RESISTOR ON CHIP Search Results

Contextual Info: DATA SHEET COMPOUND TRANSISTOR AP1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching PACKAGE DRAWING UNIT: mm FEATURES • Current drive available up to 0.7 A • On-chip bias resistor • Low power consumption during drive

Contextual Info: DATA SHEET COMPOUND TRANSISTOR HQ1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Up to 2A high current drives such as ICs, motors, and solenoids available • On-chip bias resistor

nec ap1l2q

Abstract: PA33
Contextual Info: DATA SHEET COMPOUND TRANSISTOR AP1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching PACKAGE DRAWING UNIT: mm FEATURES • Current drive available up to 0.7 A • On-chip bias resistor • Low power consumption during drive

Contextual Info: DATA SHEET COMPOUND TRANSISTOR AB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Current drive available up to 0.7 A • On-chip bias resistor • Low power consumption during drive

Transistor NEC 30

Contextual Info: DATA SHEET COMPOUND TRANSISTOR CE1N2R on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1N2R is a transistor of on-chip high hFE resistor PACKAGE DRAWING UNIT: mm incorporating dumper diode in collector to emitter and zener diode

Contextual Info: Low Resistance Chip Resistor Array Low Resistance Chip Resistor Array 2512 Type: EXBAL n Features l Low price low resistance current sensing resistor is made by the parallel connection of five low resistance resistors on PWB. l Superior mountability by unique concave terminal

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BN1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BA1F4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with BN1F4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR AN1L4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with AA1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

D1359

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BN1L4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with BA1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1F4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with AN1F4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1L4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with AN1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1L4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with AN1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

BA1A4Z

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BA1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR AN1A3Q on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 1.0 kΩ, R2 = 10 kΩ) • Complementary transistor with AA1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR AN1L3M on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 4.7 kΩ) • Complementary transistor with AA1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1L3N on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 10 kΩ) • Complementary transistor with AN1L3N ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

MA3560

Abstract: BA1L3N
Contextual Info: DATA SHEET COMPOUND TRANSISTOR BN1L3N on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 10 kΩ) • Complementary transistor with BA1L3N ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR CE2F3P on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator drives of OA

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BA1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 1.0 kΩ, R2 = 10 kΩ) • Complementary transistor with BN1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR AN1L3N on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 10 kΩ) • Complementary transistor with AA1L3N ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

d1616

Contextual Info: DATA SHEET COMPOUND TRANSISTOR AN1L3N on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 10 kΩ) • Complementary transistor with AA1L3N ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

MA3560

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BA1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 1.0 kΩ, R2 = 10 kΩ) • Complementary transistor with BN1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BN1A3Q on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 1.0 kΩ, R2 = 10 kΩ) • Complementary transistor with BA1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)