RESISTOR MTTF Search Results

Contextual Info: Integrated Resistor Lamps Reliability Data The following cumulative test results have been obtained from testing performed at HP Optoelectronics Division in accordance with the latest revision of MIL-STD-883. T-1 and T-1 3/4 Lamps, 5 V and 12 V Series. Subminiature Lamps

pwm schematic inverter

Abstract: water pumping machine control schematic TRANSISTOR towers inverter schematic Power INVERTER schematic circuit schematic PWM inverter
Contextual Info: APPLICATION NOTE CRA2512 Industrial Controls Use of the Low Ohmic Resistor CRA2512 in Inverter Drives T he 3 phase inverters are used in variable speed control applications. They can be found in a wide spectrum of automated controls including paper machines, presses, fans in cooling towers,

NT1004

Abstract: Ablestik 84-1LMIT1 120C 155C 84-1LMIT1 DC-10 SNA-100 SNA-176 DB266
Contextual Info: Product Description SNA-100 Stanford Microdevices’ SNA-100 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 12dB of gain when biased at 50mA and 4V. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias

NT 407 F transistor

Abstract: SNA-376 nt 407 f 100C 120C 135C 155C 84-1LMIT1 SNA-300
Contextual Info: Product Description SNA-300 Stanford Microdevices’ SNA-300 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 22dB of gain when biased at 35mA and 4V. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias

Ablestik 84-1LMIT1

Abstract: 120C 155C 84-1LMIT1 SNA-200 SNA-276
Contextual Info: Product Description SNA-200 Stanford Microdevices’ SNA-200 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 16dB of gain when biased at 50mA and 4V. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias

SNA-38

Contextual Info: 15 Stanford Microdevices Product Description SNA-386 Stanford Microdevices’ SNA-386 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surfacemountable plastic package. This amplifier provides 21dB of gain when biased at 35mA and 4V. The use of an external resistor allows for bias flexibility and

Contextual Info: Remote I/O system excom 8 channel digital input/output module DM80EX The input/output module DM80Ex is used for the connection of NAMUR sensors DIN EN 60 947-5-6 and actuators. If mechanical contacts are connected, it is required to implement a resistor circuitry (WM1, Ident no.

Contextual Info: EIC1010-4 10.00-10.70 GHz 4-Watt Internally Matched Power FET UPDATED 02/15/2005 FEATURES • • • • • • • • .650±.008 .512 .004 .129 Id1dB IM3 RTH VDS = 3 V, IDS = 20 mA 3 Thermal Resistance 1 Tested with 100 Ohm gate resistor. 2) S.C.L. = Single Carrier Level.

Contextual Info: Product Description SNA-300 Stanford M icrodevices’ SNA-300 is a GaAs m onolithic broad­ band am plifier MMIC in die form. This am plifier provides 22dB of gain when biased at 35m A and 4V. External DC decoupling capacitors determ ine low frequency response. The use of an external resistor allow s for bias

chn 610

Contextual Info: PRECISION BULK METAL FOIL “ TE CHN OL OG Y “ GLOSSARY a c o m p a n y V I S H A of Y VISHAY RESISTORS ACCURACY: The degree to which the measured value of resistance approximates the specified value of resistance. This is normally expressed in percent deviation but in precision resistor work, the percent is often so small that the results are

Contextual Info: PKF 4910A I DC/DC power modules 3.3V/3A /9.9 W • SMD and through-hole versions with ultra low component height 8.0 mm 0.315 in. • 78% efficiency • 1,500 Vdc isolation voltage • Switching frequency syncronization • MTTF >10 million hours at +50°C case

pkf 4910a

Contextual Info: PKF 4910A I DC/DC power modules 3.3V/3A /9.9 W • SMD and through-hole versions with ultra low component height 8.0 mm 0.315 in. • 78% efficiency • 1,500 Vdc isolation voltage • Switching frequency syncronization • MTTF >10 million hours at +50°C case

Contextual Info: PKF 4610A I DC/DC power modules 3.3 V/2 A /6.6 W • SMD and through-hole versions with ultra low component height 8.0 mm 0.315 in. • 78% efficiency • 1,500 Vdc isolation voltage • Switching frequency syncronization • MTTF >10 million hours at +50°C

Contextual Info: PKF 4111A I DC/DC power modules 5 V/ 2 A /10W • SMD and through-hole versions with ultra low component height 8.0 mm 0.315 in. • 83% efficiency • 1,500 Vdc isolation voltage • Switching frequency syncronization • MTTF >10 million hours at +50°C

Contextual Info: PKF 4111A I DC/DC power modules 5 V/ 2 A /10W • SMD and through-hole versions with ultra low component height 8.0 mm 0.315 in. • 83% efficiency • 1,500 Vdc isolation voltage • Switching frequency syncronization • MTTF >10 million hours at +50°C

FP1189

Abstract: 8893 application diagram
Contextual Info: FP1189 ½ - Watt HFET Product Information Product Features • • • • • • • • Product Description 50 – 4000 MHz ISO & EPC compliant +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz MTTF >100 Years SOT-89 SMT Package

cx 1213 circuit diagram

Contextual Info: AH103 The Communications Edge TM High Gain, High Linearity ½ Watt Amplifier Product Features • • • • • • • Product Description The device conforms to WJ Communications’ long history of producing high reliability and quality components. The AH103 has an associated MTTF of

Contextual Info: FP1189 ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years The FP1189 is a high performance ½-Watt HFET

FP11G

Abstract: fp1189-g rfid reader id-20 FP1189 FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S TRANSISTOR BC 206 PNP
Contextual Info: FP1189 ½-Watt HFET Product Features • • • • • • 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years Functional Diagram The FP1189 is a high performance ½-Watt HFET

FP11G

Abstract: TRANSISTOR BC 158 pnp WJ transistor bc 206 transistor bc 3843
Contextual Info: FP1189 ½-Watt HFET Product Features • • • • • • 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years Functional Diagram The FP1189 is a high performance ½-Watt HFET

MARKING S0 sot89

Abstract: bc 3843 sot-89 marking dn
Contextual Info: FP1189 The Communications Edge TM Product Information ½-Watt HFET Product Features x x x x x x 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package x MTTF >100 Years Functional Diagram

3000 watt power amplifier circuit diagram

Contextual Info: AH103 The Communications Edge TM High Gain, High Linearity ½ Watt Amplifier Product Features • • • • • • • 700 – 2200 MHz +27 dBm P1dB +46 dBm Output IP3 29 dB Gain @ 900 MHz Excellent ACPR MTTF > 100 Years SOIC-8 Pkg w/ heat slug Advanced Product Information

marking 08 sot89

Abstract: SOT89 MARKING CODE 8G
Contextual Info: FP1189 The Communications Edge TM Product Information ½-Watt HFET Product Features x x x x x x 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package x MTTF >100 Years Functional Diagram

WJ 3

Contextual Info: FP1189 The Communications Edge TM ½-Watt HFET Product Information Product Features • • • • • • 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years