RF 1117 Search Results
RF 1117 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 | Rochester Electronics LLC | BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| CLF1G0035-100P | Rochester Electronics LLC | CLF1G0035-100 - 100W Broadband RF power GaN HEMT |
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| 70298-1117LF | Amphenol Communications Solutions | 4 Row Signal Header, 48 Position, Straight, Press-Fit, Wide body | |||
| 68771-117HLF | Amphenol Communications Solutions | BergStik®, Board to Board connector, Unshrouded Vertical Header, Through Hole, Single Row, 17 Positions, 2.54 mm (0.100in) Pitch. | |||
| 77311-170-01LF | Amphenol Communications Solutions | BergStik®, Board to Board connector, Unshrouded vertical Header, Through Hole, Single Row, 01 Positions, 2.54 mm Pitch. |
RF 1117 Price and Stock
Walsin Technology Corporation RFCBA101117KM6BF01RF Cable Assemblies Cable Assembly |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RFCBA101117KM6BF01 |
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Amphenol Corporation CTL-2Crimpers / Crimping Tools CRIMP TOOL HEX SZ .178" .324" .068" |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CTL-2 | Each | 1 |
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RF 1117 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: R P -1117-C THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO RF INDUSTRIES, ANY UNAUTHORIZED USE OF THIS DRAWING IS EXPRESSLY PROHIBITED WITHOUT WRITTEN PERMISSION FROM RF INDUSTRIES. ANY VIOLATION IS PUNISHABLE UNDER U.S. COPYRIGHT LAWS. DESCRIPTION REV - |
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-1117-c | |
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Contextual Info: PARTNa THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO RF INDUSTRIES, ANY UNAUTHORIZED USE OF THIS DRAWING IS EXPRESSLY PROHIBITED WITHOUT WRITTEN PERMISSION FROM RF INDUSTRIES. ANY VIOLATION IS PUNISHABLE UNDER U .S . COPYRIGHT LAWS. R FB -1117-B T-04 DESCRIPTION |
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-1117-b | |
OPT05
Abstract: 1000 watt mosfet power amplifier 1094/BBM2E3KKO 300 watt mosfet amplifier
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opt051000 watt mosfet power amplifier1094/bbm2e3kko300 watt mosfet amplifier | |
1805B
Abstract: bolometer detector 1807a
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1805bieee-4881109h1119h+2 | |
MCL RAY-1
Abstract: MCL RAY-6U
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ray-11mcl ray-1mcl ray-6u | |
lem 718Contextual Info: Frequency M ix e rs Lcvcl 2 3 Surface Mount :J, Plug-In & Coaxial 10 kHz to 2 .5 GHz SURFACE MOUNT ZAY +23 dBm LO, up to +15 dBm RF MODEL NO. FREQUENCY MHz CONVERSION LOSS dB tO/RF Mid-Band m X a M ax. IF Total Range Max. LO-RF ISOLATION, dB LO-IF ISOLATION, dB |
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sym-15vhsay-11lem 718 | |
MSC1002
Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
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28vdcmsc1002avia c cubeic cd 4440 amplifier circuit diagram | |
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Contextual Info: LM3280 LM3280 Adjustable Step-Down DC-DC Converter and 3 LDOs for RF Power Management Literature Number: SNOSAU4A LM3280 Adjustable Step-Down DC-DC Converter and 3 LDOs for RF Power Management General Description Features The LM3280 is a multi-functional Power Management Unit, |
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lm3280 | |
MRF317Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF317 The RF Line 100 W - 3 0 - 2 0 0 MHz NPN SILICO N RF POWER TRANSISTO R C O N TR O LLED Q BROADBAND RF POWER TRANSISTO R . . . d e s ig n e d p r im a r ily f o r w id e b a n d la rg e sig n a l o u t p u t a m p lif ie r |
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mrf317 | |
nf025
Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
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x13769xj2v0cd00950mhz500mhzpc2794+13 | |
81539Contextual Info: Mini-Circuits - Specification for Frequency Mixer - SRA-3500 Frequency Mixers Notes: • +7dBm LO, up to +1 dBm RF • Absolute maximum power, voltage and current ratings: a. RF power, 50mW b. Peak IF current, 40mA print this page • Conversion loss 10 dB maximum at IF = 1000 MHz |
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sra-350081539 | |
RF Double Balanced MixerContextual Info: Ceramic Frequency Mixer WIDE BAND MCA1-12G+ Level 7 LO Power+7 dBm 3800 to 12000 MHz Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 50 mW IF Current 40 mA Pin Connections LO 10 RF 5 IF 3 GROUND Features |
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mca1-12gdz8852002/95/ecrf double balanced mixer | |
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Contextual Info: Ceramic Frequency Mixer WIDE BAND MCA1-12GL+ Level 4 LO Power+4 dBm 3800 to 12000 MHz Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 50 mW IF Current 40 mA Pin Connections LO 10 RF 5 IF 3 GROUND Features |
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mca1-12gldz8852002/95/ec | |
SRA-12
Abstract: rf1025mhz
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sra-1230mhz10dbm1025mhz+1 | |
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SRA-12Contextual Info: Frequency Mixer SRA-12+ Typical Performance Curves Conversion Loss @ IF=30MHz 11.0 LO = +4dBm 10.4 Conversion Loss dB LO = +7dBm 9.8 LO = +10dBm 9.2 8.6 8.0 7.4 6.8 6.2 5.6 5.0 40 296 552 808 1064 1320 1576 1832 2088 2344 2600 RF Frequency (MHz) Conversion Loss vs. IF @ RF=1025MHz |
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sra-1230mhz10dbm1025mhz | |
MCL SRA-1H
Abstract: MCL sra 1 mcl sbl 1 MCL SRA-3H TAK-3H MCL SRA MCL tak-1wH mixer TUF-1H MCL SBL -1X tfm-4h
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sbl-173hsbl-2500hsra-11hsra-17wh+13 | |
tag 8442
Abstract: paladin 172 410 rg213 au COAXIAL CABLE raychem termination kit PRICE filotex rg213 NSR 2051 PL155-47 2576 cable filotex RG58 filotex et
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element-1414x14mmtag 8442paladin 172 410+8 | |
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Contextual Info: CENTRAL TECHNOLOGIES Manufacturer of Passive Components Catalog Page Table of Contents . . . . . . . . . . . . . . . . . . . . .i-v RF Magnetics . . . . . . . . . . . . . . . . . . . . .1-16 Power Magnetics . . . . . . . . . . . . . . . . .17-65 Transformers . . . . . . . . . . . . . . . . . . . . .67-77 |
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CAPACITOR TANTALUM 686D
Abstract: CTLQ1812NF military resistors catalog tv line transformer 22-35L smd zener diode color band LCD inverter 94v 0 TV flyback transformer pinout 9400MHz filter smd inductors 4.7uH 20A
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capacitor tantalum 686dctlq1812nfmilitary resistors catalogtv line transformer+6 | |
HVD142
Abstract: DSA003637
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hvd142ade-208-1117dsa003637 | |
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Contextual Info: Key Parameters VRRM = 4500 IFAVM = 255 IFRMS = 400 IFSM = 5 VF0 = 2.00 rF = 3.8 VDClink = 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 03D4502 PRELIMINARY Doc. No. 5SYA 1117-02 Feb. 99 Features • Patented free-floating technology |
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03d4502ch-5600 | |
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Contextual Info: Key Parameters VRRM = 4500 IFAVM = 255 IFRMS = 400 IFSM = 5.0 VF0 = 2.0 rF = 3.8 VDClink = 2700 Fast Recovery Diode for GCT applications V A A kA V mΩ V 5SDF 03D4502 PRELIMINARY Doc. No. 5SYA 1117-01 July 98 Features • Patented free-floating silicon technology |
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03d4502ch-5600 | |
IGCT
Abstract: 5SDF03D4502
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03d4502ch-5600igct5sdf03d4502 | |
SMD LTYN
Abstract: ic 4440 40w amplifier 12v ltls e3 Weston 2281 thermometer LT3060ITS8 Transistor SR 6863 TO-126 LTC3855EUH-1 LTPG e3 5Dx diode SMD LTABA
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d-59387d-732301-800-4-linearsmd ltyn+9 | |