RF AMPLIFIER BROAD BAND Search Results

frankfurt

Abstract: TFB2208
Contextual Info: Preliminary Technical Data TFB2208T M EMegaxess G AGmbH X Deutschland ESS Edition 09/00 2.2GHz RF Broad Band Amplifier Short Description Features • Single ended input 50Ω The bipolar integrated circuit TFB2208T is a RF broad band amplifier for several

frankfurt oder

Abstract: 617db-1018 Megaxess TFB2208 frankfurt TFB2208T
Contextual Info: Preliminary Technical Data TFB2208T M EMegaxess G AGmbH X Deutschland ESS Edition 09/00 2.2GHz RF Broad Band Amplifier Short Description Features • Single ended input 50Ω The bipolar integrated circuit TFB2208T is a RF broad band amplifier for several

Contextual Info: Mil TetraFET Etti IMI SEME D1011UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 28V - 1GHz SINGLE ENDED 4. FEATURES • SIMPLIFIED AMPLIFIER DESIGN -Vj * • SUITABLE FOR BROAD BAND APPLICATIONS S08PACKAGE

Contextual Info: lili TetraFET 1111 SEME D2004UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W -28V-1GHZ PUSH-PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DK PIN1 SOURCE COMMON

sWG 24 copper wire

Contextual Info: TetraFET D1094UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 400MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS

dmos rf fet 4w 28v

Abstract: D1083UK
Contextual Info: TetraFET D1083UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm inches GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W – 28V – 200MHz SINGLE ENDED 4 FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS

D1093UK

Contextual Info: TetraFET D1093UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS

D1094UK

Contextual Info: TetraFET D1094UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 400MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS

D2294UK

Abstract: idq06
Contextual Info: TetraFET D2294UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 15W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS

D2293UK

Contextual Info: TetraFET D2293UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS

Contextual Info: nil Vrrr= TetraFET mi D2010UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W-28V-1GHZ SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DP PIN 1 SOURCE

D2201UK

Contextual Info: TetraFET D2201UK.S METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS

dmos rf fet 4w 28v

Abstract: D1083UK
Contextual Info: TetraFET D1083UK SEME LAB ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm inches GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W – 28V – 200MHz SINGLE ENDED 4 FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND

Contextual Info: mi TetraFET =&= INI D1211UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 0 W - 12.5V -500MHz SINGLE ENDED J JW FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS S08PACKAGE

Contextual Info: TetraFET SEME D1083UK LAB ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm inches GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W – 28V – 200MHz SINGLE ENDED 4 FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND

Contextual Info: nil Vrr r = mi TetraFET D2005UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W - 28V - 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DP PIN 1

D2294UK

Contextual Info: TetraFET D2294UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 15W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS

42 swg enamelled copper wire

Abstract: copper wire 42 SWG
Contextual Info: TetraFET D1093UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS

Contextual Info: nil Vrr r = mi TetraFET D2001UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W - 28V - 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DP PIN 1

D2020UK

Contextual Info: PR EL IM INA RY TetraFET D2020UK–P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss

Contextual Info: TetraFET D2017UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED C B A ! D 2 p ls FEATURES • SIMPLIFIED AMPLIFIER DESIGN E • SUITABLE FOR BROAD BAND APPLICATIONS

VDB50

Contextual Info: PR EL IM INA RY TetraFET D1011UK-P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss

Contextual Info: PR EL IM INA RY TetraFET D1211UK-P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss

D2019

Contextual Info: PR EL IM INA RY TetraFET D2019UK-p METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss