RESISTANCE24 Search Results

Contextual Info: HEWLETT—PACKARD/ CHPNTS blE D • H EW LETT PACKARD M4 M7 5 64 0010105 1 3 3 ■ IHPA MSA-0686 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Features 86 Plastic Package • Cascadable 50 Q Gain Block • Low Operating Voltage 3.5 V typical Vd

Contextual Info: Q a v a n te k MSA-0311 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek SOT-143 Package Features • • • • • • • Cascadable 50 £2 Gain Block 3 dB Bandwidth: DC to 2.3 GHz 11.0 dB typical Gain at 1.0 GHz

Contextual Info: AVANTEK 2GE INC 0A V A N TEK lim itit i o o o tsn T D AT-60585 Up to 6 GHz Low Noise ' Silicon Bipolar Transistor A vantek 85 Plastic Package Features • • Low Bias C u rren t O peration Low N o ise Figure: 1.4 dB typ ical at 1.0 G Hz 1.9 dB typ ical at 2.0 G Hz

Contextual Info: a v a n te k IFD-50210 Silicon Bipolar MMIC 3.5 GHz Divide-by-4 Static Prescaler Avantek 100 mil Package Features .040 • • • • • • • 1.02 Wide Operating Frequency Range: 0.05 to 3.5 GHz typical Low Phase Noise: -140 dBc/Hz, 1 KHz offset High Input Sensitivity: -30 dBm at 1 GHz typical

Contextual Info: Oavantek MSA-0886 M O D A M P C ascadable S ilic o n B ip o la r M o n o lith ic M icrow ave Integrated C irc u it A m p lifie rs Avantek 86 Plastic Package Features • • • • • Usable Gain to 5.5 GHz High Gain: 32.5 dB typical at 0.1 GHz 22.5 dB typical at 1.0 GHz

Contextual Info: Oavantek MSA-0386 MOD A M P C ascadable S ilic o n B ip o la r M o n o lith ic M icrow ave Integrated C irc u it A m p lifie rs Avantek 86 Plastic Package Features • Cascadable 50 Cl Gain Block • 3 dB Bandwidth: DC to 2.4 GHz • 12.0 dB typical Gain at 1.0 GHz

Contextual Info: HE WLETT-PACKARD/ m CMPNTS blE D HEW LETT PACKARD • 4447554 DDG'ìflSS 3SS AT-60510 U P to 6 GHz Low Noise Silicon Bipolar Transistor Features 100 mil Package • • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 dB typical at 4.0 GHz

Contextual Info: 44475fll4 0 0 1 0 Ü 4 1 2^3 B H P A H EW LETT PACKARD MSA-0185 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Am plifiers HEWLETT-PACKARD/ CMPNTS blE » Features 85 Plastic Package Cascadable 50 SI Gain Block 3 dB Bandwidth: DC to 1.0 GHz

Contextual Info: HEWLETT-PACKARD/ CMPNTS W hot blE J> m 4447564 OOlQlbb S44 MSA-9970 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers H EW LETT f t "KM P A C K A R D Features • • • • • • 70 mil Package Open Loop Feedback Amplifier

ha 431 transistor

Abstract: chip die npn transistor
Contextual Info: HEWLETT-PACKARD/ CHPNTS blE ]> v v - v H EW LETT PACKARD • 4447504 0 0 0 tifl4tî OST H H P A AT-60200 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Features Chip Outline1 • Low Bias Current Operation • Low Noise Figure: 1.9 dB typical at 2.0 GHz

Contextual Info: HEWLETT-PACKARD/ T fw tHEWLETT mL'HM P A C K A R D CMPNTS blE D • 4 4 4 7 SA 4 D O l O a S T 423 I IHPA M S A -0304 M O D A M P C a s c a d a b le S ilico n B ip o lar M o n o lith ic M icro w av e In teg rated C irc u it A m p lifie rs Features 04A Plastic Package

Contextual Info: HEWLETT-PACKARD/ CMPNTS blE D • 4 M 4 7 SA 4 0 0 0 ti77b 1Tb ■ H P A AT-00570 Up to 4 GHz General Purpose Silicon Bipolar Transistor W kim H E W LE T T PACKARD 70 mil Package Features • 16.0 dBm typical Pi dB at 2.0 GHz • 11.5 dB typical Gi dB at 2.0 GHz

Contextual Info: H E W L E T T —P A C K A R D / C M P N T S HEW LETT PACKARD m LIE D • 4447564 DD1D127 ATM H H P A MSA-0886 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Features 86 Plastic Package • • 0.51 0.020 • •

Contextual Info: H E W L E T T - P A C K A R D / CI1PNTS m blE J> • 444 7 5S 4 O O Q ' P f H flS4 ■ H P A AT-01672 Up to 1 GHz General Purpose Silicon Bipolar Transistor HEW LETT PACKARD Features TO-72 Package • 24.0 dBm typical Pi <mat 1.0 GHz • 5.5 dB typical Gi dB at 1.0 GHz

at-00570

Abstract: transistor A495 AT00570 amplifier TRANSISTOR 12 GHZ a495 transistor
Contextual Info: HEWLETT-PACKARD/ CMPNTS Wkim H E W L E T T ^.tiM P A C K A R D blE ]> • 44M75A4 □00li77b 1Tb ■ HPA AT-00570 Up to 4 GHz G eneral P urp o se S ilic o n B ip o la r T ra n s is to r 70 mil Package Features • • • • • 16.0 dBm typical Pi dB at 2.0 GHz

AVANTEK

Abstract: Avantek amplifier Avantek, Inc. MSA-0770
Contextual Info: a v a n te k MSA-0770 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 70 mil Package Features • • • • • • .040 1.02 Cascadable 50 Q Gain Block Low Operating Voltage 4.0 V typical Vd 3 dB Bandwidth: DC to 2.5 GHz

avantek microwave

Abstract: MSA-0304 Avantek, Inc. Avantek S
Contextual Info: Q A V A N T E K MSA-0304 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 04 Plastic Package Features • • • • • • .488 ±.030 12.39 ± .76 Cascadable 50 £2 Gain Block 3 dB Bandwidth: DC to 1.6 GHz

AVANTEK

Abstract: Avantek amplifier AVANTEK MSA MSA-0600 MSA-0600-GP2 MSA-0600-GP4 MSA-0600-GP6
Contextual Info: O a v a n te k MSA-0600 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek Chip Outline' Features • Cascadable 50 £2 Gain Block • Low Operating Voltage 3.5 V typical Vd • 3 dB Bandwidth: DC to 1.0 GHz • High Gain: 19.5 dB typical at 0.5 GHz

Avantek MSA 0685

Abstract: MSA-0685 avantek mmic s5 or310
Contextual Info: Q A V A N T E K MSA-0685 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers A vantek 85 Plastic Package Features • Cascadable 50 £2 G ain Block • Low O perating V o ltag e 3.5 V typical Vd • • 3 dB Bandw idth: DC to 0.8 GHz

Avantek rf amplifier

Abstract: avantek microwave Avantek MSA-0400-GP2 MSA-0400-GP2 MSA-0400-GP4 MSA-0400-GP6 MSA-0400 AVANTEK Avantek S
Contextual Info: Q a v a n te k MSA-0400 M O D A M P C ascadab le Silico n Bipolar Monolithic Microwave Integrated Circuit Am plifiers Avantek Chip Outline' Features • > • • Cascadable 50 £2 Gain Block 3 dB Bandwidth: DC to 4.0 GHz 16.0 dBm typical Pi dB at 1.0 GHz

Contextual Info: m H EW LE TT MSA-0886 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Am plifiers PACKARD Features 86 Plastic Package • Usable Gain to 5.5 GHz • High Gain: 32.5 dB typical at 0.1 GHz 22.5 dB typical at 1.0 GHz • Low Noise Figure: 3.3 dB typical at 1.0 GHz

Contextual Info: HEW LETT PACKARD MSA-0404 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers 04A Plastic Package Features • Cascadable 50 Q Gain Block .488 ±.030 12.39 ± .76 • 3 dB Bandwidth: DC to 2.5 GHz • 11.5 dBm typical Pi dB at 1.0 GHz

AT-60510

Abstract: S parameters of 5.8 GHz transistor
Contextual Info: W Ap% AT-60510 Up to 6 GHz Low Noise Silicon Bipolar Transistor HEWLETT wL'f!ÆPA CK A R D Features • • • • • 100 mil Package Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 dB typical at 4.0 GHz High Associated Gain: 12.0 dB typical at 2.0 GHz

AT41400

Abstract: ad 156 transistor maximum gain 33 at 2.0 ghz
Contextual Info: m H EW LETT PACKARD AT-f 1400 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Features • • • Chip Outline Low NoiseFigure: 1.6 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High AssociatedGain: 14.5 dB typical at 2.0 GHz 10.5 dB typical at 4.0 GHz