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Contextual Info: EM47CM1688SBB1 1 Revision1History1 1 Revision10.11 Jun.12012 1 -First1release.1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Jun.120121 1/381 www.eorex.com1 1 EM47CM1688SBB1 1 1Gb1(8Mx8Bank×16)1Double1DATA1RATE131SDRAM1

Contextual Info: EM47DM1688SBB1 1 Revision1History1 1 Revision10.11 Jun.12012 1 -First1release.1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Jun.120121 1/381 www.eorex.com1 1 EM47DM1688SBB1 1 2Gb1(16Mx8Bank×16)1Double1DATA1RATE131SDRAM1

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Abstract: AC1501
Contextual Info: EM47DM1688SBC1 1 Revision1History1 1 Revision10.11 Jan.12013 1 -First1release.1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Jan.120131 1/381 www.eorex.com1 1 EM47DM1688SBC1 1 2Gb1(16Mx8Bank×16)1Double1DATA1RATE131SDRAM1

Contextual Info: November 1996 Revision 1.0 FUJITSU DATA SHEET - EDC4B V724 2/4 -(60/70)(J/T)G-S 32MByte (4M x 72) CMOS EDO DRAM Module -3.3V (ECC), Buffered General Description The EDC4BV724(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module

Contextual Info: llT S U May 1997 Revision 1.0 ^ SDC16U V6484- 67/84/100/125 T-S 128MByte (16M X 64) CMOS Synchronous DRAM Module General Description The SDC 16UV6484-(67/84/100/125)T-S is a high performance, 128-megabtye synchronous, dynam ic RAM module organized as 16M words by 64 b is, in a 168-pin, dual-in-line m em ory module (DIMM) package.

Contextual Info: ICS525-01/02 OSCaR User Configurable Clock Description Features The ICS525-01 and ICS525-02 OSCaR™ are the most flexible way to generate a high quality, high accuracy, high frequency clock output from an inexpensive crystal or clock input. The name OSCaR stands for OSCillator Replacement, as

Contextual Info: FBT COUPLER Dual Window Wideband Coupler - Mini Size Specifications: Parameter Premium operating Wavelength Parameter Insertion Loss Max. operating Wavelength Parameter Uniformity (typical) Insertion Loss (Max.) Returnoperating Loss Wavelength Uniformity (typical)

Contextual Info: <P July 1996 Revision 1.0 FUJI DATA SH EET - “ SDC4UV6482- 67/84/100/125 T-S 32MByte (4M x 64) CMOS Synchronous DRAM Module General Description The SDC4UV6482-(67/84/100/125)T-S is a high performance, 32-megabtye synchronous, dynamic RAM module organized as

Contextual Info: MTT Series – 5 x 3.2 Ceramic SMD VCTCXO ¾ Low Profile SMD Device ¾ Hermetically Sealed ¾ Tight Stability Over Temperature ¾ Low Power Consumption ¾ Excellent Phase Noise ELECTRICAL SPECIFICATIONS: Frequency Frequency Stability vs Temperature, Load and Voltage

Contextual Info: FUJITSU May 1997 Revision 1.0 data sheet SDC8UV6484- 67/84/100/125 T-S 64MByte (8M x 64) CMOS Synchronous DRAM Module General Description The SDC8U V6484-(67/84/100/125)T-S is a hgh performance, 64-megabtye synchronous, dynarrc RAM module organeed as 8M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.