REPORT P CHANNEL MOSFET Search Results

power BJT PNP

Abstract: BJT pnp 45V vertical mosfet
Contextual Info: SYNC POWER CORP. Technical Review of P-Channel MOSFET Measurement 576 Curve Tracer Testing Report April 2005 Ver.1 MOSFET Products AN001 1 Measuring P-Channel MOSFET Characteristics Table of Contents Page 1. General Information. 3

mosfet 23 Tsop-6

Abstract: IRLML2244TR power MOSFET reliability report TSOP-6 Marking IRLML2244 marking 43A sot23 MOSFET reliability report Cross Reference power MOSFET IRLMS6802TRPBF P-channel HEXFET Power MOSFET
Contextual Info: International Rectifier Product Detail Page Page 1 of 2 Part Se Part: IRLMS6802TRPBF Description: -20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 Micro 6 package Support Docs: Datasheet Spice File Saber File Reliability Report Cross Reference IR Part #

9544 transistor

Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics

TRANSISTOR 9642

Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics

IRF P-Channel FET 100v

Abstract: 68A diode IR 200V P-Channel fets k 68a irf P-Channel MOSFET audio IRFG5210 4.5v to 100v input regulator
Contextual Info: Preliminary Data Sheet No. PD - 9.1664 HEXFET TRANSISTORS IRFG5210 COMBINATION N AND P CHANNEL 2 EACH Ω (N and P channel ) HEXFET 200 Volt, 1.60Ω Product Summary The HEXFET technology is the key to International Rectifier’s Part Number advanced line of power MOSFET transistors. The efficient

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Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
Contextual Info: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left

AAT2402

Contextual Info: PRODUCT DATASHEET AAT2402M/2402S SwitchRegTM 16 Channel White LED Driver Solution with Full LED Current and Timing Control Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT2402M/ 2402S is a highly int egrat ed, high efficiency whit e LED backlight solut ion for large size LCD

Contextual Info: TPD2007F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD2007F Low-Side Power Switch Array 8 Channels for Motors, Solenoids, and Lamp Drivers The TPD2007F is an 8-channel low-side switch array. The IC has a vertical MOSFET output which can be directly driven from

TPD2007F

Contextual Info: TPD2007F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD2007F Low-Side Power Switch Array 8 Channels for Motors, Solenoids, and Lamp Drivers The TPD2007F is an 8-channel low-side switch array. The IC has a vertical MOSFET output which can be directly driven from

HIGH POWER MOSFET TOSHIBA

Abstract: marking code c 9 toshiba TPD2007F
Contextual Info: TPD2007F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD2007F Low-Side Power Switch Array 8 Channels for Motors, Solenoids, and Lamp Drivers The TPD2007F is an 8-channel low-side switch array. The IC has a vertical MOSFET output which can be directly driven from

AN-999

Contextual Info: Application Notes AN-999 International Rectifier’s Total Dose Radiation Hardness Assurance RHA Test Program For many years, IR has been the leader in radiation hardened MOSFETs. The design and processing of these devices has been carefully planned and

2N2222A bjt

Abstract: 74 standard TTL bjt 2n2222a ttl logic gates IRHLUB7970Z4 TTL logic gate Drive Base BJT IRHLUB770Z4 mosfet p channel irf LM139 APPLICATION
Contextual Info: Application Note AN-1067 Design Considerations When Using RadiationHardened Small Signal Logic Level MOSFETs Table of Contents Page Introduction . 1 Acronyms. 1

250V 10A TF 106

Contextual Info: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.600£i TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

Contextual Info: FRM9140D, FRM9140R, FRM9140H 11 A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11 A, -100V, RDS on = 0.300S1 TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

Contextual Info: yw us FRK9260D, FRK9260R, FRK9260H 26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 26A, -200V, RDS on = 0.200Q TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

Contextual Info: FRM9240D, FRM9240R, FRM9240H 7A, -200V, 0.720 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 7A, -200V, RDS on = 0.720Q. TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

Contextual Info: TPD1048F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1048F Low-Side Power Switch for Motor, Solenoid and Lamp Drivers The TPD1048F is a monolithic power IC intended for low-side load switching applications. The output has a vertical MOSFET,

Contextual Info: FRM130D, FRM130R, FRM130H 14A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package TO-204AA • 14A, 100V, RDS on = 0.180£i • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

9437B

Contextual Info: Data Sheet No. PD-9.437B I«R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG5110 COMBINATION N AND P CHANNEL IS EACH POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE) Product Summary 100 Volt, 0.70 Ohm (N-Channel and P-Channel) HEXFETs

Contextual Info: PRODUCT DATASHEET AAT2400/2401 SwitchRegTM 16 Channel White LED Driver Solution with Full LED Current and Timing Control Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT2400/ 2401 is a highly int egrat ed, high efficiency whit e LED backlight solut ion for large size LCD panels

Contextual Info: Data Sheet No. PD-9.437B I« R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG5110 COMBINATION N AND P CHANNEL [8 EACH] POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE 100 Volt, 0.70 Ohm (N-Channel and P-Channel) HEXFETs The HEXFET® technology is the key to International

Contextual Info: tyvvys S FRM240D, FRM240R, FRM240H S e m ico n d ucto r y y 16A, 200V, 0.24 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 16A, 200V, RDS on = 0.24S1 TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts •

Contextual Info: tyvvys S FRM140D, FRM140R, FRM140H S e m ico n d ucto r y y 23A, 100V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 23A, 100V, RDS on = 0.130S1 TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: FRE9160D, FRE9160R, FRE9160H 30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 30A, -100V, RDS on = 0.095S1 TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)