REVISION3 Search Results

MS8104160

Abstract: DI-22 DO-14 MS81V04160 MSM518222A
Contextual Info: FEDS8104160-03 OKI Semiconductor MS8104160 REVISION3 2000.9.28 262,214-word x 8-Bits x 2 Dual FIFO GENERAL DESCRIPTION The MS8104160 is a single-chip 4Mb FIFO functionally composed of two OKI 2Mb FIFO (First-In First-Out) memories which were designed for 256k x 8-bit high-speed

MS81V04160

Abstract: DI-22 MSM51V8222A MS8104160
Contextual Info: FEDS81V04160-03 OKI Semiconductor MS81V04160 REVISION3 2000.9.28 Dual FIFO 262,214-word x 8-Bits x 2 GENERAL DESCRIPTION The MS81V04160 is a single-chip 4Mb FIFO functionally composed of two OKI 2Mb FIFO (First-In First-Out) memories which were designed for 256k x 8-bit high-speed

1.27mm pitch header box 36 pin 2row

Abstract: elco connector 8263 series FFC 0.8mm NPSF T1 diode catalogue STDH2 ELCO 8016 FPC CONNECTOR 25P hm 8370 40 pin zif connector 1mm FPC LCD
Contextual Info: CONNECTORS GUIDE 独創の精神で さらに高品位、 Innovative spirits achieves more sophisticated ISO9000シリーズは、1987年に国際標準化機構（ＩＳＯ）によって 制定された、品質保証に対する国際規格です。1993年のEC統合とヨー

Contextual Info: Datasheet R1Q4A4436RBG, R1Q4A4418RBG 144-Mbit DDR II SRAM 2-word Burst R10DS0146EJ0101 Rev.1.01 Nov 18, 2013 Description The R1Q4A4436RBG is a 4,194,304-word by 36-bit and the R1Q4A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

Contextual Info: Datasheet R1QLA4436RBG, R1QLA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.0 Cycle Read latency with ODT R10DS0144EJ0100 Rev.1.00 Nov 01, 2013 Description The R1QLA4436RBG is a 4,194,304-word by 36-bit and the R1QLA4418RBG is a 8,388,608-word by 18-bit

mce 2500 microphone

Abstract: PEUL70511-01 C807 009C MD10 MD11 MD14 ML7050LA 0934H C803C
Contextual Info: PEUL70511-01 Preliminary ML70511 Family User’s Manual Bluetooth LSI Issue Date: September 2, 2002 Notation Classification Notation • Numeric value Description xxH xxb Represents a hexadecimal number Represents a binary number • Unit Word, W byte, B nibble, N

Contextual Info: Datasheet R1QEA4436RBG, R1QEA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.5 Cycle Read latency with ODT R10DS0142EJ0100 Rev.1.00 Oct 21, 2013 Description The R1QEA4436RBG is a 4,194,304-word by 36-bit and the R1QEA4418RBG is a 8,388,608-word by 18-bit

Contextual Info: Datasheet R1QHA4436RBG,R1QHA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.0 Cycle Read latency R10DS0145EJ0100 Rev.1.00 Nov 01, 2013 Description The R1QHA4436RBG is a 4,194,304-word by 36-bit and the R1QHA4418RBG is a 8,388,608-word by 18-bit

RENESAS MARKING CQ

Contextual Info: Datasheet R1QAA4436RBG,R1QAA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.5 Cycle Read latency R10DS0137EJ0100 Rev.1.00 Oct 10, 2012 Description The R1QAA4436RBG is a 4,194,304-word by 36-bit and the R1QAA4418RBG is a 8,388,608-word by 18-bit

Contextual Info: Datasheet R1QKA4436RBG,R1QKA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.0 Cycle Read latency with ODT R10DS0138EJ0201 Rev.2.01 Nov 18, 2013 Description The R1QKA4436RBG is a 4,194,304-word by 36-bit and the R1QKA4418RBG is a 8,388,608-word by 18-bit

Contextual Info: Datasheet R1QBA4436RBG,R1QBA4418RBG 144-Mbit DDR II+ SRAM 2-word Burst Architecture 2.5 Cycle Read latency R10DS0143EJ0100 Rev.1.00 Oct 21, 2013 Description The R1QBA4436RBG is a 4,194,304-word by 36-bit and the R1QBA4418RBG is a 8,388,608-word by 18-bit

R1QDA4436RBG

Contextual Info: Datasheet R1QDA4436RBG,R1QDA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.5 Cycle Read latency with ODT R10DS0136EJ0201 Rev.2.01 Nov 18, 2013 Description The R1QDA4436RBG is a 4,194,304-word by 36-bit and the R1QDA4418RBG is a 8,388,608-word by 18-bit

revision3

Abstract: 768KHZ crystal 32768
Contextual Info: WC26SM 32.768 KHz Clock Crystal Spec ¾ Surface Mountable Clock Crystal ¾ 32.768 KHz ¾ Small Compact Size ELECTRICAL SPECIFICATIONS: Frequency Tolerance at +25°C Stability Aging Shunt Capacitance Load Capacitance Motional Capacitance Operating Temperature

2MX1

Contextual Info: cP March 1997 Revision 3.1 DATA SHEET FUJI - * SDC4U V7282 A -(67/84/100/125) T-S 32MByte (4M x 72) CMOS Synchronous DRAM Module - ECC General Description The SDC4UV7282(A)-(67/84/100/125)T-S is a high performance, 32-megabtye synchronous, dynamic RAM module organized

Contextual Info: O K I Semiconductor MSM54V16258B/BSL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM54V16258B/BSL is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM54V16258B/BSL achieves high integration,high-speed operation,and low-power

Contextual Info: Revision 3 Automotive ProASIC3 Flash Family FPGAs Features and Benefits Low Power • 1.5 V Core Voltage • Support for 1.5-V-Only Systems • Low-Impedance Flash Switches Extended Temperature AEC-Q100–Qualified Devices • Grade 2: –40°C to 105°C TA 115°C TJ

M54V16258

Contextual Info: O K I Semiconductor MSM54V16258B/BSL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM54V16258B/BSL is a 262,144-word x 16-bit dynamic RA M fabricated in OKI's CMOS silicon gate technology. The MSM54V16258B/BSL achieves high integration,high-speed operation,and low-power

R1QDA4418RBG-19IB0

Abstract: RENESAS MARKING CQ RENESAS Marking is "cq" RENESAS MARKING AB
Contextual Info: Datasheet R1QDA4436RBG,R1QDA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.5 Cycle Read latency with ODT R10DS0136EJ0100 Rev.1.00 Oct 10, 2012 Description The R1QDA4436RBG is a 4,194,304-word by 36-bit and the R1QDA4418RBG is a 8,388,608-word by 18-bit

Contextual Info: Datasheet R1QGA4436RBG,R1QGA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.0 Cycle Read latency R10DS0139EJ0200 Rev.2.00 Jun 01, 2013 Description The R1QGA4436RBG is a 4,194,304-word by 36-bit and the R1QGA4418RBG is a 8,388,608-word by 18-bit

MSM5412222A-25TS-K

Abstract: MSM518222A MSM5412222A MSM5412222A-25JS MSM5412222A-30TS-K
Contextual Info: OKI Semiconductor MSM5412222A REVISION-3 1999.6.10 262,214-Word x 12-Bit Field Memory DESCRIPTION The OKI MSM5412222A is a high performance 3-Mbit, 256K X 12-bit, Field Memory. It is especially designed for high-speed serial access applications such as HDTVs, conventional

Contextual Info: Datasheet R1QPA4436RBG,R1QPA4418RBG 144-Mbit QDR II+ SRAM 2-word Burst Architecture 2.0 Cycle Read latency with ODT R10DS0147EJ0100 Rev.1.00 Sep 02, 2013 Description The R1QPA4436RBG is a 4,194,304-word by 36-bit and the R1QPA4418RBG is a 8,388,608-word by 18-bit

Contextual Info: Datasheet R1QNA4436RBG,R1QNA4418RBG 144-Mbit QDR II+ SRAM 2-word Burst Architecture 2.0 Cycle Read latency R10DS0148EJ0100 Rev.1.00 Sep 02, 2013 Description The R1QNA4436RBG is a 4,194,304-word by 36-bit and the R1QNA4418RBG is a 8,388,608-word by 18-bit

Contextual Info: Datasheet R1QAA4436RBG,R1QAA4418RBG 144-Mbit QDR II+ SRAM 4-word Burst Architecture 2.5 Cycle Read latency R10DS0137EJ0201 Rev.2.01 Nov 18, 2013 Description The R1QAA4436RBG is a 4,194,304-word by 36-bit and the R1QAA4418RBG is a 8,388,608-word by 18-bit

MS81V04160

Abstract: DI-22 MS8104160 MSM518222A
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.