RESISTOR 2020 PACKAGE 47 OHM Search Results
RESISTOR 2020 PACKAGE 47 OHM Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TPH1R306PL |
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N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPH9R00CQH |
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MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPH9R00CQ5 |
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N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPHR8504PL |
|
N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet | ||
| XPH2R106NC |
|
N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) | Datasheet |
RESISTOR 2020 PACKAGE 47 OHM Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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PTF191601E
Abstract: BCP56 LM7805 ATC 4r7 capacitor 100b
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PTF191601E PTF191601F PTF191601E PTF191601F 160-watt, PTF191601F* BCP56 LM7805 ATC 4r7 capacitor 100b | |
AN1955
Abstract: ECUV1H150JCV FR408 MMG3005NT1
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MMG3005NT1 MMG3005NT1 AN1955 ECUV1H150JCV FR408 | |
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Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3005NT1 Rev. 0, 11/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3005NT1 Broadband High Linearity Amplifier The MMG3005NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small- signal, high |
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MMG3005NT1 MMG3005NT1 | |
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Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3005NT1 Rev. 2, 5/2006 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3005NT1 Broadband High Linearity Amplifier The MMG3005NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small- signal, high |
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MMG3005NT1 MMG3005NT1 | |
MMG3005NT1
Abstract: CRCW060333R0FKEA 74126 A113 A114 A115 AN1955 C0603C103J5RAC C0603C104J5RAC C101
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MMG3005NT1 MMG3005NT1 CRCW060333R0FKEA 74126 A113 A114 A115 AN1955 C0603C103J5RAC C0603C104J5RAC C101 | |
52887
Abstract: 79122 82812 ECUV1H150JCV FR408 MMG3005NT1 A113 A114 A115 AN1955
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MMG3005NT1 MMG3005NT1 52887 79122 82812 ECUV1H150JCV FR408 A113 A114 A115 AN1955 | |
0057X
Abstract: 52887 90758 A113 A114 A115 AN1955 C0603C103J5RAC C0603C104J5RAC C101
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MMG3005NT1 MMG3005NT1 0057X 52887 90758 A113 A114 A115 AN1955 C0603C103J5RAC C0603C104J5RAC C101 | |
109Z4Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3005NT1 Rev. 8, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3005NT1 Broadband High Linearity Amplifier The MMG3005NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small-signal, high |
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MMG3005NT1 MMG3005NT1 109Z4 | |
45288Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3005NT1 Rev. 8, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3005NT1 Broadband High Linearity Amplifier The MMG3005NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small-signal, high |
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MMG3005NT1 MMG3005NT1 45288 | |
FR408
Abstract: MMG3005NT1 AN1955 C0603C103J5RAC ECUV1H150JCV FR-408 CRCW060333R0FKEA CRCW06030000FK
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MMG3005NT1 MMG3005NT1 FR408 AN1955 C0603C103J5RAC ECUV1H150JCV FR-408 CRCW060333R0FKEA CRCW06030000FK | |
A19045Contextual Info: PTFA190451E PTFA190451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier |
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PTFA190451E PTFA190451F 45-watt, H-30265-2 H-31265-2 A19045 | |
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Contextual Info: PRELIMINARY GOLDMOS Field Effect Transistor 90 Watt, DCS/PCS Band PTF 102098* Description Key Features The PTF 102098 is a 90–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. This LDMOS device operates at 47% efficiency P-1dB and 14.5 dB linear gain. Full gold metallization |
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PCD1287CT P220ECT 1-877-GOLDMOS 1522-PTF | |
irl 3710
Abstract: 87541 ECUV1H150JCV pf 83744 A113 A114 A115 AN1955 C101 FR408
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MMG3004NT1 MMG3004NT1 irl 3710 87541 ECUV1H150JCV pf 83744 A113 A114 A115 AN1955 C101 FR408 | |
irl 3710
Abstract: 840 21210 FR408 ECUV1H 07482
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MMG3004NT1 MMG3004NT1 irl 3710 840 21210 FR408 ECUV1H 07482 | |
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BCP56
Abstract: LM7805 PTFA190451E PTFA190451F RO4350
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PTFA190451E PTFA190451F PTFA190451E PTFA190451F 45-watt, H-36265-2 H-37265-2 BCP56 LM7805 RO4350 | |
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Contextual Info: PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA, |
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PTFA190451E PTFA190451F PTFA190451E PTFA190451F 45-watt, H-36265-2 H-37265-2 | |
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Contextual Info: PTF 102098 LDMOS RF Power Field Effect Transistor 90 Watts, 1805–1880 MHz, 1930–1990 MHz Description The PTF 102098 is a 90–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS or PCS bands. This LDMOS device operates at 47% efficiency P–1dB and 14.5 dB linear gain. Full |
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1522-PTF | |
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Contextual Info: PTF181301E PTF181301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF181301E and PTF181301F are thermally-enhanced, 130-watt, internally matched GOLDMOS FETs intended for GSM and EDGE applications in the DCS/PCS bands. Thermally-enhanced packaging provides |
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PTF181301E PTF181301F 130-watt, PTF181301F* | |
250328
Abstract: 66417 PQFN package power freescale transistors 97218 A113 A114 A115 AN1955 C0603C103J5RAC C0603C104J5RAC
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MMG3004NT1 MMG3004NT1 250328 66417 PQFN package power freescale transistors 97218 A113 A114 A115 AN1955 C0603C103J5RAC C0603C104J5RAC | |
275-232
Abstract: 38494 FR408 66417 A113 A114 A115 AN1955 C0603C103J5RAC 250328
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MMG3004NT1 MMG3004NT1 275-232 38494 FR408 66417 A113 A114 A115 AN1955 C0603C103J5RAC 250328 | |
38494
Abstract: 22851
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MMG3004NT1 MMG3004NT1 38494 22851 | |
66417
Abstract: A113 A114 A115 AN1955 C0603C103J5RAC C0603C104J5RAC C101 ECUV1H150JCV FR408
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MMG3004NT1 MMG3004NT1 66417 A113 A114 A115 AN1955 C0603C103J5RAC C0603C104J5RAC C101 ECUV1H150JCV FR408 | |
FR408
Abstract: 66417 AN1955 C0603C103J5RAC ECUV1H150JCV MMG3004NT1 AN377 275-232 5 vdc 4-0308 2825 qfn
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MMG3004NT1 MMG3004NT1 FR408 66417 AN1955 C0603C103J5RAC ECUV1H150JCV AN377 275-232 5 vdc 4-0308 2825 qfn | |
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Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 8, 10/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small-signal, high |
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MMG3004NT1 MMG3004NT1 | |