RES PACK 7 Search Results

Contextual Info: Crescent 4 Piece Reversible Ratcheting Combination Wrench Set, Metric Product Details Catalog No. UPC Code Type of Case Catalog Numbers Number of Tools Included Packaging Literature Low Res. Image High Res. Image Stock Item FRRM4 037103184160 Vacuum Pack Tray

EER2A

Abstract: EER1C R0201 EER1A EER3B
Contextual Info: SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER FLAT PACK PIV (Peak Inverse Voltage) MAX AVG Rectified Current (g> Half Wave Res. Load 60Hz MAX FWO P«aK Surge Currant t'-eo Hz SuparimpoMd MAX Reverse Current @P!V Voltage @25>C T A - MAX Forward Voltage

Contextual Info: & FEATU RES • 400-2000 MHz ■ 0.9 dB Insertion Loss ■ 60 dB Isolation ■ TTL Driver ■ Non-Reflective ■ .750 Sq. Flat Pack MODEL NO. DS0551 PIN Diode SPST “ 1” CO NTRO L GND GND SPST - 5V + 5V GND GND .xx = .02 .xxx = .010 ^ -.0 6 2 TYPICAL PERFORMANCE

C107 SCR

Abstract: scr C107 C107 C107D1 coffee vending machine circuit C107B4 C107D2 C107C2 C10701 SCR C107A1
Contextual Info: Silicon Controlled Rectifier Fiat Pack Design Model C107 Dp to 600 Volts 4 Amperes RMS PRODUCT FEA TU R ES o The Type C107 Silicon Controlled Rectifier (SCR) has the following outstanding featu res: o C107 TYPE 4 LOW COST Cl 07 TYPE 2 Designed for a variety of mount-down

100C0912

Abstract: DA0098 DA0998 RF80
Contextual Info: FEA TU RES & • 2 0 - 3 0 0 MHz ■ 40 dB Linear Range Typical ■ ± 2 dB Linearity MODEL NO. DA0098 •if PIN Diode Linear VCA ■ 2 dB Insertion Loss ■ 14 Pin DIP ■ See DA0998 For Flat Pack Version VCA ■ See 100C0912 For Connectorized Version RF

scr C106

Abstract: c106 scr equivalent SCR c106 GE scr C106 GE C106F2 SCR C106Y1 CI06 SCR C106Y1 terminal SCR 406J C106B2
Contextual Info: Silicon Controlled Rectifier Flat Pack Design Model C106 Up to 600 Volts 4 Amperes RMS o PRO D U C T FEATURES The Type C106 Silicon Controlled Rectifier (SCR) has the following outstanding featu res: o Cl 06 TYPE 4 LOW COST Cl 06 TYPE 2 O perates directly fro m low signal

DDGD377

Abstract: EFR1B I-65-I
Contextual Info: SURFACE MOUNT GLASS PASSVIATED SILICON R E C T I F I E R FLAT PACK PIV MAX AVG Rectified Current (g> Half Wave Res. Load SOHz (P 9 8 K Inversa Voltage) TYPE V 'o PK @ ta EFR1A EFR1B EFR1D EFR1G EFR1J EFR1K EFR1M FA S T 50 100 200 400 SOO 300 1000 1.0 13

Contextual Info: SURFACE MOUNT GLASS FLAT PACK PIV (PaaK Inverse Voltage) M AX A V G Rectified Current <§> Half W ave Res. Load 60Hz SILI C O N R E C T I F I E R MAX FWO PaaK MAX Reverse Current @PIV Voltage @2SX: T A Surge Current Hz SuperiiTposed Reverse @25 “C T Recovery Time

dt300

Abstract: rc servo motor torque speed 6MBI100L-060 diode I-35 L ae200a
Contextual Info: 6-Pack IGBT 600 V 100 A FUJI IGBT MODULE L series I O u tlin e D raw ing s • F eatu res • High Speed Switching • Low S aturation Voltage • Voltage Drive ■ A p p lic a tio n s • Inverter for M otor Drive • AC and DC Servo Drive A m plifier

Contextual Info: SU R FA C E MOUNT G LA S S PA SSIV A TED SILJCION R EC TIFIER FLA T PACK PIV (P ea* Invers« Voltagal MAX A V G R e a iflea Current @ Half W a v e Res. Load 60 Hz MAX FWD PeaK Surge Current V -6 0 Hz Superimposed MAX Reverse Current @P!V Voltage @ 2? C T a

tig ac inverter circuit

Abstract: 2V10V CF35
Contextual Info: 6-Pack IGBT 600 V 50 A FUJI MLGiÊïrilâQË IGBT MODULE ( L series O utline D raw ing s • Featu res • High Speed Switching • Low Saturation Voltage • Voltage Drive ■ A p p lic a tio n s • Inverter for M o to r Drive • AC and DC Servo Drive A m p lifie r

6R130G

Abstract: 120 A diode newave power R601 IMRM
Contextual Info: mmm _ _ _ üm e 6-Pack Diode 6R I3OE-060/080 POWER DIODE M ODULE 6%7V • O u tlin e D raw in g s 4-C2 -j i I <A6 5 ■ 1 ! i i & 'ZsM îL . F eatu res — P - irt>i : A ll the term in als and th e m o u n tin g plate are electrically J3 „ isolated. These m od ules can be installed in the same

Contextual Info: 6-Pack IGBT 600 V 15 A FUJI IGBT MODULE L series Outline Drawings • F eatu res • H igh Sp e e d S w itch in g • L o w S a tu ra tio n V o lta g e • V oltage Drive ■ A p p lic a tio n s • In v e rte r fo r M o to r D rive • A C a n d D C S e rv o D rive A m p lifie r

E23O

Abstract: diode VSF 200
Contextual Info: 6-Pack IGBT 600 V 15 A FUJI IGBT MODULE L series Outline Drawings • F eatu res • H igh Sp e e d S w itch in g • L o w S a tu ra tio n V o lta g e • V oltage Drive ■ A p p lic a tio n s • In v e rte r fo r M o to r D rive • A C a n d D C S e rv o D rive A m p lifie r

Contextual Info: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE1 CE2 CE3 CE4 RES R/B WE OE 79C0408 A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 FEATURES DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness:

Contextual Info: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM Vcc CE1 CE2 Vss R/B A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 Vss 79C0408 Vcc CE3 CE4 Vss A15 RES WE A13 A8 A9 A11 OE A10 Vcc I/O7 I/O6 I/O5 I/O4 I/O3 Vss CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8

Contextual Info: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural

79LV0408

Contextual Info: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural

transistor comparison data sheet

Contextual Info: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation

Contextual Info: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural

transistor comparison data sheet

Abstract: Maxwell 79lv0408 all data sheet Maxwell 79LV0408
Contextual Info: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM MCM Vcc CE1 CE2 Vss RDY/BUSY A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 Vss 40 1 79LV0408 20 21 Vcc CE3 CE4 Vss A15 RES WE A13 A8 A9 A11 OE A10 Vcc I/O7 I/O6 I/O5 I/O4 I/O3 Vss CE2 CE1 CE3 CE4 RES

Contextual Info: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation

79LV0408

Abstract: Maxwell 79lv0408
Contextual Info: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural

Contextual Info: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation