RENESAS IGBT Search Results

RENESAS IGBT Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
GT50J123		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 59 A, TO-3P(N)	Datasheet
GT30J122A		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)	Datasheet
GT30J121		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)	Datasheet
GT20J121		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, TO-220SIS	Datasheet
GT20J341		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS	Datasheet

RENESAS IGBT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
RJP63k2 Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching	Original	R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606	PDF
car Speed Sensor Abstract: 3 phase dc converter afe circuit diagram igbt LQFP1414-120 yokogawa 2655 LEARN ELECTRONIC ECU CAR BLOCK HD64F2639F AIRBAG EMULATION RESISTORS HD64F2378RVFQ R5F61663N50FPV 2314F Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	REJ01B0013-0200 car Speed Sensor 3 phase dc converter afe circuit diagram igbt LQFP1414-120 yokogawa 2655 LEARN ELECTRONIC ECU CAR BLOCK HD64F2639F AIRBAG EMULATION RESISTORS HD64F2378RVFQ R5F61663N50FPV 2314F	PDF
rjp30e2 Contextual Info: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	RJP30E2DPK-M0 R07DS0348EJ0100 PRSS0004ZH-A rjp30e2	PDF
Contextual Info: Preliminary Datasheet RJP65T43DPM R07DS1201EJ0100 Rev.1.00 Apr 23, 2014 650V - 20A - IGBT Application: Power Factor Correction circuit Features • Low collector to emitter saturation voltage VCE sat = 1.8 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C) • Isolated package	Original	RJP65T43DPM R07DS1201EJ0100 20kHz 100kHz) PRSS0003ZA-A	PDF
Contextual Info: Preliminary Datasheet RJH60D3DPE 600V - 17A - IGBT Application: Inverter R07DS0161EJ0500 Rev.5.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)	Original	RJH60D3DPE R07DS0161EJ0500 PRSS0004AE-B	PDF
Contextual Info: Preliminary Datasheet RJH1CD6DPQ-E0 1200V - 25A - IGBT Application: Inverter R07DS0518EJ0500 Rev.5.00 Jun 12, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)	Original	R07DS0518EJ0500 PRSS0003ZE-A O-247)	PDF
Contextual Info: Preliminary Datasheet RJH60D7DPM 600V - 50A - IGBT Application: Inverter R07DS0176EJ0400 Rev.4.00 Dec 07, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)	Original	RJH60D7DPM R07DS0176EJ0400 PRSS0003ZA-A	PDF