S08PACKAGE Search Results

Contextual Info: nil Vrrr= TetraFET mi D1011UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W-28V-1GHZ SINGLE ENDED I D f C A I FEATURES • SIMPLIFIED AMPLIFIER DESIGN G • SUITABLE FOR BROAD BAND APPLICATIONS S08PACKAGE

Contextual Info: Mil TetraFET Etti IMI SEME D1011UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 28V - 1GHz SINGLE ENDED 4. FEATURES • SIMPLIFIED AMPLIFIER DESIGN -Vj * • SUITABLE FOR BROAD BAND APPLICATIONS S08PACKAGE

Contextual Info: mi TetraFET =&= INI D1211UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 0 W - 12.5V -500MHz SINGLE ENDED J JW FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS S08PACKAGE

Contextual Info: 1111 TetraFET =K= mi SEME D2020UK LAB METAL GATE RF SILICON FET MECHANICAL DATA C GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET B 5W -28V-1GHZ SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN G • SUITABLE FOR BROAD BAND APPLICATIONS S08PACKAGE PIN 1 - SO URCE

E55 coil

Abstract: TK5551-PP rev s8 f rf transmitter circuit diagram Temic Semiconductors temic transponder To avoid code duplication, TEMIC will define 30H-232-DO FDX-B 56-BIT
Contextual Info: TEMIC e5530 S e m i c o n d u c t o r s 128-Bit Read-Only IDIC for RF Identification Description via an internal load. This damping-in-tum can be detected by the interrogator. The identifying data are stored in a 128 bit PROM on the e5530, realized as an array of laserprogrammable fuses. The logic block diagram for the

Contextual Info: TetraFET Mil llll D2019UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA * * GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W - 28V - 1GHz SINGLE ENDED •*- ► ^ , ." f ''t 2 '] c H B XI A 4 T . . V * FEATURES ► - p- • SIMPLIFIED AMPLIFIER DESIGN

Contextual Info: nil Vrrr= TetraFET mi D2231UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7 .5 W - 12.5V - 1 GHz SINGLE ENDED Dimensions in mm. 03R 4 PL / 2 PL \ |/ 5— \ 1 27 / \ 1 27 / \ 1 27 a— / 0 10 R TYP /

Contextual Info: nil Vrr r = mi TetraFET D2220UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5 W - 1 2 . 5 V - 1GHz SINGLE ENDED I D f C A I FEATURES • SIMPLIFIED AMPLIFIER DESIGN G • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: mi TetraFET E^É llll D2220UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W - 12.5V- 1 GHz SINGLE ENDED T C B ▲ FEATURES • SIMPLIFIED AMPLIFIER DESIGN •4 • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: nil TetraFET Vrrr = mi D2019UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W - 28V - 1GHz SINGLE ENDED I D f C A I FEATURES • SIMPLIFIED AMPLIFIER DESIGN G • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: nil Vrrr= TetraFET mi D2230UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5 W - 1 2 . 5 V - 1GHz SINGLE ENDED Dimensions in mm. 03R 4 PL / 2 PL \ |/ 5— \ 1 27 / \ 1 27 / \ 1 27 a— / 0 10 R TYP /

Contextual Info: nil Vrr r = mi TetraFET D2219UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2 .5 W - 1 2 .5 V - 1GHz SINGLE ENDED I D f C A I FEATURES • SIMPLIFIED AMPLIFIER DESIGN G • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: nil Vrr r = mi TetraFET D1211UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 0 W -1 2 .5 V -5 0 0 M H z SINGLE ENDED I D f C A I FEATURES • SIMPLIFIED AMPLIFIER DESIGN G • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: nil TetraFET itfi llll SEME D2219UK LAB METAL GATE RF SILICON FET MECHANICAL DATA C GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2 .5 W - 12.5V - 1 GHz SINGLE ENDED B I JT\ X L. ► * FEATURES • SIMPLIFIED AMPLIFIER DESIGN * • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: nil Vrr r = mi TetraFET D2029UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W - 28V - 1GHz SINGLE ENDED Dimensions in mm. 03R 4 PL / 2 PL \ |/ 5— \ 1 27 / \ 1 27 / \ 1 27 a— / 0 10 R TYP / / -

Contextual Info: nil Vrr r = mi TetraFET D2221UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7 .5 W - 1 2 .5 V - 1GHz SINGLE ENDED I D f C A I FEATURES • SIMPLIFIED AMPLIFIER DESIGN G • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: nil Vrr r = mi TetraFET D2020UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET I D f C A 5W -28V-1G H Z I SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN G • SUITABLE FOR BROAD BAND APPLICATIONS

d1231uk

Contextual Info: nil Vrr r = mi TetraFET SEM E D1231UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 0 W -1 2 .5 V -5 0 0 M H z SINGLE ENDED Dimensions in mm. 03R 4 PL / 2 PL \ |/ 5— \ 1 27 / \ 1 27 / \ 1 27 a— / 0 10 R

D2030UK

Contextual Info: nil Vrr r = mi TetraFET D2030UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET Dimensions in mm. 03R 4 PL 5W -28V-1G H Z / 2 PL \ |/ 5— SINGLE ENDED \ 1 27 / \ 1 27 / \ 1 27 a— / 0 10 R TYP / / - FEATURES

Contextual Info: nil Vrr r = mi TetraFET D2229UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2 .5 W - 12.5V - 1 GHz SINGLE ENDED Dimensions in mm. 03R 4 PL / 2 PL \ |/ 5— \ 1 27 / \ 1 27 / \ 1 27 a— / 0 10 R TYP