band 5-bit phase shifter

Abstract: digital phase shifter mhz MA03503D x-Band High Power Amplifier phase shifter
Contextual Info: MA03503D X-Band Parallel Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die High Dynamic Range Features •= •= Advanced Information Phase Shifter /Attenuator 8 to 11 GHz Operation 50 Ω Input Impedance RF Out RF In •= Self-Aligned MSAG MESFET Process