REF 0034 Search Results

ti727

Contextual Info: KM44V 16004AS ELECTRONICS CMOS DRAM 16M x 4 Bit CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. ,

Contextual Info: KM44V16104AK CMOS DRAM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. ,

Contextual Info: KM44C4003BS CMOS DRAM ELECTRONICS 4 M x 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time

km44v16004ak

Abstract: UG34
Contextual Info: KM44V 16004AK E LE C T R O N IC S CMOS DRAM 16M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. ,

Contextual Info: KM44C4003BK CMOS D R A M ELECTRONICS 4 M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time

Contextual Info: KM44V16100AK CMOS D R A M ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,

Contextual Info: KM44 V 1 6004 AS CMOS DRAM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. ,

Contextual Info: KM44V16000AS CMOS D R AM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time(-5, -6,

Contextual Info: KM44V16100AS CMOS D R A M ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time(-5, -6,

Contextual Info: K M 4 4 V 16104AS CMOS D R A M ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. ,

Contextual Info: K M 4 4 C 4 1 03 BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time

dc/SMD ad34a

Contextual Info: K M 4 4 V 16004AK CMOS D R A M ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. ,

Contextual Info: KM4 4 V 16 0 0 0 AK C MOS DRAM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time(-5, -6,

Contextual Info: K M 4 4 C 4 10 3 B K CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time

RG-196

Abstract: semirigid SMM5 rg196u
Contextual Info: SMM Microminiature Connectors For Flexible and Semi-rigid Cable Straight Male Cable Plug — .68 7 REF. Cable Type Model Number Dim A RG196/U SMM-1196-55-000-00 0.450 .034 Semi-rigid SMM-0034-79-000-00 0.360 .047 Semi-rigid SMM-0047-79-000-00 0.360 - DIM A — -

OcT 1010

Abstract: atmel 0820 PEAK tray drawing p0046 P-00545 512-3394 P0040
Contextual Info: RECYCLE WITH SEHICYCLE USA 512-339-4229 •322.6 REF — 3 15 .0 -4 INTERLOCKING BLOCKS AT THE BOTTOM 6-NO HOLES VACUUM PICKUP CELL 3.0X45 SEE DETAIL CCHAMFER INDICATES PACKAGE PIN#1 ORIENTATION NOTES : 1. MATERIAL - PP8. 2. ALL DIMENSIONS ARE IN MILLIMETERS.

Contextual Info: Te x a s In s t r u m e n t s LMH0034 SMPTE 292M / 259M Adaptive Cable Equalizer General Description Features The L M H 0034 S M P T E 292M /2 5 9 M ad a ptive cable e q u alize r is a m on o lith ic integrated circuit fo r equalizin g data tra n sm it­ ted o v e r cable or any m edia w ith sim ila r d isp e rsive loss

TLE3103

Contextual Info: 47E D ~ v -*/ ; ‘- • fl235b05 00348^3 1 H S I E G SIEMENS AKTIENSESELLSCHAF 'T - \ *Ò TLE 3101 TLE 3102 TLE 3103 TLE 3104 Features • • • • • • • • Bipolar IC Direct supply from ac line possible Low power consum ption, typically 2.4 mA

TWA0160

Contextual Info: Jl F O - 5 5 1 1 1 -A HONEYWELL PART NUMBER 1SM1-T PLASTIC PLUNGER REV DOCUMENT 11 0034444 C H A N G E D BY KSR 100 C T 0 7 -CHECK RJ PRODUCT CODE TW A 0160 JG -80300 B .1 5 6 ± .0 1 0 D t A - w ! A £ . 0 3 0 MAX PRETRAVEL .3 3 OPERATING POSITION A . 0 8 8 « o o l 0 IA H0LE

. rp 700 pc -24

Abstract: 2-1761603-3
Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST GP 00 LTR DESCRIPTION A1 2.54 [.1 00] 0.55 |\015' D D — DWN JDP SB I 8 MAYO6 REVISED PER EC O -06- 003476

Contextual Info: 4 ?E SIEMENS D m Êd3SbDS SI EMENS 0034435 T «SIE C AKTI ENGESELLSCHAF -r - 'n - C J 5 - o 5 FM-Tuner IC TUA 1574-X6 Preliminary Data Bipolar IC Features • • •. • • Double-balanced mixer AGC generation Strictly symmetrical RF parts Decoupled counter outputs

"if amplifier" siemens

Contextual Info: 47E D • flE3SbOS 0034101 3 ■ SIEMENS SIEG SIEMENS AK TI E N G E S l LLSCHAF T^lA'OerOi AM Amplifier for French Sound IF Standard TDA 2148 Bipolar IC Controlled AM IF amplifier with quasi-synchronous demodulator and integral mean value control for French sound IF applications.

FS40 fet

Contextual Info: ANALOG D E V I C E S INC S1E D ü ô l b ê G G 00345Li0 3ST • ANA Octal 8-Bit CMOS -.si- ?-®? D/A Converter DAC-8800 A N A LO G D E V IC E S FEATURES GENERAL DESCRIPTION * * * * * * * * The DAC-8800 TrimDAC is designed to be a general purpose digitally controlled voltage adjustment device. The output

A001

Abstract: D3512
Contextual Info: 140.0 MHz SAW Filter Part Number 250307B 1. Features Typical 1dB bandwidth of 3.4 MHz Single Ended Operation Dip Package 2. Electrical Specifications Source and Load Impedance = 50Ω Room Temperature : +25℃ ℃ Minimum Typical Maximum MHz - 140.0 - dB -