R601 Search Results

Contextual Info: Data Sheet 10V Drive Nch MOSFET R6010ANX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

Contextual Info: R6015ANX Nch 600V 15A Power MOSFET Datasheet Outline VDSS RDS on (Max.) 600V 0.3Ω ID 15A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

R6015ANZ

Contextual Info: Data Sheet 10V Drive Nch MOSFET R6015ANZ  Dimensions Unit : mm 5.5 TO-3PF 15.5 0.44 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 3.0 φ3.6 10.0  Structure Silicon N-channel MOSFET

Contextual Info: R6015FNX Data Sheet 10V Drive Nch MOSFET R6015FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 2.5 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed.

R6015ANZ

Contextual Info: R6015ANZ Data Sheet 10V Drive Nch MOSFET R6015ANZ  Dimensions Unit : mm 5.5 TO-3PF 15.5 0.44 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 3.0 φ3.6 10.0  Structure Silicon N-channel MOSFET

R6015ANX

Contextual Info: R6015ANX R6015ANX Datasheet Nch 600V 15A Power MOSFET Outline VDSS RDS on (Max.) 600V 0.3Ω ID 15A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

Contextual Info: 10V Drive Nch MOSFET R6012ANJ Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 4.5 1.24 2.54 0.4 0.78 2.7 5.08 (1) Gate (2) Drain (3) Source 1.2 3.0 1.0 13.1 9.0 7.25 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

Contextual Info: 1.60 4.30 1.60 Locking Spacers 4.30 Ø4.80 3.80 3.80 5.60 for R6013 L Locking Spacers low profile self-lock spacers Rigid self-lock spacers Material: Nylon 6/6 UL94V-2. Spacer design uses minimum board area. Recommended PC board thickness 1.6mm. Recommended hole Size Ø4.0mm.

R6012AN

Contextual Info: R6012ANX Datasheet Nch 600V 12A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.42Ω ID 12A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

Contextual Info: R6015FNJ Nch 600V 15A Power MOSFET Datasheet l Outline VDSS 600V RDS on (Max.) 0.35Ω ID ±15A PD 50W LPT(S) l Inner circuit l Features 1) Fast reverse recovery time (trr).

Contextual Info: Data Sheet 10V Drive Nch MOSFET R6015FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 2.5 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage

Contextual Info: Data Sheet 10V Drive Nch MOSFET R6015ANZ  Dimensions Unit : mm 5.5 TO-3PF 15.5 0.44 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 3.0 φ3.6 10.0  Structure Silicon N-channel MOSFET

R6015ENJ

Contextual Info: R6015ENJ Nch 600V 15A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.290W ID 15A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source

Contextual Info: SONY C X D 1 913 A Q Digital Video Encoder Description The CXD1913AQ is a digital video encoder designed for video CD, car navigation system and other digital video applications. The device accepts ITU-R601 compatible Y, Cb, Cr data and also accepts ITUR656-format Y, Cb, Cr data, and the data are

CPX1204

Abstract: interlace parity ITU-R601 TD10 CXD1913AQ XTEST aspect ratio i.d encoder
Contextual Info: CXD1913AQ Digital Video Encoder Description The CXD1913AQ is a digital video encoder designed for video CD, car navigation system and other digital video applications. The device accepts ITU-R601 compatible Y, Cb, Cr data and also accepts ITUR656-format Y, Cb, Cr data, and the data are

Contextual Info: Data Sheet 10V Drive Nch MOSFET R6015ANZ  Dimensions Unit : mm 5.5 TO-3PF 15.5 0.44 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 3.0 φ3.6 10.0  Structure Silicon N-channel MOSFET

9A050

Abstract: R6018
Contextual Info: R6018ANX R6018ANX Datasheet Nch 600V 18A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.27Ω ID 18A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

R6012ANX

Contextual Info: R6012ANX Transistors 10V Drive Nch MOSFET R6012ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

r6012anx

Contextual Info: R6012ANX R6012ANX Datasheet Nch 600V 12A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.42Ω ID 12A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

Contextual Info: 10V Drive Nch MOSFET R6018ANX Dimensions Unit : mm Structure Silicon N-channel MOSFET TO-220FM φ3.2 10.0 4.5 8.0 0.8 (1) Gate (2) Drain (3) Source Applications Switching Packaging specifications Type 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance.

Contextual Info: R6015ANJ Nch 600V 15A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.3W ID 15A PD 100W LPTS (SC-83) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.

R3-32

Abstract: R601094
Contextual Info: R601/R602/R332/WF1608/WF2012SERIES Description The device is a high frequency, wire-wound ferrite SMD chip inductor designed for choking RF signals in the bias circuit（power supply）and for countermeasure against the unnecessary radiation in electronic systems, such as

CCD216

Abstract: top 261 yn ccd211 CCD114 ITU-R624-3 ccir rec 624-3 CCD220 CCD110 CCD123 CCD212
Contextual Info: TC90A32F Preliminary TOSHIBA CMOS Digital Interated Circuit Silicon Monolithic TC90A32F Digital Video Encoder The TC90A32F converts a digital image’s Y, Cb and Cr signals, which conform to ITU-R601/656 standards, to analog Y and C composite signals for NTSC and PAL systems.

R6015ENZ

Contextual Info: R6015ENZ Nch 600V 15A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.290W ID 15A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.