RENESAS VARIABLE CAPACITANCE DIODE MARKING CODE A2 Search Results

pj 82 diode

Abstract: pj 906 diode pj 906 pj 48 diode diode pj 33 Phototransistor bp 101 DIODE PJ 2450 pj 17 diode ha17385 0/pj 906 diode
Contextual Info: HA17431VPJ/PJ/PAJ/FPJ/FPAJ/PNAJ/UPA, HA17432UPA Shunt Regulator REJ03D0892-0100 Rev.1.00 Apr 03, 2007 Description The HA17431 series is temperature-compensated variable shunt regulators. The main application of these products is in voltage regulators that provide a variable output voltage. The on-chip high-precision reference voltage source can

bar code phototransistor

Abstract: HA17431 440v ac voltage regulator JAPANESE TRANSISTOR DATA BOOK 2010 marking code 015g PHOTOCOUPLER SERIES with gnd HA17431VPJ HA17431FPAJ HA17431FPJ HA17431PAJ
Contextual Info: HA17431 Series Shunt Regulator REJ03D0678-0200 Previous: ADE-204-049A Rev.2.00 Jun 15, 2005 Description The HA17431 series is temperature-compensated variable shunt regulators. The main application of these products is in voltage regulators that provide a variable output voltage. The on-chip high-precision reference voltage source can

transistor ha17431p

Contextual Info: Data Sheet HA17431 Series R03DS0086EJ0400 Rev.4.00 Jan 10, 2014 Shunt Regulator Description The HA17431 series is temperature-compensated variable shunt regulators. The main application of these products is in voltage regulators that provide a variable output voltage. The on-chip high-precision reference voltage source can

sc43a

Abstract: transistor ha17431p HA17431P HA17431 HA17431FP HA17431FPA HA17431PA HA17431PNA HA17431VLP HA17431VP
Contextual Info: HA17431 Series Shunt Regulator REJ03D0678-0300 Rev.3.00 Apr 03, 2007 Description The HA17431 series is temperature-compensated variable shunt regulators. The main application of these products is in voltage regulators that provide a variable output voltage. The on-chip high-precision reference voltage source can

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

HA17431

Abstract: HA17431FPAJ HA17431FPJ HA17431PAJ HA17431PJ HA17431PNAJ HA17431VPJ HA17432UPA pj 906 NEC uPA
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

transistor ha17431p

Abstract: HA17431P marking code 015g HA17431 HA17431FP HA17431FPA HA17431PA HA17431PNA HA17431VLP HA17431VP
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: BB501C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0830-0600 Previous ADE-208-701D Rev.6.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise;

BB501C

Contextual Info: BB501C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0830-0600 Previous ADE-208-701D Rev.6.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise;

BB101C

Contextual Info: BB101C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0821-0300 Previous ADE-208-505A Rev.3.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)

Renesas variable capacitance diode marking code A2

Abstract: k1510 BB101M sot143rmod
Contextual Info: BB101M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0822-0300 Previous ADE-208-504A Rev.3.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)

Contextual Info: BB101M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0822-0300 Previous ADE-208-504A Rev.3.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)

BB502C

Abstract: C5 MARKING CODE SOT 247 rfc bb 204
Contextual Info: BB502C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0832-0600 Previous ADE-208-810C Rev.6.00 Apr 27, 2006 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz

BB301M

Contextual Info: BB301M Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0824-0300 Previous ADE-208-506A Rev.3.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz)

BB301C

Abstract: K2068
Contextual Info: BB301C Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0823-0300 Previous ADE-208-507A Rev.3.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz)

Contextual Info: BB301M Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0824-0300 Previous ADE-208-506A Rev.3.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz)

Contextual Info: BB503C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0834-0500 Previous ADE-208-812C Rev.5.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz

BB501M

Abstract: REJ03G0831-0600
Contextual Info: BB501M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0831-0600 Previous ADE-208-700D Rev.6.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise;

Contextual Info: BB501M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0831-0600 Previous ADE-208-700D Rev.6.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise;

ADE-208-811C

Abstract: BB503M
Contextual Info: BB503M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0835-0500 Previous ADE-208-811C Rev.5.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz

BB502M

Abstract: K3024
Contextual Info: BB502M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0833-0500 Previous ADE-208-809C Rev.5.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz

Contextual Info: BB503M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0835-0500 Previous ADE-208-811C Rev.5.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz

BB503C

Contextual Info: BB503C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0834-0500 Previous ADE-208-812C Rev.5.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz